1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 (R) Available on commercial versions High Reliability Silicon Power Rectifier Qualified per MIL-PRF-19500/297 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This series of silicon power rectifier part numbers are qualified up to the JANTXV level for high reliability applications. They are constructed with glass passivated die and feature glass to metal seal construction. They have a 500 amp surge rating and provide a V RWM up to 1000 volts. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • DO-5 (DO-203AB) Package High continuous current rating. Very low forward voltage. Low thermal resistance. JAN, JANTX and JANTXV qualifications are available per MIL-PRF-19500/297. RoHS compliant devices available (commercial grade only). APPLICATIONS / BENEFITS • • High frequency switching circuits. Mechanically rugged DO-5 package. MAXIMUM RATINGS @ T A = +25 ºC unless otherwise stated Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-Case Working Peak Reverse Voltage 1N1184(R) 1N1186(R) 1N1188(R) 1N1190(R) 1N3766(R) 1N3768(R) o (1) Maximum Average DC Output Current @ TC = 150 C Non-Repetitive Sinusoidal Surge Current @ 1/120 s, TC = 150 ºC Symbol TJ and TSTG R ӨJC V RWM IO I FSM Value -65 to +175 0.8 100 200 400 600 800 1000 35 500 NOTE: 1. Derate linearly 1.4 A ºC between T C = 150 ºC to T C = 175 ºC. Unit o C o C/W V A A MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0138, Rev. 2 (121993) ©2013 Microsemi Corporation Page 1 of 6 1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 (R) MECHANICAL and PACKAGING • • • • • • CASE: Hermetically sealed metal and glass case body. TERMINALS: Hot solder dip (Sn63/Pb37) on standard commercial, JAN, JANTX, and JANTXV levels. RoHS compliant matte-tin on nickel is available on commercial grade only. MARKING: Polarity symbol and part number. POLARITY: Standard polarity devices are cathode to stud. Reverse polarity devices are anode to stud. WEIGHT: Approximately 14 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N1184 R e3 Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Polarity R = Anode to Stud Blank = Cathode to Stud JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol IF I FSM IO IR VF V RWM Forward Current: The forward current dc value, no alternating component. Maximum Forward Surge Current: The forward current, surge peak or rated forward surge current. Average Rectified Output Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV. T4-LDS-0138, Rev. 2 (121993) ©2013 Microsemi Corporation Page 2 of 6 1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 (R) ELECTRICAL CHARACTERISTICS Parameters / Test Conditions Forward Voltage (1) I F = 110 A, T C = 25 °C Forward Voltage (2) I F = 500 A, T C = 150 °C Reverse Current V RWM = 100 V, T J = 25 °C V RWM = 200 V, T J = 25 °C V RWM = 400 V, T J = 25 °C V RWM = 600 V, T J = 25 °C V RWM = 800 V, T J = 25 °C V RWM = 1000 V, T J = 25 °C Reverse Current V RWM = 100 V, T J = 150 °C V RWM = 200 V, T J = 150 °C V RWM = 400 V, T J = 150 °C V RWM = 600 V, T J = 150 °C V RWM = 800 V, T Jj = 150 °C V RWM = 1000 V, T J = 150 °C Symbol Min. Max. Unit VF 1.4 V VF 2.3 V 1N1184(R) 1N1186(R) 1N1188(R) 1N1190(R) 1N3766(R) 1N3768(R) IR 10 µA 1N1184(R) 1N1186(R) 1N1188(R) 1N1190(R) 1N3766(R) 1N3768(R) IR 1 mA NOTES: 1. tp < 8.3 ms, duty cycle ≤ 2 percent pulse. 2. VF1 shall be performed with either tp = 800 μs or tp = 8.3 ms. T4-LDS-0138, Rev. 2 (121993) ©2013 Microsemi Corporation Page 3 of 6 1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 (R) Instantaneous Forward Current - Amperes GRAPHS Typical Reverse Current - mA Instantaneous Forward Voltage - Volts FIGURE 1 Typical Forward Characteristics Reverse Voltage - Volts FIGURE 2 Typical Reverse Characteristics T4-LDS-0138, Rev. 2 (121993) ©2013 Microsemi Corporation Page 4 of 6 1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 (R) Average Forward Current – Amperes GRAPHS (continued) Maximum Allowable Case Temperature -°C Junction to Case Thernal Impedance - °C/Watts FIGURE 3 Forward Current Derating Time in Seconds FIGURE 4 Transient Thermal Impedance T4-LDS-0138, Rev. 2 (121993) ©2013 Microsemi Corporation Page 5 of 6 1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 (R) PACKAGE DIMENSIONS Ltr OAH Dimensions Millimeters Max Min Max 1.000 25.40 Inch Min - CH - 0.450 - 11.43 HT 0.115 0.200 2.93 5.08 SL 0.422 0.453 10.72 11.50 HT1 0.060 - 1.53 - B 0.250 0.375 6.35 9.52 CD - 0.667 - 16.94 HF 0.667 0.687 16.95 17.44 J 0.156 - 3.97 - φT C 0.140 0.175 3.56 4.44 - 0.080 - 2.03 M 0.030 - 0.77 - NOTES: 1. 2. 3. 4. 5. 6. 7. 8. 9. Dimensions are in inches. Millimeters are given for general information only. Units must not be damaged by torque of 30 inch-pounds applied to 0.250-28 UNF-28 nut assembled on thread. Diameter of unthreaded portion 0.249 inch (6.32 mm) max and .220 inch (5.59 mm) min. Complete threads to extend to within 2.5 threads of seating plane. Angular orientation of this terminal is undefined. Max pitch diameter of plated threads shall be basic pitch diameter 0.2268 inch (5.76 mm) reference FED-STD-H28. A chamfer or undercut on one or both ends of the hex portion is optional; minimum base diameter at seating plane. 0.600 inch (15.24 mm). In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0138, Rev. 2 (121993) ©2013 Microsemi Corporation Page 6 of 6