ATMEL AT25160A-10TU-2.7

Features
• Serial Peripheral Interface (SPI) Compatible
• Supports SPI Modes 0 (0,0) and 3 (1,1)
– Datasheet Describes Mode 0 Operation
• Low-voltage and Standard-voltage Operation
•
•
•
•
•
•
•
•
•
– 2.7 (VCC = 2.7V to 5.5V)
– 1.8 (VCC = 1.8V to 5.5V)
20 MHz Clock Rate (5V)
32-byte Page Mode
Block Write Protection
– Protect 1/4, 1/2, or Entire Array
Write Protect (WP) Pin and Write Disable Instructions for Both Hardware and Software
Data Protection
Self-timed Write Cycle (5 ms max)
High Reliability
– Endurance: One Million Write Cycles
– Data Retention: 100 Years
Automotive Devices Available
8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini-MAP (MLP 2x3), and 8lead TSSOP Packages
Die Sales: Wafer Form, Waffle Pack, and Bumped Wafers
SPI Serial
EEPROMs
8K (1024 x 8)
16K (2048 x 8)
32K (4096 x 8)
64K (8192 x 8)
Description
The AT25080A/160A/320A/640A provides 8192/16384/32768/65536 bits of serial
electrically-erasable programmable read-only memory (EEPROM) organized as
1024/2048/4096/8192 words of 8 bits each. The device is optimized for use in many
industrial and commercial applications where low-power and low-voltage operation
are essential. The AT25080A/160A/320A/640A is available in space-saving 8-lead
PDIP, 8-lead JEDEC SOIC, 8-lead MAP, 8-lead Ultra Thin Mini-MAP (MLP 2x3) and 8lead TSSOP packages.
The AT25080A/160A/320A/640A is enabled through the Chip Select pin (CS) and
accessed via a three-wire interface consisting of Serial Data Input (SI), Serial Data
Output (SO), and Serial Clock (SCK). All programming cycles are completely selftimed, and no separate erase cycle is required before write.
Pin Name
Function
CS
Chip Select
SCK
Serial Data Clock
SI
Serial Data Input
SO
Serial Data Output
GND
Ground
VCC
Power Supply
WP
Write Protect
HOLD
Suspends Serial Input
NC
No Connect
DC
Don’t Connect
8-lead SOIC
8-lead PDIP
Table 1. Pin Configuration
CS
SO
WP
GND
1
2
3
4
8
7
6
5
VCC
HOLD
SCK
SI
1
2
3
4
8
7
6
5
CS
SO
WP
GND
1
2
3
4
8
7
6
5
VCC
HOLD
SCK
SI
8-lead Ultra Thin Mini-MAP (MLP 2x3)
8-lead TSSOP
CS
SO
WP
GND
AT25080A
AT25160A
AT25320A
AT25640A
VCC
HOLD
SCK
SI
VCC
HOLD
SCK
SI
8
7
6
5
1
2
3
4
CS
SO
WP
GND
Bottom View
8-lead MAP
VCC
HOLD
SCK
SI
8
7
6
5
1
2
3
4
CS
SO
WP
GND
3347K–SEEPR–2/07
Bottom View
1
Block write protection is enabled by programming the status register with one of four blocks of
write protection. Separate program enable and program disable instructions are provided for
additional data protection. Hardware data protection is provided via the WP pin to protect
against inadvertent write attempts to the status register. The HOLD pin may be used to suspend any serial communication without resetting the serial sequence.
Absolute Maximum Ratings*
Operating Temperature.................................–55° C to +125° C
Storage Temperature ....................................–65° C to +150° C
Voltage on Any Pin
with Respect to Ground .................................... –1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
DC Output Current........................................................ 5.0 mA
Figure 1. Block Diagram
2
AT25080A/160A/320A/640A
3347K–SEEPR–2/07
AT25080A/160A/320A/640A
Table 2. Pin Capacitance(1)
Applicable over recommended operating range from TA = 25° C, f = 1.0 MHz, VCC = +5.0V (unless otherwise noted)
Symbol
Test Conditions
Max
Units
Conditions
COUT
Output Capacitance (SO)
8
pF
VOUT = 0V
CIN
Input Capacitance (CS, SCK, SI, WP, HOLD)
6
pF
VIN = 0V
Note:
1. This parameter is characterized and is not 100% tested.
Table 3. DC Characteristics
Applicable over recommended operating range from: TAI = –40° C to +85° C, VCC = +1.8V to +5.5V (unless otherwise noted)
Symbol
Parameter
VCC1
Supply Voltage
VCC2
Max
Units
1.8
5.5
V
Supply Voltage
2.7
5.5
V
VCC3
Supply Voltage
4.5
5.5
V
ICC1
Supply Current
VCC = 5.0V at 20 MHz, SO = Open, Read
7.5
10.0
mA
ICC2
Supply Current
VCC = 5.0V at 20 MHz, SO = Open, Read,
Write
4.0
10.0
mA
ICC3
Supply Current
VCC = 5.0V at 5 MHz, SO = Open,
Read, Write
4.0
6.0
mA
ISB1
Standby Current
VCC = 1.8V, CS = VCC
< 0.1
6.0(2)
µA
(2)
µA
ISB2
Standby Current
Test Condition
Min
VCC = 2.7V, CS = VCC
0.3
ISB3
Standby Current
VCC = 5.0V, CS = VCC
IIL
Input Leakage
VIN = 0V to VCC
IOL
Output Leakage
VIN = 0V to VCC, TAC = 0°C to 70°C
VIL(1)
VIH
(1)
(2)
µA
–3.0
3.0
µA
–3.0
3.0
µA
Input Low-voltage
–0.6
VCC x 0.3
V
Input High-voltage
VCC x 0.7
VCC + 0.5
V
0.4
V
Output Low-voltage
VOH1
Output High-voltage
VOL2
Output Low-voltage
VOH2
Output High-voltage
4.5V ≤VCC ≤5.5V
1.8V ≤VCC ≤3.6V
2.0
7.0
10.0
VOL1
Notes:
Typ
IOL = 3.0 mA
IOH = −1.6 mA
VCC - 0.8
IOL = 0.15 mA
IOH = −100 µA
V
0.2
VCC - 0.2
V
V
1. VIL min and VIH max are reference only and are not tested.
2. Worst case measured at 85° C
3
3347K–SEEPR–2/07
Table 4. AC Characteristics
Applicable over recommended operating range from TAI = –40° C to +85° C, VCC = As Specified,
CL = 1 TTL Gate and 30 pF (unless otherwise noted)
Symbol
Parameter
Voltage
Min
Max
Units
fSCK
SCK Clock Frequency
4.5–5.5
2.7–5.5
1.8–5.5
0
0
0
20
10
5
MHz
tRI
Input Rise Time
4.5–5.5
2.7–5.5
1.8–5.5
2
2
2
µs
tFI
Input Fall Time
4.5–5.5
2.7–5.5
1.8–5.5
2
2
2
µs
tWH
SCK High Time
4.5–5.5
2.7–5.5
1.8–5.5
20
40
80
ns
tWL
SCK Low Time
4.5–5.5
2.7–5.5
1.8–5.5
20
40
80
ns
tCS
CS High Time
4.5–5.5
2.7–5.5
1.8–5.5
25
50
100
ns
tCSS
CS Setup Time
4.5–5.5
2.7–5.5
1.8–5.5
25
50
100
ns
tCSH
CS Hold Time
4.5–5.5
2.7–5.5
1.8–5.5
25
50
100
ns
tSU
Data In Setup Time
4.5–5.5
2.7–5.5
1.8–5.5
5
10
20
ns
tH
Data In Hold Time
4.5–5.5
2.7–5.5
1.8–5.5
5
10
20
ns
tHD
HOLD Setup Time
4.5–5.5
2.7–5.5
1.8–5.5
5
10
20
tCD
HOLD Hold Time
4.5–5.5
2.7–5.5
1.8–5.5
5
10
20
tV
Output Valid
4.5–5.5
2.7–5.5
1.8–5.5
0
0
0
tHO
Output Hold Time
4.5–5.5
2.7–5.5
1.8–5.5
0
0
0
4
ns
20
40
80
ns
ns
AT25080A/160A/320A/640A
3347K–SEEPR–2/07
AT25080A/160A/320A/640A
Table 4. AC Characteristics (Continued)
Applicable over recommended operating range from TAI = –40° C to +85° C, VCC = As Specified,
CL = 1 TTL Gate and 30 pF (unless otherwise noted)
Symbol
Parameter
Voltage
Min
Max
Units
tLZ
HOLD to Output Low Z
4.5–5.5
2.7–5.5
1.8–5.5
0
0
0
25
50
100
ns
tHZ
HOLD to Output High Z
4.5–5.5
2.7–5.5
1.8–5.5
40
80
200
ns
tDIS
Output Disable Time
4.5–5.5
2.7–5.5
1.8–5.5
40
80
200
ns
tWC
Write Cycle Time
4.5–5.5
2.7–5.5
1.8–5.5
5
5
5
ms
Endurance(1)
Note:
5.0V, 25°C, Page Mode
1M
Write Cycles
1. This parameter is characterized and is not 100% tested.
5
3347K–SEEPR–2/07
Serial Interface
Description
MASTER: The device that generates the serial clock.
S L AV E : B e c a u s e t h e S e r i a l C l o c k p i n ( S C K ) i s a l w a y s a n i n p u t , t h e
AT25080A/160A/320A/640A always operates as a slave.
TRANSMITTER/RECEIVER: The AT25080A/160A/320A/640A has separate pins designated
for data transmission (SO) and reception (SI).
MSB: The Most Significant Bit (MSB) is the first bit transmitted and received.
SERIAL OP-CODE: After the device is selected with CS going low, the first byte will be
received. This byte contains the op-code that defines the operations to be performed.
INVALID OP-CODE: If an invalid op-code is received, no data will be shifted into the
AT25080A/160A/320A/640A, and the serial output pin (SO) will remain in a high impedance
state until the falling edge of CS is detected again. This will reinitialize the serial
communication.
CHIP SELECT: The AT25080A/160A/320A/640A is selected when the CS pin is low. When
the device is not selected, data will not be accepted via the SI pin, and the serial output pin
(SO) will remain in a high impedance state.
HOLD: The HOLD pin is used in conjunction with the CS pin to select the
AT25080A/160A/320A/640A. When the device is selected and a serial sequence is underway,
HOLD can be used to pause the serial communication with the master device without resetting
the serial sequence. To pause, the HOLD pin must be brought low while the SCK pin is low.
To resume serial communication, the HOLD pin is brought high while the SCK pin is low (SCK
may still toggle during HOLD). Inputs to the SI pin will be ignored while the SO pin is in the
high impedance state.
WRITE PROTECT: The write protect pin (WP) will allow normal read/write operations when
held high. When the WP pin is brought low and WPEN bit is “1”, all write operations to the status register are inhibited. WP going low while CS is still low will interrupt a write to the status
register. If the internal write cycle has already been initiated, WP going low will have no effect
on any write operation to the status register. The WP pin function is blocked when the WPEN
bit in the status register is “0”. This will allow the user to install the
AT25080A/160A/320A/640A in a system with the WP pin tied to ground and still be able to
write to the status register. All WP pin functions are enabled when the WPEN bit is set to “1”.
6
AT25080A/160A/320A/640A
3347K–SEEPR–2/07
AT25080A/160A/320A/640A
Figure 2. SPI Serial Interface
AT25080A/160A/320A/640A
7
3347K–SEEPR–2/07
Functional
Description
The AT25080A/160A/320A/640A is designed to interface directly with the synchronous serial
peripheral interface (SPI) of the 6805 and 68HC11 series of microcontrollers.
The AT25080A/160A/320A/640A utilizes an 8-bit instruction register. The list of instructions
and their operation codes are contained in Table 5. All instructions, addresses, and data are
transferred with the MSB first and start with a high-to-low CS transition.
Table 5. Instruction Set for the AT25080A/160A/320A/640A
Instruction Name
Instruction Format
Operation
WREN
0000 X110
Set Write Enable Latch
WRDI
0000 X100
Reset Write Enable Latch
RDSR
0000 X101
Read Status Register
WRSR
0000 X001
Write Status Register
READ
0000 X011
Read Data from Memory Array
WRITE
0000 X010
Write Data to Memory Array
WRITE ENABLE (WREN): The device will power up in the write disable state when VCC is
applied. All programming instructions must therefore be preceded by a Write Enable
instruction.
WRITE DISABLE (WRDI): To protect the device against inadvertent writes, the Write Disable
instruction disables all programming modes. The WRDI instruction is independent of the status of the WP pin.
READ STATUS REGISTER (RDSR): The Read Status Register instruction provides access to
the status register. The READY/BUSY and Write Enable status of the device can be determined by the RDSR instruction. Similarly, the Block Write Protection Bits indicate the extent of
protection employed. These bits are set by using the WRSR instruction.
Table 6. Status Register Format
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
WPEN
X
X
X
BP1
BP0
WEN
RDY
Table 7. Read Status Register Bit Definition
Bit
Definition
Bit 0 (RDY)
Bit 0 = “0” (RDY) indicates the device is READY. Bit 0 = “1” indicates the write cycle
is in progress.
Bit 1 (WEN)
Bit 1= “0” indicates the device is not WRITE ENABLED. Bit 1 = “1” indicates the
device is write enabled.
Bit 2 (BP0)
See Table 8 on page 9.
Bit 3 (BP1)
See Table 8 on page 9.
Bits 4–6 are “0”s when device is not in an internal write cycle.
Bit 7 (WPEN)
See Table 9 on page 9.
Bits 0–7 are “1”s during an internal write cycle.
8
AT25080A/160A/320A/640A
3347K–SEEPR–2/07
AT25080A/160A/320A/640A
WRITE STATUS REGISTER (WRSR): The WRSR instruction allows the user to select one of
four levels of protection. The AT25080A/160A/320A/640A is divided into four array segments.
One-quarter, one-half, or all of the memory segments can be protected. Any of the data within
any selected segment will therefore be read only. The block write protection levels and corresponding status register control bits are shown in Table 8.
The three bits BP0, BP1, and WPEN are nonvolatile cells that have the same properties and
functions as the regular memory cells (e.g., WREN, tWC, RDSR).
Table 8. Block Write Protect Bits
Status
Register Bits
Level
Array Addresses Protected
BP1
BP0
AT25080A
AT25160A
AT25320A
AT25640A
0
0
0
None
None
None
None
1(1/4)
0
1
0300
−03FF
0600
−07FF
0C00
−0FFF
1800
−1FFF
2(1/2)
1
0
0200
−03FF
0400
−07FF
0800
−0FFF
1000
−1FFF
3(All)
1
1
0000
−03FF
0000
−07FF
0000
−0FFF
0000
−1FFF
The WRSR instruction also allows the user to enable or disable the write protect (WP) pin
through the use of the Write Protect Enable (WPEN) bit. Hardware write protection is enabled
when the WP pin is low and the WPEN bit is “1”. Hardware write protection is disabled when
either the WP pin is high or the WPEN bit is “0”. When the device is hardware write protected,
writes to the status register, including the block protect bits and the WPEN bit, and the blockprotected sections in the memory array are disabled. Writes are only allowed to sections of the
memory that are not block-protected.
NOTE: When the WPEN bit is hardware write protected, it cannot be changed back to “0” as
long as the WP pin is held low.
Table 9. WPEN Operation
WPEN
WP
WEN
Protected
Blocks
Unprotected
Blocks
Status
Register
0
X
0
Protected
Protected
Protected
0
X
1
Protected
Writeable
Writeable
1
Low
0
Protected
Protected
Protected
1
Low
1
Protected
Writeable
Protected
X
High
0
Protected
Protected
Protected
X
High
1
Protected
Writeable
Writeable
9
3347K–SEEPR–2/07
READ SEQUENCE (READ): Reading the AT25080A/160A/320A/640A via the Serial Output
(SO) pin requires the following sequence. After the CS line is pulled low to select a device, the
read op-code is transmitted via the SI line followed by the byte address to be read (A15–A0,
see Table 10). Upon completion, any data on the SI line will be ignored. The data (D7–D0) at
the specified address is then shifted out onto the SO line. If only one byte is to be read, the CS
line should be driven high after the data comes out. The read sequence can be continued
since the byte address is automatically incremented and data will continue to be shifted out.
When the highest address is reached, the address counter will roll over to the lowest address
allowing the entire memory to be read in one continuous read cycle.
WRITE SEQUENCE (WRITE): In order to program the AT25080A/160A/320A/640A, two separate instructions must be executed. First, the device must be write enabled via the WREN
instruction. Then a write (WRITE) instruction may be executed. Also, the address of the memory location(s) to be programmed must be outside the protected address field location
selected by the block write protection level. During an internal write cycle, all commands will
be ignored except the RDSR instruction.
A write instruction requires the following sequence. After the CS line is pulled low to select the
device, the WRITE op-code is transmitted via the SI line followed by the byte address (A15–
A0) and the data (D7–D0) to be programmed (see Table 10). Programming will start after the
CS pin is brought high. The low-to-high transition of the CS pin must occur during the SCK
low-time immediately after clocking in the D0 (LSB) data bit.
The READY/BUSY status of the device can be determined by initiating a read status register
(RDSR) instruction. If Bit 0 = “1”, the write cycle is still in progress. If Bit 0 = “0”, the write cycle
has ended. Only the RDSR instruction is enabled during the write programming cycle.
The AT25080A/160A/320A/640A is capable of a 32-byte page write operation. After each byte
of data is received, the five low-order address bits are internally incremented by one; the highorder bits of the address will remain constant. If more than 32 bytes of data are transmitted,
the address counter will roll over and the previously written data will be overwritten. The
AT25080A/160A/320A/640A is automatically returned to the write disable state at the completion of a write cycle.
NOTE: If the device is not write-enabled (WREN), the device will ignore the write instruction
and will return to the standby state, when CS is brought high. A new CS falling edge is
required to reinitiate the serial communication.
Table 10. Address Key
10
Address
AT25080A
AT25160A
AT25320A
AT25640A
AN
A 9– A 0
A 10– A 0
A 11– A 0
A 12– A 0
Don’t Care Bits
A 15– A 10
A 15– A 11
A 15– A 12
A 15– A 13
AT25080A/160A/320A/640A
3347K–SEEPR–2/07
AT25080A/160A/320A/640A
Timing Diagrams
Figure 3. Synchronous Data Timing (for Mode 0)
t CS
VIH
CS
VIL
t CSH
t CSS
VIH
t WH
SCK
t WL
VIL
tH
t SU
VIH
SI
VALID IN
VIL
tV
VOH
SO
HI-Z
t HO
t DIS
HI-Z
VOL
Figure 4. WREN Timing
Figure 5. WRDI Timing
11
3347K–SEEPR–2/07
Figure 6. RDSR Timing
CS
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
INSTRUCTION
SI
SO
DATA OUT
HIGH IMPEDANCE
7
6
5
4
3
2
1
0
11
12
13
14
15
DATA IN
4
3
2
1
0
MSB
Figure 7. WRSR Timing
CS
0
1
2
3
4
5
6
7
8
9
10
7
6
5
SCK
INSTRUCTION
SI
SO
HIGH IMPEDANCE
Figure 8. READ Timing
CS
0 1 2 3 4 5 6 7 8 9 10 11 20 21 22 23 24 25 26 27 28 29 30 31
SCK
SI
SO
12
INSTRUCTION
BYTE ADDRESS
15 14 13 ... 3 2 1 0
HIGH IMPEDANCE
DATA OUT
7 6 5 4 3 2 1 0
MSB
AT25080A/160A/320A/640A
3347K–SEEPR–2/07
AT25080A/160A/320A/640A
Figure 9. WRITE Timing
CS
0 1 2 3 4 5 6 7 8 9 10 11 20 21 22 23 24 25 26 27 28 29 30 31
SCK
INSTRUCTION
SI
SO
BYTE ADDRESS
DATA IN
...
15 14 13
3 2 1 0 7 6 5 4 3 2 1 0
HIGH IMPEDANCE
Figure 10. HOLD Timing
CS
tCD
tCD
SCK
t HD
t HD
HOLD
t HZ
SO
t LZ
13
3347K–SEEPR–2/07
AT25080A Ordering Information(1)
Ordering Code
Package
Operation Range
8P3
8P3
8S1
8S1
8A2
8A2
8Y1
8Y6
Lead-free/Halogen-free/
Industrial Temperature
(−40 to 85° C)
Die Sale
Industrial Temperature
(−40 to 85° C)
(2)
AT25080A-10PU-2.7
AT25080A-10PU-1.8(2)
AT25080AN-10SU-2.7(2)
AT25080AN-10SU-1.8(2)
AT25080A-10TU-2.7(2)
AT25080A-10TU-1.8(2)
AT25080AY1-10YU-1.8(2) (Not recommended for new design)
AT25080AY6-10YH-1.8(3)
AT25080A-W1.8-11(4)
Notes:
1.
2.
3.
4.
For 2.7V devices used in the 4.5 to 5.5V range, please refer to performance values in the AC and DC Characteristics tables.
“U” designates Green package + RoHS compliant.
“H” designates Green package + RoHS compliant, with NiPdAu Lead Finish.
Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please
contact Serial EEPROM Marketing.
Package Type
8P3
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8A2
8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
8Y1
8-lead, 4.90 mm x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP)
8Y6
8-lead, 2.00 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP
2x3mm)
Options
−2.7
Low Voltage (2.7 to 5.5V)
−1.8
Low Voltage (1.8 to 5.5V)
14
AT25080A/160A/320A/640A
3347K–SEEPR–2/07
AT25080A/160A/320A/640A
AT25160A Ordering Information(1)
Ordering Code
Package
Operation Range
8P3
8P3
8S1
8S1
8A2
8A2
8Y1
8Y6
Lead-free/Halogen-free/
Industrial Temperature
(−40 to 85° C)
Die Sale
Industrial Temperature
(−40 to 85° C)
(2)
AT25160A-10PU-2.7
AT25160A-10PU-1.8(2)
AT25160AN-10SU-2.7(2)
AT25160AN-10SU-1.8(2)
AT25160A-10TU-2.7(2)
AT25160A-10TU-1.8(2)
AT25160AY1-10YU-1.8(2) (Not recommended for new design)
AT25160AY6-10YH-1.8(3)
AT25160A-W1.8-11(4)
Notes:
1.
2.
3.
4.
For 2.7V devices used in the 4.5 to 5.5V range, please refer to performance values in the AC and DC Characteristics tables.
“U” designates Green package + RoHS compliant.
“H” designates Green package + RoHS compliant, with NiPdAu Lead Finish.
Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please
contact Serial EEPROM Marketing.
Package Type
8P3
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8A2
8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
8Y1
8-lead, 4.90 mm x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP)
8Y6
8-lead, 2.00 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP
2x3mm)
Options
−2.7
Low Voltage (2.7 to 5.5V)
−1.8
Low Voltage (1.8 to 5.5V)
15
3347K–SEEPR–2/07
AT25320A Ordering Information(1)
Ordering Code
Package
Operation Range
8P3
8P3
8S1
8S1
8A2
8A2
8Y1
8Y6
Lead-free/Halogen-free/
Industrial Temperature
(−40 to 85° C)
Die Sale
Industrial Temperature
(−40 to 85° C)
(2)
AT25320A-10PU-2.7
AT25320A-10PU-1.8(2)
AT25320AN-10SU-2.7(2)
AT25320AN-10SU-1.8(2)
AT25320A-10TU-2.7(2)
AT25320A-10TU-1.8(2)
AT25320AY1-10YU-1.8(2) (Not recommended for new design)
AT25320AY6-10YH-1.8(3)
AT25320A-W1.8-11(4)
Notes:
1.
2.
3.
4.
For 2.7V devices used in the 4.5 to 5.5V range, please refer to performance values in the AC and DC Characteristics tables.
“U” designates Green package + RoHS compliant.
“H” designates Green package + RoHS compliant, with NiPdAu Lead Finish.
Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please
contact Serial EEPROM Marketing.
Package Type
8P3
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8A2
8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
8Y1
8-lead, 4.90 mm x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP)
8Y6
8-lead, 2.00 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP
2x3mm)
Options
−2.7
Low Voltage (2.7 to 5.5V)
−1.8
Low Voltage (1.8 to 5.5V)
16
AT25080A/160A/320A/640A
3347K–SEEPR–2/07
AT25080A/160A/320A/640A
AT25640A Ordering Information(1)
Ordering Code
Package
Operation Range
8P3
8P3
8S1
8S1
8A2
8A2
8Y1
Lead-free/Halogen-free/
Industrial Temperature
(−40 to 85° C)
Die Sale
Industrial Temperature
(−40 to 85° C)
(2)
AT25640A-10PU-2.7
AT25640A-10PU-1.8(2)
AT25640AN-10SU-2.7(2)
AT25640AN-10SU-1.8(2)
AT25640A-10TU-2.7(2)
AT25640A-10TU-1.8(2)
AT25640AY1-10YU-1.8(2)
AT25640A-W1.8-11(3)
Notes:
1. For 2.7V devices used in the 4.5 to 5.5V range, please refer to performance values in the AC and DC Characteristics tables.
2. “U” designates Green package + RoHS compliant.
3. Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please
contact Serial EEPROM Marketing.
Package Type
8P3
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8A2
8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
8Y1
8-lead, 4.90 mm x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP)
Options
−2.7
Low Voltage (2.7 to 5.5V)
−1.8
Low Voltage (1.8 to 5.5V)
17
3347K–SEEPR–2/07
Packaging Information
8P3 – PDIP
E
1
E1
N
Top View
c
eA
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
D
e
D1
A2 A
b2
L
b3
b
4 PLCS
Side View
SYMBOL
NOM
MAX
NOTE
2
A
–
–
0.210
A2
0.115
0.130
0.195
b
0.014
0.018
0.022
5
b2
0.045
0.060
0.070
6
b3
0.030
0.039
0.045
6
c
0.008
0.010
0.014
D
0.355
0.365
0.400
3
D1
0.005
–
–
3
E
0.300
0.310
0.325
4
E1
0.240
0.250
0.280
3
e
0.100 BSC
eA
0.300 BSC
L
Notes:
MIN
0.115
0.130
4
0.150
2
1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA, for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
01/09/02
R
18
2325 Orchard Parkway
San Jose, CA 95131
TITLE
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
DRAWING NO.
REV.
8P3
B
AT25080A/160A/320A/640A
3347K–SEEPR–2/07
AT25080A/160A/320A/640A
8S1 – JEDEC SOIC
C
1
E
E1
L
N
∅
Top View
End View
e
B
COMMON DIMENSIONS
(Unit of Measure = mm)
A
SYMBOL
A1
D
Side View
MIN
NOM
MAX
A
1.35
–
1.75
A1
0.10
–
0.25
b
0.31
–
0.51
C
0.17
–
0.25
D
4.80
–
5.00
E1
3.81
–
3.99
E
5.79
–
6.20
e
NOTE
1.27 BSC
L
0.40
–
1.27
∅
0˚
–
8˚
Note: These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
10/7/03
R
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
TITLE
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC)
DRAWING NO.
8S1
REV.
B
19
3347K–SEEPR–2/07
8A2 – TSSOP
3
2 1
Pin 1 indicator
this corner
E1
E
L1
N
L
Top View
End View
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
D
A
b
MIN
2.90
E
e
A2
D
3.00
3.10
2, 5
3, 5
4.30
4.40
4.50
A
–
–
1.20
A2
0.80
1.00
1.05
b
0.19
–
0.30
L
4
0.65 BSC
0.45
0.60
0.75
1.00 REF
1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
5/30/02
R
20
NOTE
E1
L1
Notes:
MAX
6.40 BSC
e
Side View
NOM
2325 Orchard Parkway
San Jose, CA 95131
TITLE
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
DRAWING NO.
8A2
REV.
B
AT25080A/160A/320A/640A
3347K–SEEPR–2/07
AT25080A/160A/320A/640A
8Y1 – MAP
PIN 1 INDEX AREA
A
1
3
2
4
PIN 1 INDEX AREA
E1
D1
D
L
8
Bottom View
COMMON DIMENSIONS
(Unit of Measure = mm)
A
Side View
5
e
End View
Top View
6
b
A1
E
7
SYMBOL
MIN
NOM
MAX
A
–
–
0.90
A1
0.00
–
0.05
D
4.70
4.90
5.10
E
2.80
3.00
3.20
D1
0.85
1.00
1.15
E1
0.85
1.00
1.15
b
0.25
0.30
0.35
e
L
NOTE
0.65 TYP
0.50
0.60
0.70
2/28/03
R
2325 Orchard Parkway
San Jose, CA 95131
TITLE
8Y1, 8-lead (4.90 x 3.00 mm Body) MSOP Array Package
(MAP) Y1
DRAWING NO.
REV.
8Y1
C
21
3347K–SEEPR–2/07
8Y6 – Mini MAP
D2
A
b
(8X)
E
E2
Pin 1
Index
Area
Pin 1 ID
L (8X)
D
A2
e (6X)
A1
1.50 REF.
A3
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
MIN
D
2.00 BSC
E
3.00 BSC
MAX
D2
1.40
1.50
1.60
E2
-
-
1.40
A
-
-
0.60
A1
0.0
0.02
0.05
A2
-
-
0.55
A3
L
b
NOTE
0.20 REF
0.20
e
Notes:
NOM
0.30
0.40
0.50 BSC
0.20
0.25
0.30
2
1. This drawing is for general information only. Refer to JEDEC Drawing MO-229, for proper dimensions,
tolerances, datums, etc.
2. Dimension b applies to metallized terminal and is measured between 0.15 mm and 0.30 mm from the terminal tip. If the
terminal has the optional radius on the other end of the terminal, the dimension should not be measured in that radius area.
8/26/05
R
22
2325 Orchard Parkway
San Jose, CA 95131
DRAWING NO.
TITLE
8Y6, 8-lead 2.0 x 3.0 mm Body, 0.50 mm Pitch, Utlra Thin Mini-Map,
8Y6
Dual No Lead Package (DFN) ,(MLP 2x3)
REV.
C
AT25080A/160A/320A/640A
3347K–SEEPR–2/07
AT25080A/160A/320A/640A
Revision History
Doc. Rev.
Date
Comments
3347K
2/2007
Implemented revision history.
Added ‘Ultra Thin’ description to 8-lead Mini Map package.
23
3347K–SEEPR–2/07
Atmel Corporation
2325 Orchard Parkway
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Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
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3347K–SEEPR–2/07