CDLL483B CDLL485B CDLL486B • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2mA/°C from 25ºC to 150ºC 1.0mA/°C from 150ºC to 175ºC Forward Current: 650mA ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified VRM VRWM IO IO TA = +150°C V(pk) V(pk) mA mA I FSM TP=1/120 S TA=25ºC A 80 180 250 70 180 225 200 200 200 50 50 50 2 2 2 TYPE CDLL483B CDLL485B CDLL486B DIM D F G G1 S MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.70 0.063 0.067 0.41 0.55 0.016 0.022 3.30 3.70 .130 .146 2.54 REF. .100 REF. 0.03 MIN. .001 MIN. FIGURE 1 DESIGN DATA TYPE VF @100mA IR1 at VRWM TA=25ºC IR2 at VRM TA=25ºC IR3 at VRWM TA = 150ºC V dc CDLL483B CDLL485B CDLL486B 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 nA dc µA µA dc 25 25 25 100 100 100 5 5 5 CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80, LL34) LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 100 °C/W maximum THERMAL IMPEDANCE: (ZOJX): 35 °C/W maximum POLARITY: Cathode end is banded. MOUNTING POSITION: Any. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/°C. The COE of the Mounting Surface System Should Be Selected To Provide A Suitable Match With This Device. 6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (781) 689-0803 WEBSITE: http://www.microsemi.com 89 CDLL483B, CDLL485B CDLL486B and 1000 0ºC 10 1 -65ºC 25º C 100 ºC 15 IF - Forward Current - (mA) 100 0.1 .3 .4 .5 .6 .7 .8 .9 1.0 VF - Forward Voltage (V) 1.1 1.2 1.3 FIGURE 2 Typical Forward Current vs Forward Voltage 1000 IR - Reverse Current - (µA) 100 10 1 150ºC 0.1 C 100º 25ºC .01 -65ºC NOTE : .001 20 40 60 80 100 120 140 Percent of Reverse Working Voltage (%) 90 FIGURE 3 Typical Reverse Current vs Reverse Voltage All temperatures shown on graphs are junction temperatures