MOTOROLA Order this document by MAC228FP/D SEMICONDUCTOR TECHNICAL DATA MAC228FP Series MAC228AFP Series Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. • Four Mode Triggering for Drive Circuits that Source Current • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal resistance and High Heat Dissipation • Center Gate Geometry for Uniform Current Spreading TRIACs 8 AMPERES RMS 200 thru 800 VOLTS MT2 G MT1 CASE 221C-02 STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Off-State Voltage(1) (TJ = –40 to 110°C 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC228-4FP, MAC228A4FP MAC228-6FP, MAC228A6FP MAC228-8FP, MAC228A8FP MAC228-10FP, MAC228A10FP On-State RMS Current (TC = 80°C) Full Cycle Sine Wave 50 to 60 Hz Peak Non-repetitive Surge Current (One Full Cycle 60 Hz, TJ = 110°C) Circuit Fusing (t = 8.3 ms) p 2 µs) Peak Gate Voltage (t p 2 µs) Peak Gate Power (t p 2 µs) Peak Gate Current (t Average Gate Power (TC = 80°C, t p 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Mounting Torque Symbol Value VDRM Unit Volts 200 400 600 800 IT(RMS) 8 Amps ITSM 80 Amps I2t 26 A2s IGM ±2 Amps VGM ±10 Volts PGM 20 Watts PG(AV) 0.5 Watts TJ –40 to 110 °C Tstg –40 to 150 °C 8 in. lb. 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 2.2 °C/W Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.) Characteristic Symbol Peak Blocking Current (VD = Rated VDRM, Gate Open) TJ = 25°C TJ = 110°C IDRM Peak On-State Voltage (ITM = 11 A Peak, Pulse Width VTM p 2 ms, Duty Cycle p 2%) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) MT2(–), G(+) “A” Suffix Only IGT Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) MT2(–), G(+) “A” Suffix Only (VD = Rated VDRM, TC = 110°C, RL = 10 k) MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) MT2(–), G(+) “A” Suffix Only VGT Min Typ Max Unit — — — — 10 2 µA mA — — 1.8 Volts mA — — — — 5 10 Volts — — — — 2 2.5 0.2 0.2 — — — — Holding Current (VD = 12 Vdc, ITM = 200 mA, Gate Open) IH — — 15 mA Gate-Controlled Turn-On Time (VD = Rated VDRM, ITM = 16 A Peak, IG = 30 mA) tgt — 1.5 — µs dv/dt — 25 — V/µs dv/dt(c) — 5 — V/µs Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, TC = 110°C) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 11.3 A, Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C) FIGURE 2 – ON-STATE POWER DISSIPATION FIGURE 1 – RMS CURRENT DERATING 10 α = 30° 104 60° 90° 120° 120° 180° 98 α 92 α 86 α = CONDUCTION ANGLE dc dc α = 180° α 8.0 120° α 6.0 90° α = CONDUCTION ANGLE 60° TJ ≈ 110°C 4.0 30° 2.0 0 80 0 1.0 2.0 3.0 4.0 5.0 6.0 IT(RMS), RMS ON-STATE CURRENT (AMP) 2 P(AV) , AVERAGE POWER (WATTS) TC, CASE TEMPERATURE ( °C) 110 7.0 8.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IT(RMS), RMS ON-STATE CURRENT (AMP) Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– –B– F SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. C S P N E A Q H 1 2 3 STYLE 3: PIN 1. MT 1 2. MT 2 3. GATE –Y– K Z J L G R D 3 PL 0.25 (0.010) M B M Y DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 ––– 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 ––– 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 CASE 221C-02 Motorola Thyristor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MAC228FP/D* MAC228FP/D