DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMBT3904D NPN switching double transistor Product specification 1999 Dec 15 Philips Semiconductors Product specification NPN switching double transistor PMBT3904D FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 40 V) 1, 4 emitter TR1; TR2 • Reduces number of components and board space. 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 DESCRIPTION APPLICATIONS • Telephony and professional communication equipment. DESCRIPTION handbook, halfpage 6 5 6 4 Two independently operating NPN switching transistors in a SC-74, six lead, SMD plastic package. TR2 1 PMBT3904D 4 TR1 MARKING TYPE NUMBER 5 2 3 1 Top view MARKING CODE 2 3 MAM432 D1 Fig.1 Simplified outline (SC-74) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA Ptot total power dissipation − 300 mW Tstg storage temperature Tamb ≤ 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 600 mW Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 1999 Dec 15 2 Philips Semiconductors Product specification NPN switching double transistor PMBT3904D THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 208 K/W note 1 Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor IE = 0; VCB = 30 V − 50 nA emitter cut-off current IC = 0; VEB = 6 V − 50 nA DC current gain VCE = 1 V; note 1; Fig.3 IC = 0.1 mA 60 − IC = 1 mA 80 − IC = 10 mA 100 300 IC = 50 mA 60 − IC = 100 mA 30 − ICBO collector cut-off current IEBO hFE collector-emitter saturation voltage IC = 10 mA; IB = 1 mA − 200 mV IC = 50 mA; IB = 5 mA − 200 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 1 mA 650 850 mV IC = 50 mA; IB = 5 mA − 950 mV Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − 4 pF Ce emitter capacitance IC = ic = 0; VBE = 500 mV; f = 1 MHz − 8 pF VCEsat fT transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz 300 − MHz F noise figure IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz − 5 dB Switching times (between 10% and 90% levels); (see Fig.2) ICon = 10 mA; IBon = 1 mA; VCC = 3 V; − VBB = −1.9 V − 65 ns 35 ns rise time − 35 ns toff turn-off time − 240 ns ts storage time − 200 ns tf fall time − 50 ns ton turn-on time td delay time tr Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1999 Dec 15 3 Philips Semiconductors Product specification NPN switching double transistor PMBT3904D VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 5 V; T = 600 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω. VBB = −1.9 V; VCC = 3 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 1999 Dec 15 4 oscilloscope Philips Semiconductors Product specification NPN switching double transistor PMBT3904D MCD785 500 MCD788 0.5 handbook, halfpage handbook, halfpage VCEsat hFE (V) 400 0.4 (1) 300 0.3 (2) 200 0.2 (3) (1) 100 0.1 (3) 0 10−1 10 1 102 IC (mA) 0 10−1 103 IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. MCD786 1 102 10 1 VCE = 1 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (2) IC (mA) 103 Collector-emitter saturation voltage as a function of collector current; typical values. MCD787 100 IC handbook, halfpage handbook, halfpage VBE (V) (mA) 80 (1) 0.8 (1) (2) (2) (3) (4) 0.6 60 (5) (6) (3) (7) 40 0.4 (8) (9) 0.2 20 (10) 0 10−1 1 10 102 IC (mA) 0 103 IB = 500 µA. IB = 450 µA. IB = 400 µA. IB = 350 µA. VCE = 1 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. (1) (2) (3) (4) Fig.5 Fig.6 Base-emitter voltage as a function of collector current; typical values. 1999 Dec 15 5 4 2 0 (5) (6) (7) (8) 6 IB = 300 µA. IB = 250 µA. IB = 200 µA. IB = 150 µA. 8 10 VCE (V) (9) IB = 100 µA. (10) IB = 50 µA. Collector current as a function of collector-emitter voltage; typical values. Philips Semiconductors Product specification NPN switching double transistor PMBT3904D PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 1 2 bp e c 3 Lp w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 1999 Dec 15 REFERENCES IEC JEDEC EIAJ SC-74 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN switching double transistor PMBT3904D DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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