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CDLL483B
CDLL485B
CDLL486B
• GENERAL PURPOSE SILICON DIODES
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 200 mA
Derating: 1.2mA/°C from 25ºC to 150ºC
1.0mA/°C from 150ºC to 175ºC
Forward Current: 650mA
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
VRM
VRWM
IO
IO
TA = +150°C
V(pk)
V(pk)
mA
mA
I FSM
TP=1/120 S
TA=25ºC
A
80
180
250
70
180
225
200
200
200
50
50
50
2
2
2
TYPE
CDLL483B
CDLL485B
CDLL486B
DIM
D
F
G
G1
S
MILLIMETERS
INCHES
MIN MAX MIN MAX
1.60
1.70 0.063 0.067
0.41
0.55 0.016 0.022
3.30
3.70 .130 .146
2.54 REF.
.100 REF.
0.03 MIN.
.001 MIN.
FIGURE 1
DESIGN DATA
TYPE
VF
@100mA
IR1 at VRWM
TA=25ºC
IR2 at VRM
TA=25ºC
IR3 at VRWM
TA = 150ºC
V dc
CDLL483B
CDLL485B
CDLL486B
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
nA dc
µA
µA dc
25
25
25
100
100
100
5
5
5
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
100 °C/W maximum
THERMAL IMPEDANCE: (ZOJX): 35
°C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (781) 689-0803
WEBSITE: http://www.microsemi.com
89
CDLL483B, CDLL485B
CDLL486B
and
1000
0ºC
10
1
-65ºC
25º
C
100
ºC
15
IF - Forward Current - (mA)
100
0.1
.3
.4
.5
.6
.7
.8
.9
1.0
VF - Forward Voltage (V)
1.1
1.2
1.3
FIGURE 2
Typical Forward Current
vs Forward Voltage
1000
IR - Reverse Current - (µA)
100
10
1
150ºC
0.1
C
100º
25ºC
.01
-65ºC
NOTE :
.001
20 40 60 80 100 120 140
Percent of Reverse Working Voltage (%)
90
FIGURE 3
Typical Reverse Current
vs Reverse Voltage
All temperatures shown on graphs are
junction temperatures