1200VAPT50GF120B2_LR(G) APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG* TYPICAL PERFORMANCE CURVES *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT (B2) T-Max® TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop • High Freq. Switching to 20KHz • RBSOA and SCSOA Rated • Ultra Low Leakage Current (L) C • Intergrated Gate Resistor: Low EMI, High Reliability G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT50GF120B2_LR(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current I C2 Continuous Collector Current @ TC = 100°C I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 7 @ TC = 25°C UNIT Volts 135 75 1 Amps 150 150A @ 1200V Switching Safe Operating Area @ TJ = 150°C Watts 781 Total Power Dissipation Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES RG(int) MAX 5.5 6.5 2.5 3.0 Units 1200 (VCE = VGE, I C = 700µA, Tj = 25°C) 4.5 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) TYP 3.1 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Volts 100 2 Gate-Emitter Leakage Current (VGE = ±20V) ±100 5 Intergrated Gate Resistor CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 1000 nA Ω 5-2006 V(BR)CES MIN Rev E Characteristic / Test Conditions 052-6216 Symbol DYNAMIC CHARACTERISTICS Symbol APT50GF120B2_LR(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge MIN TYP Capacitance 3460 VGE = 0V, VCE = 25V 385 f = 1 MHz 225 Gate Charge 9.5 VGE = 15V 340 VCE = 600V MAX UNIT pF V nC 30 I C = 50A 205 7 SSOA td(on) tr td(off) tf Eon1 tf 43 70 RG = 1.0Ω 7 4 3600 TJ = +25°C 5 2640 Turn-on Delay Time Inductive Switching (125°C) 25 VCC = 800V 43 Current Rise Time Turn-off Delay Time VGE = 15V 300 RG = 1.0Ω 7 95 3750 I C = 50A Current Fall Time Turn-on Switching Energy Eon2 Turn-on Switching Energy (With Diode) Eoff Turn-off Switching Energy µJ 4675 6 Eon1 ns 260 I C = 50A Current Fall Time Turn-off Switching Energy td(off) 25 VGE = 15V Eoff A VCC = 800V Turn-off Delay Time Turn-on Switching Energy 150 Inductive Switching (25°C) Current Rise Time Turn-on Switching Energy (With Diode) tr 15V, L = 100µH,VCE = 1200V Turn-on Delay Time Eon2 td(on) TJ = 150°C, R G = 1.0Ω, VGE = Switching Safe Operating Area 44 55 TJ = +125°C ns µJ 6400 6 3400 THERMAL AND MECHANICAL CHARACTERISTICS Symbol MIN TYP MAX Junction to Case (IGBT) .16 RθJC Junction to Case (DIODE) N/A WT 1 Characteristic RθJC Package Weight UNIT °C/W 6.1 gm Repetitive Rating: Pulse width limited by maximum junction temperature. 052-6216 Rev E 5-2006 2 For Combi devices, Ices includes both IGBT and diode leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) Mircosemi Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES = 15V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 TJ = 25°C 100 TJ = -55°C 80 TJ = 125°C 60 40 20 12V 120 11V 100 80 10V 60 9V 40 8V 0 0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) 160 120 100 80 60 TJ = -55°C 40 TJ = 25°C 20 TJ = 125°C 0 FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST<0.5 % DUTY CYCLE 140 IC, COLLECTOR CURRENT (A) 13V 140 20 0 0 15V 160 J 10 VCE = 960V 8 6 4 2 0 50 3 TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE IC = 50A IC = 25A 2 1 0 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 5 IC = 25A 2 1 0 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Threshold Voltage vs. Junction Temperature IC, DC COLLECTOR CURRENT(A) 160 0.90 VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 25 50 75 100 125 150 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 1.10 0.95 IC = 50A 3 180 1.00 IC = 100A 4 1.15 1.05 100 150 200 250 300 350 400 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC = 100A 4 (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 5 VCE = 240V VCE = 600V 12 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 50A C T = 25°C 14 0 140 120 100 80 Lead limited 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 5-2006 GE 140 Rev E V APT50GF120B2_LR(G) 180 052-6216 160 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 30 VGE = 15V 25 20 15 10 VCE = 800V TJ = 25°C or 125°C RG = 1.0Ω L = 100µH 5 0 150 100 VCE = 800V RG = 1.0Ω L = 100µH 50 100 80 60 40 TJ = 125°C, VGE = 15V 80 60 TJ = 25°C, VGE = 15V 40 20 0 110 90 70 50 30 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 7 EOFF, TURN OFF ENERGY LOSS (mJ) = 800V V CE = +15V V GE R = 1.0Ω G 20 TJ = 125°C 15 10 5 TJ = 25°C = 800V V CE = +15V V GE T = 125°C J 25 20 15 10 Eoff,100A Eon2,50A Eoff,50A 5 Eoff,25A Eon2,25A 20 15 10 5 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 G TJ = 125°C 5 4 3 2 TJ = 25°C 1 25 Eon2,100A SWITCHING ENERGY LOSSES (mJ) 30 6 110 90 70 50 30 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 110 90 70 50 30 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 35 = 800V V CE = +15V V GE R = 1.0Ω 0 0 0 RG = 1.0Ω, L = 100µH, VCE = 800V 100 TJ = 25 or 125°C,VGE = 15V tf, FALL TIME (ns) tr, RISE TIME (ns) VGE =15V,TJ=25°C 120 RG = 1.0Ω, L = 100µH, VCE = 800V 25 EON2, TURN ON ENERGY LOSS (mJ) 200 140 110 90 70 50 30 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current SWITCHING ENERGY LOSSES (mJ) VGE =15V,TJ=125°C 110 90 70 50 30 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 0 5-2006 250 0 20 Rev E 300 110 90 70 50 30 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 120 052-6216 APT50GF120B2_LR(G) 350 35 = 800V V CE = +15V V GE R = 1.0Ω Eon2,100A G 20 15 10 Eoff,100A 5 Eon2,50A Eon2,25A Eoff,50A 0 Eoff,25A 125 100 75 50 25 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 TYPICAL PERFORMANCE CURVES IC, COLLECTOR CURRENT (A) Cies P C, CAPACITANCE ( F) APT50GF120B2_LR(G) 160 6,000 1,000 500 Coes 140 120 100 80 60 40 Cres 20 100 0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.18 D = 0.9 0.14 0.12 0.7 0.10 0.5 0.08 Note: 0.06 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.16 0.3 t2 0.04 t SINGLE PULSE 0.1 0.02 0 t1 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.05 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 0.00740 0.252 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 5 T = 100°C C T = 125°C J D = 50 % V = 800V CE R = 1.0Ω G 1 F = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf max fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RθJC 10 20 30 40 50 60 70 80 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 5-2006 0.0941 C Rev E 0.0663 Dissipated Power (Watts) T = 75°C 10 052-6216 TC (°C) ZEXT TJ (°C) FMAX, OPERATING FREQUENCY (kHz) 60 APT50GF120B2_LR(G) APT40DQ120 Gate Voltage 10% TJ = 125°C td(on) tr V CE IC V CC Collector Current 90% 5% 10% Collector Voltage A Switching Energy D.U.T. Figure 22, Turn-on Switching Waveforms and Definitions Figure 21, Inductive Switching Test Circuit 90% Gate Voltage TJ = 125°C td(off) 90% Collector Voltage tf 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions T-MAX® (B2) Package Outline TO-264(L) Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) e1 SAC: Tin, Silver, Copper 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 20.80 (.819) 21.46 (.845) 0.40 (.016) 0.79 (.031) 4.50 (.177) Max. 5-2006 Rev E 052-6216 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 5.79 (.228) 6.20 (.244) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 2.21 (.087) 2.59 (.102) Collector Collector 5.38 (.212) 6.20 (.244) Gate Collector Emitter 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 0.48 (.019) 0.76 (.030) 0.84 (.033) 1.30 (.051) 2.79 (.110) 2.59 (.102) 3.18 (.125) 3.00 (.118) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 2.29 (.090) 2.69 (.106) Gate Collector Emitter