DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D119 BZD142 ZenBlockTM; zener with integrated blocking diode Preliminary specification 2000 Dec 19 Philips Semiconductors Preliminary specification ZenBlockTM; zener with integrated blocking diode BZD142 FEATURES • Zener and blocking function in one package • Glass passivated • Low leakage current • Excellent stability • Available in ammo-pack. MGU216 DESCRIPTION Cavity free cylindrical glass package through ImplotecTM(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Fig.1 Simplified outline (SOD81) and symbol. (1) Implotec is a trademark of Philips. LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C − 2.1 W − 600 V − 10 mJ Zener Ptot total power dissipation Ttp = 25 °C; lead length 10 mm; see Fig.5 Blocking diode VR continuous reverse voltage ERSM non-repetitive peak reverse avalanche energy 2000 Dec 19 L = 120 mH; Tj = Tj(max) prior to surge; inductive load switched off 2 Philips Semiconductors Preliminary specification ZenBlockTM; zener with integrated blocking diode BZD142 ELECTRICAL CHARACTERISTICS ZENER/TVS Tj = 25 °C unless otherwise specified. WORKING VOLTAGE TEMPERATURE COEFFICIENT VZ (V) at IZ (see Fig.4) SZ (%/K) at Itest MIN. NOM. MAX. MIN. MAX. 68 61 68 75 0.07 0.12 75 68 75 82 0.07 82 74 82 90 91 82 91 100 90 100 110 99 120 130 TYPE NUMBER SUFFIX(1) TEST CURRENT CLAMPING VOLTAGE V(CL)R (V) REVERSE CURRENT at STAND-OFF VOLTAGE IR (µA) MAX. at IRSM (A) (note 2) 10 94.4 106 5 56 0.12 10 103.5 0.97 5 62 0.07 0.12 10 114 0.88 5 68 100 0.07 0.12 5 126 0.79 5 75 110 0.07 0.12 5 139 0.72 5 82 110 121 0.07 0.12 5 152 0.66 5 91 108 120 132 0.07 0.12 5 167 0.60 5 100 117 130 143 0.07 0.12 5 185 0.54 5 110 150 135 150 165 0.07 0.12 5 204 0.49 5 120 160 149 160 171 0.07 0.12 5 224 0.45 5 130 Itest (mA) at VR (V) MAX. Notes 1. To complete the type number the suffix is added to the basic type number, e.g. BZD142-68. 2. Non-repetitive peak reverse current in accordance with “IEC 60060-1, Section 8” (10/1000 µs pulse); see Fig.5. ELECTRICAL CHARACTERISTICS BLOCKING CODE Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA 700 − − V IR reverse current VR = 600 V − − 5 µA VR = 600 V; Tj = 150 °C − − 100 µA f = 1 MHz; VR = 0 V; see Fig.4 − 15 − pF Cd diode capacitance THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 60 K/W Rth j-a thermal resistance from junction to ambient note 1 120 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.2. For more information please refer to the “General Part of associated Handbook”. 2000 Dec 19 3 Philips Semiconductors Preliminary specification ZenBlockTM; zener with integrated blocking diode BZD142 GRAPHICAL DATA MGU214 3 MBL107 102 handbook, halfpage handbook, halfpage Ptot (W) Cd (pF) 2 10 1 0 1 0 100 200 T (°C) 1 10 Solid line: tie-point temperature; lead length = 10 mm. Dotted line: ambient temperature; printed-circuit board mounted as shown in Fig.4. f = 1 MHz; Tj = 25 °C. Fig.2 Fig.3 Maximum total power dissipation as a function of temperature. VR (V) 103 Diode capacitance as a function of reverse voltage; typical values. IRSMhalfpage handbook, 50 handbook, halfpage 102 (%) 25 100 90 7 50 50 2 10 3 t t1 MGA200 t2 MGD521 In accordance with “IEC 60060-1, Section 8”. t1 = 10 µs. t2 = 1000 µs. Dimensions in mm. Fig.5 Fig.4 Device mounted on a printed-circuit board. 2000 Dec 19 4 Non-repetitive peak reverse current pulse definition. Philips Semiconductors Preliminary specification ZenBlockTM; zener with integrated blocking diode BZD142 PACKAGE OUTLINE Hermetically sealed glass package; ImplotecTM(1) technology; axial leaded; 2 leads SOD81 G1 (2) k a b D L G L DIMENSIONS (mm are the original dimensions) UNIT mm b max. 0.81 D max. 2.15 G max. G1 max. 3.8 5 L min. 0 1 2 mm scale 28 Notes 1. Implotec is a trademark of Philips. 2. The marking band indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-06-20 SOD81 2000 Dec 19 EUROPEAN PROJECTION 5 Philips Semiconductors Preliminary specification ZenBlockTM; zener with integrated blocking diode BZD142 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613510/01/pp8 Date of release: 2000 Dec 19 Document order number: 9397 750 07492