140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF545 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon PNP, high Frequency, high breakdown Transistor • Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz • High Collector Base Breakdown Voltage - BVCBO = 100 V (min) • High FT - 1400 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO Parameter Collector-Emitter Voltage Value 70 Unit Vdc VCBO Collector-Base Voltage 100 Vdc VEBO Emitter-Base Voltage 3.0 Vdc IC Collector Current 400 mA 3.5 20 Watts mW/ ºC -65 to +200 ºC Thermal Data P D Tstg Total Device Dissipation @ TA = 25º C Derate above 25º C Storage Temperature Range Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF545 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO ICES Test Conditions Value Unit Min. Typ. Max. Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) 70 - - Vdc Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) 100 - - Vdc Emitter-Base Breakdown Voltage (IE = 100 µAdc, IC = 0) 3.0 - - Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) - - 20 µA Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) - 1.0 100 µA 15 - - Vdc (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 6.0 Vdc) DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit COB Output Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) - 2.5 - pF CIB Input Capacitance (VEB = 3Vdc, IE=0, f=1 MHz) - 5.4 - pF CCB Junction Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) - 2.8 3.2 pF 1000 1400 - MHz fT Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 25 Vdc, f = 250 MHz) Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF545 FUNCTIONAL Symbol G U max MAG 2 |S21| Value Test Conditions Maximum Unilateral Gain Maximum Available Gain Insertion Gain Unit Min. Typ. Max. IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz - 14 - dB IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz - 14.5 - dB IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz 11.5 12.5 - dB Table 1. Common Emitter S-Parameters, @ VCE = 25 V, IC = 50 mA f S11 S21 S12 S22 100 |S11| 0.139 ∠φ -105 |S21| 7.43 ∠φ 101 |S12| 0.031 ∠φ 83 |S22| 0.573 ∠φ -19 200 0.162 -168 4.35 80 0.066 82 0.508 -23 300 0.522 130 1.7 75 0.113 85 0.493 -29 400 0.260 129 2.23 63 0.154 85 0.487 -43 500 0.275 133 1.74 54 0.188 71 0.445 -53 600 0.262 123 1.49 46 0.226 74 0.495 -69 700 0.333 118 0.951 45 0.925 75 0.456 -71 800 0.327 122 1.3 35 0.379 66 0.424 -85 900 0.517 97 1.21 30 0.402 61 0.393 -109 1000 0.463 115 1.07 27 0.437 63 0.375 -115 (MHz) Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF545 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.