FM25L04B 4-Kbit (512 × 8) Serial (SPI) Automotive F-RAM 4-Kbit (512 × 8) Serial (SPI) Automotive F-RAM Features Functional Description ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 13 ❐ High-endurance 10 trillion (10 ) read/writes ❐ 121-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process The FM25L04B is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. ■ Very fast serial peripheral interface (SPI) ❐ Up to 10 MHz frequency ❐ Direct hardware replacement for serial flash and EEPROM ❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1) ■ Sophisticated write protection scheme ❐ Hardware protection using the Write Protect (WP) pin ❐ Software protection using Write Disable instruction ❐ Software block protection for 1/4, 1/2, or entire array Unlike serial flash and EEPROM, the FM25L04B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM25L04B is capable of supporting 1013 read/write cycles, or 10 million times more write cycles than EEPROM. ■ Low power consumption ❐ 200 A active current at 1 MHz ❐ 6 A (typ) standby current at +85 C ■ Low-voltage operation: VDD = 3.0 V to 3.6 V ■ Automotive-E temperature: –40 C to +125 C ■ 8-pin small outline integrated circuit (SOIC) package ■ AEC Q100 Grade 1 compliant ■ Restriction of hazardous substances (RoHS) compliant These capabilities make the FM25L04B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss. The FM25L04B provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. The FM25L04B uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. The device specifications are guaranteed over an automotive-e temperature range of –40 C to +125 C. For a complete list of related resources, click here. Logic Block Diagram WP Instruction Decoder Clock Generator Control Logic Write Protect CS HOLD SCK 512 x 8 F-RAM Array Instruction Register Address Register Counter 9 8 SI Data I/O Register SO 2 Nonvolatile Status Register Cypress Semiconductor Corporation Document Number: 001-86152 Rev. *D • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised August 14, 2015 FM25L04B Contents Pinout ................................................................................ 3 Pin Definitions .................................................................. 3 Functional Overview ........................................................ 4 Memory Architecture ........................................................ 4 Serial Peripheral Interface – SPI Bus .............................. 4 SPI Overview ............................................................... 4 SPI Modes ................................................................... 5 Power Up to First Access ............................................ 6 Command Structure .................................................... 6 WREN - Set Write Enable Latch ................................. 6 WRDI - Reset Write Enable Latch ............................... 6 Status Register and Write Protection ............................. 6 RDSR - Read Status Register ..................................... 7 WRSR - Write Status Register .................................... 7 Memory Operation ............................................................ 8 Write Operation ........................................................... 8 Read Operation ........................................................... 8 HOLD Pin Operation ................................................... 9 Endurance ................................................................. 10 Maximum Ratings ........................................................... 11 Operating Range ............................................................. 11 DC Electrical Characteristics ........................................ 11 Document Number: 001-86152 Rev. *D Data Retention and Endurance ..................................... 12 Example of an F-RAM Life Time in an AEC-Q100 Automotive Application ..................... 12 Capacitance .................................................................... 12 Thermal Resistance ........................................................ 12 AC Test Conditions ........................................................ 12 AC Switching Characteristics ....................................... 13 Power Cycle Timing ....................................................... 15 Ordering Information ...................................................... 16 Ordering Code Definitions ......................................... 16 Package Diagrams .......................................................... 17 Acronyms ........................................................................ 18 Document Conventions ................................................. 18 Units of Measure ....................................................... 18 Document History Page ................................................. 19 Sales, Solutions, and Legal Information ...................... 20 Worldwide Sales and Design Support ....................... 20 Products .................................................................... 20 PSoC® Solutions ...................................................... 20 Cypress Developer Community ................................. 20 Technical Support ..................................................... 20 Page 2 of 20 FM25L04B Pinout Figure 1. 8-pin SOIC pinout CS 1 SO 2 WP 3 VSS 4 Top View not to scale 8 VDD 7 HOLD 6 SCK 5 SI Pin Definitions Pin Name I/O Type Description CS Input Chip Select. This active LOW input activates the device. When HIGH, the device enters low-power standby mode, ignores other inputs, and tristates the output. When LOW, the device internally activates the SCK signal. A falling edge on CS must occur before every opcode. SCK Input Serial Clock. All I/O activity is synchronized to the serial clock. Inputs are latched on the rising edge and outputs occur on the falling edge. Because the device is synchronous, the clock frequency may be any value between 0 and 10 MHz and may be interrupted at any time. SI[1] Input Serial Input. All data is input to the device on this pin. The pin is sampled on the rising edge of SCK and is ignored at other times. It should always be driven to a valid logic level to meet IDD specifications. SO[1] Output Serial Output. This is the data output pin. It is driven during a read and remains tristated at all other times including when HOLD is LOW. Data transitions are driven on the falling edge of the serial clock. WP Input Write Protect. This active LOW pin prevents all write operation, including Status Register. If HIGH, write access is determined by the other write protection features, as controlled through the Status Register. A complete explanation of write protection is provided in Status Register and Write Protection on page 7. This pin must be tied to VDD if not used. HOLD Input HOLD Pin. The HOLD pin is used when the host CPU must interrupt a memory operation for another task. When HOLD is LOW, the current operation is suspended. The device ignores any transition on SCK or CS. All transitions on HOLD must occur while SCK is LOW. This pin must be tied to VDD if not used. VSS Power supply Ground for the device. Must be connected to the ground of the system. VDD Power supply Power supply input to the device. Note 1. SI may be connected to SO for a single pin data interface. Document Number: 001-86152 Rev. *D Page 3 of 20 FM25L04B Functional Overview The FM25L04B is a serial F-RAM memory. The memory array is logically organized as 512 × 8 bits and is accessed using an industry standard serial peripheral interface (SPI) bus. The functional operation of the F-RAM is similar to serial flash and serial EEPROMs. The major difference between the FM25L04B and a serial flash or EEPROM with the same pinout is the F-RAM's superior write performance, high endurance, and low power consumption. both of these modes, data is clocked into the F-RAM on the rising edge of SCK starting from the first rising edge after CS goes active. The SPI protocol is controlled by opcodes. These opcodes specify the commands from the bus master to the slave device. After CS is activated, the first byte transferred from the bus master is the opcode. Following the opcode, any addresses and data are then transferred. The CS must go inactive after an operation is complete and before a new opcode can be issued. The commonly used terms in the SPI protocol are as follows: Memory Architecture SPI Master When accessing the FM25L04B, the user addresses 512 locations of eight data bits each. These eight data bits are shifted in or out serially. The addresses are accessed using the SPI protocol, which includes a chip select (to permit multiple devices on the bus), an opcode including the upper address bit, and a word address. The word address consist of the lower 8-address bits. The complete address of 9 bits specifies each byte address uniquely. The SPI master device controls the operations on a SPI bus. An SPI bus may have only one master with one or more slave devices. All the slaves share the same SPI bus lines and the master may select any of the slave devices using the CS pin. All of the operations must be initiated by the master activating a slave device by pulling the CS pin of the slave LOW. The master also generates the SCK and all the data transmission on SI and SO lines are synchronized with this clock. Most functions of the FM25L04B are either controlled by the SPI interface or handled by on-board circuitry. The access time for the memory operation is essentially zero, beyond the time needed for the serial protocol. That is, the memory is read or written at the speed of the SPI bus. Unlike a serial flash or EEPROM, it is not necessary to poll the device for a ready condition because writes occur at bus speed. By the time a new bus transaction can be shifted into the device, a write operation is complete. This is explained in more detail in the interface section. SPI Slave Note The FM25L04B contains no power management circuits other than a simple internal power-on reset circuit. It is the user’s responsibility to ensure that VDD is within datasheet tolerances to prevent incorrect operation. It is recommended that the part is not powered down with chip enable active. Serial Peripheral Interface – SPI Bus The FM25L04B is a SPI slave device and operates at speeds up to 10 MHz. This high-speed serial bus provides high-performance serial communication to a SPI master. Many common microcontrollers have hardware SPI ports allowing a direct interface. It is quite simple to emulate the port using ordinary port pins for microcontrollers that do not. The FM25L04B operates in SPI Mode 0 and 3. SPI Overview The SPI is a four-pin interface with Chip Select (CS), Serial Input (SI), Serial Output (SO), and Serial Clock (SCK) pins. The SPI is a synchronous serial interface, which uses clock and data pins for memory access and supports multiple devices on the data bus. A device on the SPI bus is activated using the CS pin. The relationship between chip select, clock, and data is dictated by the SPI mode. This device supports SPI modes 0 and 3. In Document Number: 001-86152 Rev. *D The SPI slave device is activated by the master through the Chip Select line. A slave device gets the SCK as an input from the SPI master and all the communication is synchronized with this clock. An SPI slave never initiates a communication on the SPI bus and acts only on the instruction from the master. The FM25L04B operates as an SPI slave and may share the SPI bus with other SPI slave devices. Chip Select (CS) To select any slave device, the master needs to pull down the corresponding CS pin. Any instruction can be issued to a slave device only while the CS pin is LOW. When the device is not selected, data through the SI pin is ignored and the serial output pin (SO) remains in a high-impedance state. Note A new instruction must begin with the falling edge of CS. Therefore, only one opcode can be issued for each active Chip Select cycle. Serial Clock (SCK) The Serial Clock is generated by the SPI master and the communication is synchronized with this clock after CS goes LOW. The FM25L04B enables SPI modes 0 and 3 for data communication. In both of these modes, the inputs are latched by the slave device on the rising edge of SCK and outputs are issued on the falling edge. Therefore, the first rising edge of SCK signifies the arrival of the first bit (MSB) of a SPI instruction on the SI pin. Further, all data inputs and outputs are synchronized with SCK. Data Transmission (SI/SO) The SPI data bus consists of two lines, SI and SO, for serial data communication. SI is also referred to as Master Out Slave In (MOSI) and SO is referred to as Master In Slave Out (MISO). The Page 4 of 20 FM25L04B The word address consist of the lower 8-address bits. The complete address of 9 bits specifies each byte address uniquely. master issues instructions to the slave through the SI pin, while the slave responds through the SO pin. Multiple slave devices may share the SI and SO lines as described earlier. Serial Opcode The FM25L04B has two separate pins for SI and SO, which can be connected with the master as shown in Figure 2. After the slave device is selected with CS going LOW, the first byte received is treated as the opcode for the intended operation. FM25L04B uses the standard opcodes for memory accesses. For a microcontroller that has no dedicated SPI bus, a general-purpose port may be used. To reduce hardware resources on the controller, it is possible to connect the two data pins (SI, SO) together and tie off (HIGH) the HOLD and WP pins. Figure 3 shows such a configuration, which uses only three pins. Invalid Opcode If an invalid opcode is received, the opcode is ignored and the device ignores any additional serial data on the SI pin until the next falling edge of CS, and the SO pin remains tristated. Most Significant Bit (MSB) The SPI protocol requires that the first bit to be transmitted is the Most Significant Bit (MSB). This is valid for both address and data transmission. Status Register FM25L04B has an 8-bit Status Register. The bits in the Status Register are used to configure the device. These bits are described in Table 3 on page 7. The 4-Kbit serial F-RAM requires an opcode including the upper address bit, and a word address for any read or write operation. Figure 2. System Configuration with SPI port SCK MOSI MISO SCK SPI Microcontroller SI SO FM25L04B CS HOLD WP SCK SI SO FM25L04B CS HOLD WP CS1 HO LD 1 WP1 CS2 HO LD 2 WP2 Figure 3. System Configuration without SPI port P1.0 P1.1 SCK SI SO Microcontroller FM25L04B CS HOLD WP P1.2 ■ SPI Modes FM25L04B may be driven by a microcontroller with its SPI peripheral running in either of the following two modes: ■ SPI Mode 0 (CPOL = 0, CPHA = 0) Document Number: 001-86152 Rev. *D SPI Mode 3 (CPOL = 1, CPHA = 1) For both these modes, the input data is latched in on the rising edge of SCK starting from the first rising edge after CS goes active. If the clock starts from a HIGH state (in mode 3), the first rising edge after the clock toggles is considered. The output data is available on the falling edge of SCK. Page 5 of 20 FM25L04B The two SPI modes are shown in Figure 4 on page 6 and Figure 5 on page 6. The status of the clock when the bus master is not transferring data is: ■ SCK remains at 0 for Mode 0 ■ SCK remains at 1 for Mode 3 The device detects the SPI mode from the status of the SCK pin when the device is selected by bringing the CS pin LOW. If the SCK pin is LOW when the device is selected, SPI Mode 0 is assumed and if the SCK pin is HIGH, it works in SPI Mode 3. Figure 4. SPI Mode 0 CS 0 1 2 3 5 4 6 7 WREN - Set Write Enable Latch The FM25L04B will power up with writes disabled. The WREN command must be issued before any write operation. Sending the WREN opcode allows the user to issue subsequent opcodes for write operations. These include writing the Status Register (WRSR) and writing the memory (WRITE). Sending the WREN opcode causes the internal Write Enable Latch to be set. A flag bit in the Status Register, called WEL, indicates the state of the latch. WEL = ’1’ indicates that writes are permitted. Attempting to write the WEL bit in the Status Register has no effect on the state of this bit – only the WREN opcode can set this bit. The WEL bit will be automatically cleared on the rising edge of CS following a WRDI, a WRSR, or a WRITE operation. This prevents further writes to the Status Register or the F-RAM array without another WREN command. Figure 6 illustrates the WREN command bus configuration. SCK Figure 6. WREN Bus Configuration SI 7 6 5 4 3 2 1 0 MSB CS 0 LSB 1 2 3 4 5 6 7 SCK Figure 5. SPI Mode 3 SI 0 0 0 0 CS 0 1 2 3 5 4 6 1 0 WRDI - Reset Write Enable Latch SCK SI 1 HI-Z SO 7 0 7 6 5 4 3 2 MSB 1 The WRDI command disables all write activity by clearing the Write Enable Latch. The user can verify that writes are disabled by reading the WEL bit in the Status Register and verifying that WEL is equal to ‘0’. Figure 7 illustrates the WRDI command bus configuration. 0 LSB Power Up to First Access The FM25L04B is not accessible for a tPU time after power up. Users must comply with the timing parameter tPU, which is the minimum time from VDD (min) to the first CS LOW. There are six commands, called opcodes, that can be issued by the bus master to the FM25L04B. They are listed in Table 1. These opcodes control the functions performed by the memory. Table 1. Opcode commands Description 1 2 3 4 5 6 7 SCK SI SO 0 0 0 0 0 1 0 0 HI-Z Opcode WREN Set write enable latch 0000 0110b WRDI Write disable 0000 0100b RDSR Read Status Register 0000 0101b WRSR Write Status Register 0000 0001b READ Read memory data 0000 A011b WRITE Write memory data 0000 A010b Document Number: 001-86152 Rev. *D CS 0 Command Structure Name Figure 7. WRDI Bus Configuration Page 6 of 20 FM25L04B Status Register and Write Protection The write protection features of the FM25L04B are multi-tiered and are enabled through the status register. First, a WREN opcode must be issued prior to any write operation. Assuming that writes are enabled using WREN, writes to memory are controlled by the WP pin and the Status Register. When WP is LOW, the entire part is write-protected. When WP is HIGH, the memory protection is subject to the Status Register. Writes to the Status Register are performed using the WREN and WRSR commands and subject to the WP pin. The Status Register is organized as follows. (The default value shipped from the factory for bits in the Status Register is ‘0’). Table 2. Status Register Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 X (0) X (0) X (0) X (0) BP1 (0) BP0 (0) WEL (0) X (0) Table 3. Status Register Bit Definition Bit Definition Description Bit 0 Don’t care This bit is non-writable and always returns ‘0’ upon read. Bit 1 (WEL) Write Enable Latch WEL indicates if the device is write enabled. This bit defaults to ‘0’ (disabled) on power-up. WEL = '1' --> Write enabled WEL = '0' --> Write disabled Bit 2 (BP0) Block Protect bit ‘0’ Used for block protection. For details, see Table 4 on page 7. Bit 3 (BP1) Block Protect bit ‘1’ Used for block protection. For details, see Table 4 on page 7. Bit 4-7 Don’t care These bits are non-writable and always return ‘0’ upon read. Bits 0 and 4-7 are fixed at ‘0’; none of these bits can be modified. Note that bit 0 (“Ready or Write in progress” bit in serial flash and EEPROM) is unnecessary, as the F-RAM writes in real-time and is never busy, so it reads out as a ‘0’. The BP1 and BP0 control the software write-protection features and are nonvolatile bits. The WEL flag indicates the state of the Write Enable Latch. Attempting to directly write the WEL bit in the Status Register has no effect on its state. This bit is internally set and cleared via the WREN and WRDI commands, respectively. BP1 and BP0 are memory block write protection bits. They specify portions of memory that are write-protected as shown in Table 4. Table 4. Block Memory Write Protection BP1 BP0 Protected Address Range 0 0 None 0 1 180h to 1FFh (upper 1/4) 1 0 100h to 1FFh (upper 1/2) 1 1 000h to 1FFh (all) The BP1 and BP0 bits and the Write Enable Latch are the only mechanisms that protect the memory from writes. The remaining write protection features protect inadvertent changes to the block protect bits. The BP1 and BP0 bits allow software to selectively write protect the array. These settings are only used when the WP pin is inactive and the WREN command has been issued. Document Number: 001-86152 Rev. *D Table 5 summarizes the write protection conditions. Table 5. Write Protection Protected Blocks Unprotected Blocks Status Register WEL WP 0 X Protected Protected Protected 1 0 Protected Protected Protected 1 1 Protected Unprotected Unprotected RDSR - Read Status Register The RDSR command allows the bus master to verify the contents of the Status Register. Reading the status register provides information about the current state of the write-protection features. Following the RDSR opcode, the FM25L04B will return one byte with the contents of the Status Register. WRSR - Write Status Register The WRSR command allows the SPI bus master to write into the Status Register and change the write protect configuration by setting the BP0 and BP1 bits as required. Before issuing a WRSR command, the WP pin must be HIGH or inactive. Note that on the FM25L04B, WP prevents writing to the Status Register and the memory array. Before sending the WRSR command, the user must send a WREN command to enable writes. Executing a WRSR command is a write operation and therefore, clears the Write Enable Latch. Page 7 of 20 FM25L04B Figure 8. RDSR Bus Configuration CS 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 SCK Opcode SI 0 0 0 0 0 1 0 1 0 Data HI-Z SO D7 D6 D5 D4 D3 D2 D1 D0 MSB LSB Figure 9. WRSR Bus Configuration (WREN not shown) CS 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 SCK Data Opcode SI 0 SO 0 0 0 0 0 0 1 X X D3 D2 X X LSB HI-Z Memory Operation The SPI interface, which is capable of a high clock frequency, highlights the fast write capability of the F-RAM technology. Unlike serial flash and EEPROMs, the FM25L04B can perform sequential writes at bus speed. No page register is needed and any number of sequential writes may be performed. Write Operation All writes to the memory begin with a WREN opcode. The WRITE opcode includes the upper bit of the memory address. Bit 3 in the opcode corresponds to the upper address bit (A8). The next byte is the lower 8-bits of the address (A7-A0). In total, the 9-bits specify the address of the first byte of the write operation. Subsequent bytes are data bytes, which are written sequentially. Addresses are incremented internally as long as the bus master continues to issue clocks and keeps CS LOW. If the last address of 1FFh is reached, the counter will roll over to 000h. Data is written MSB first. The rising edge of CS terminates a write operation. A write operation is shown in Figure 10. Note When a burst write reaches a protected block address, the automatic address increment stops and all the subsequent data bytes received for write will be ignored by the device. Document Number: 001-86152 Rev. *D X X MSB EEPROMs use page buffers to increase their write throughput. This compensates for the technology's inherently slow write operations. F-RAM memories do not have page buffers because each byte is written to the F-RAM array immediately after it is clocked in (after the eighth clock). This allows any number of bytes to be written without page buffer delays. Note If the power is lost in the middle of the write operation, only the last completed byte will be written. Read Operation After the falling edge of CS, the bus master can issue a READ opcode. The READ opcode includes the upper bit of the memory address. Bit 3 in the opcode corresponds to the upper address bit (A8). The next byte is the lower 8-bits of the address (A7-A0). In total, the 9-bits specify the address of the first byte of the read operation. After the opcode and address are issued, the device drives out the read data on the next eight clocks. The SI input is ignored during read data bytes. Subsequent bytes are data bytes, which are read out sequentially. Addresses are incremented internally as long as the bus master continues to issue clocks and CS is LOW. If the last address of 1FFh is reached, the counter will roll over to 000h. Data is read MSB first. The rising edge of CS terminates a read operation and tristates the SO pin. A read operation is shown in Figure 11. Page 8 of 20 FM25L04B Figure 10. Memory Write (WREN not shown) CS 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 SCK Opcode 0 SI 0 0 Data Byte Address 0 A8 0 1 0 A7 A6 A5 A4 A3 A2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0 LSB MSB MSB LSB HI-Z SO Figure 11. Memory Read CS 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 SCK Opcode SI 0 0 0 0 A8 0 Byte Address 1 1 A7 A6 A5 A4 A3 A2 A1 A0 MSB LSB Data HI-Z SO D7 D6 D5 D4 D3 D2 D1 D0 MSB HOLD Pin Operation The HOLD pin can be used to interrupt a serial operation without aborting it. If the bus master pulls the HOLD pin LOW while SCK is LOW, the current operation will pause. Taking the HOLD pin LSB HIGH while SCK is LOW will resume an operation. The transitions of HOLD must occur while SCK is LOW, but the SCK and CS can toggle during a hold state. ~ ~ Figure 12. HOLD Operation[2] ~ ~ CS SI VALID IN SO VALID IN ~ ~ HOLD ~ ~ ~ ~ SCK Note 2. Figure shows HOLD operation for input mode and output mode. Document Number: 001-86152 Rev. *D Page 9 of 20 FM25L04B Endurance The FM25L04B devices are capable of being accessed at least 1013 times, reads or writes. An F-RAM memory operates with a read and restore mechanism. Therefore, an endurance cycle is applied on a row basis for each access (read or write) to the memory array. The F-RAM architecture is based on an array of rows and columns of 64 rows of 64-bits each. The entire row is internally accessed once whether a single byte or all eight bytes are read or written. Each byte in the row is counted only once in an endurance calculation. Table 6 shows endurance calculations for a 64-byte repeating loop, which includes an opcode, a starting Document Number: 001-86152 Rev. *D address, and a sequential 64-byte data stream. This causes each byte to experience one endurance cycle through the loop. Table 6. Time to Reach Endurance Limit for Repeating 64-byte Loop SCK Freq (MHz) Endurance Cycles/sec Endurance Cycles/year Years to Reach Limit 10 18,660 5.88 × 1011 17.0 11 34.0 10 170.1 5 1 9,330 1,870 2.94 × 10 5.88 × 10 Page 10 of 20 FM25L04B Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. These user guidelines are not tested. Storage temperature ................................ –55 C to +150 C Package power dissipation capability (TA = 25 °C) ................................................. 1.0 W Surface mount lead soldering temperature (3 seconds) ......................................... +260 C DC output current (1 output at a time, 1s duration) .... 15 mA Maximum accumulated storage time At 150 °C ambient temperature ................................. 1000 h At 125 °C ambient temperature ................................11000 h At 85 °C ambient temperature .............................. 121 Years Electrostatic Discharge Voltage Human Body Model (AEC-Q100-002 Rev. E) ................... 4 kV Charged Device Model (AEC-Q100-011 Rev. B) ........... 1.25 kV Machine Model (AEC-Q100-003 Rev. E) .......................... 300 V Ambient temperature with power applied ................................... –55 °C to +125 °C Latch up current ..................................................... > 140 mA Supply voltage on VDD relative to VSS .........–1.0 V to +5.0 V Operating Range Input voltage ............. –1.0 V to +5.0 V and VIN < VDD+1.0 V DC voltage applied to outputs in High Z state .................................... –0.5 V to VDD + 0.5 V Range Ambient Temperature (TA) VDD Automotive-E –40 C to +125 C 3.0 V to 3.6 V Transient voltage (< 20 ns) on any pin to ground potential ................. –2.0 V to VDD + 2.0 V DC Electrical Characteristics Over the Operating Range Parameter VDD Power supply IDD VDD supply current ISB Min Typ [3] Max Unit 3.0 3.3 3.6 V SCK toggling between fSCK = 1 MHz VDD – 0.3 V and VSS, fSCK = 10 MHz other inputs VSS or VDD – 0.3 V. SO = Open. – – 0.2 mA – – 2 mA CS = VDD. All other TA = 85 °C inputs VSS or VDD. TA = 125 °C – – 6 A – – 20 A Description VDD standby current Test Conditions ILI Input leakage current VSS < VIN < VDD – – ±1 A ILO Output leakage current VSS < VOUT < VDD – – ±1 A VIH Input HIGH voltage 0.75 × VDD – VDD + 0.3 V VIL Input LOW voltage – 0.3 – 0.25 × VDD V VOH Output HIGH voltage IOH = –2 mA VDD – 0.8 – – V VOL Output LOW voltage IOL = 2 mA – – 0.4 V VHYS[4] Input Hysteresis (CS and SCK pin) 0.05 × VDD – – V Notes 3. Typical values are at 25 °C, VDD = VDD(typ). Not 100% tested. 4. This parameter is characterized but not 100% tested. Document Number: 001-86152 Rev. *D Page 11 of 20 FM25L04B Data Retention and Endurance Parameter TDR NVC Description Test condition TA = 125 C Data retention Endurance Min Max Unit 11000 – Hours Years TA = 105 C 11 – TA = 85 C 121 – Over operating temperature 1013 – Cycles Example of an F-RAM Life Time in an AEC-Q100 Automotive Application An application does not operate under a steady temperature for the entire usage life time of the application. Instead, it is often expected to operate in multiple temperature environments throughout the application’s usage life time. Accordingly, the retention specification for F-RAM in applications often needs to be calculated cumulatively. An example calculation for a multi-temperature thermal profiles is given below. Tempeature T Time Factor t T1 = 125 C T2 = 105 C T3 = 85 C T4 = 55 C Acceleration Factor with respect to Tmax A [5] LT A = ------------------------ = e L Tmax t1 = 0.1 t2 = 0.15 t3 = 0.25 t4 = 0.50 1 Ea 1 --------------------- --- – k T Tmax Profile Factor P Profile Life Time L (P) 1 P = -------------------------------------------------------t1 t2 t3- -----t4- ------- + ------- + ----- A1 A2 A3 + A4 L P = P L Tmax 8.33 > 10.46 Years A1 = 1 A2 = 8.67 A3 = 95.68 A4 = 6074.80 Capacitance Parameter [6] Description CO Output pin capacitance (SO) CI Input pin capacitance Test Conditions Max Unit 8 pF 6 pF TA = 25 C, f = 1 MHz, VDD = VDD(typ) Thermal Resistance Description Parameter JA JC Thermal resistance (junction to ambient) Thermal resistance (junction to case) Test Conditions 8-pin SOIC Unit Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA / JESD51. 148 C/W 48 C/W AC Test Conditions Input pulse levels .................................10% and 90% of VDD Input rise and fall times ...................................................5 ns Input and output timing reference levels ................0.5 × VDD Output load capacitance .............................................. 30 pF Notes 5. Where k is the Boltzmann constant 8.617 × 10-5 eV/K, Tmax is the highest temperature specified for the product, and T is any temperature within the F-RAM product specification. All temperatures are in Kelvin in the equation. 6. This parameter is characterized but not 100% tested. Document Number: 001-86152 Rev. *D Page 12 of 20 FM25L04B AC Switching Characteristics Over the Operating Range Parameters [7] Cypress Parameter Description Alt. Parameter Min Max Unit fSCK – SCK Clock frequency 0 10 MHz tCH – Clock HIGH time 40 – ns tCL – Clock LOW time 40 – ns tCSU tCSS Chip select setup 10 – ns tCSH tCSH Chip select hold 10 – ns tHZCS Output disable time – 30 ns tODV tCO Output data valid time – 35 ns tOH – Output hold time 0 – ns tD 100 – ns tOD [8, 9] – Deselect time [10, 11] – Data in rise time – 50 ns tF[10, 11] – Data in fall time – 50 ns tSU tSD Data setup time 5 – ns tH tHD Data hold time 5 – ns tHS tSH HOLD setup time 10 – ns tHH tHH HOLD hold time 10 – ns tHZ[8, 9] tLZ[9] tHHZ HOLD LOW to HI-Z – 30 ns tHLZ HOLD HIGH to data active – 30 ns tR Notes 7. Test conditions assume a signal transition time of 5 ns or less, timing reference levels of 0.5 × VDD, input pulse levels of 10% to 90% of VDD, and output loading of the specified IOL/IOH and 30 pF load capacitance shown in AC Test Conditions on page 12. 8. tOD and tHZ are specified with a load capacitance of 5 pF. Transition is measured when the outputs enter a high impedance state. 9. This parameter is characterized but not 100% tested. 10. Rise and fall times measured between 10% and 90% of waveform. 11. These parameters are guaranteed by design and are not tested. Document Number: 001-86152 Rev. *D Page 13 of 20 FM25L04B Figure 13. Synchronous Data Timing (Mode 0) tD CS tCSU tCH tCL tCSH SCK tSU SI tH VALID IN VALID IN VALID IN tOH tODV SO HI-Z tOD HI-Z CS SCK tHH ~ ~ ~ ~ Figure 14. HOLD Timing tHS ~ ~ tHS VALID IN tHZ Document Number: 001-86152 Rev. *D VALID IN tLZ ~ ~ SO tSU ~ ~ HOLD SI tHH Page 14 of 20 FM25L04B Power Cycle Timing Over the Operating Range Parameter Description Min Max Unit tPU Power-up VDD(min) to first access (CS LOW) 1 – ms tPD Last access (CS HIGH) to power-down (VDD(min)) 0 – µs tVR [12] VDD power-up ramp rate 30 – µs/V tVF [12] VDD power-down ramp rate 20 – µs/V VDD ~ ~ Figure 15. Power Cycle Timing VDD(min) tVR CS tVF tPD ~ ~ tPU VDD(min) Note 12. Slope measured at any point on VDD waveform. Document Number: 001-86152 Rev. *D Page 15 of 20 FM25L04B Ordering Information Package Diagram Ordering Code Package Type FM25L04B-GA 51-85066 8-pin SOIC FM25L04B-GATR 51-85066 8-pin SOIC Operating Range Automotive-E All these parts are Pb-free. Contact your local Cypress sales representative for availability of these parts. Ordering Code Definitions FM 25 L 04 B - G A TR Option: blank = Standard; TR = Tape and Reel Temperature Range: A = Automotive-E (–40 C to +125 C) Package Type: G = 8-pin SOIC; DG = 8-pin TDFN Die revision: B Density: 04 = 4-Kbit Voltage: L = 3.0 V to 3.6 V SPI F-RAM Cypress Document Number: 001-86152 Rev. *D Page 16 of 20 FM25L04B Package Diagrams Figure 16. 8-pin SOIC (150 Mils) Package Outline, 51-85066 51-85066 *G Document Number: 001-86152 Rev. *D Page 17 of 20 FM25L04B Acronyms Acronym Document Conventions Description Units of Measure AEC Automotive Electronics Council CPHA Clock Phase °C degree Celsius CPOL Clock Polarity Hz hertz EEPROM Electrically Erasable Programmable Read-Only Memory kHz kilohertz K kilohm Kbit kilobit kV kilovolt MHz megahertz A microampere s microsecond mA milliampere ms millisecond ns nanosecond ohm % percent pF picofarad V volt W watt EIA Electronic Industries Alliance I/O Input/Output JEDEC Joint Electron Devices Engineering Council JESD JEDEC Standards LSB Least Significant Bit MSB Most Significant Bit F-RAM Ferroelectric Random Access Memory RoHS Restriction of Hazardous Substances SPI Serial Peripheral Interface SOIC Small Outline Integrated Circuit Document Number: 001-86152 Rev. *D Symbol Unit of Measure Page 18 of 20 FM25L04B Document History Page Document Title: FM25L04B, 4-Kbit (512 × 8) Serial (SPI) Automotive F-RAM Document Number: 001-86152 Rev. ECN No. Orig. of Change Submission Date ** 3912930 GVCH 02/25/2013 New spec *A 3985108 GVCH 05/07/2013 Updated SOIC package marking scheme *B 4227066 GVCH 01/24/2014 Converted to Cypress standard format Updated Maximum Ratings table - Removed Moisture Sensitivity Level (MSL) - Added junction temperature and latch up current Updated Data Retention and Endurance table Added “Example of an F-RAM Life Time in an AEC-Q100 Automotive Application” table Added footnote 5 Added Thermal Resistance table Removed Package Marking Scheme (top mark) Completing Sunset Review. *C 4724164 PSR 04/14/2015 Updated Functional Description: Added “For a complete list of related resources, click here.” at the end. Updated Package Diagrams: spec 51-85066 – Changed revision from *F to *G. Updated to new template. *D 4884720 ZSK / PSR 08/14/2015 Updated Maximum Ratings: Updated ratings of “Storage temperature” (Replaced “+125 °C” with “+150 C”). Removed “Maximum junction temperature”. Added “Maximum accumulated storage time”. Added “Ambient temperature with power applied”. Document Number: 001-86152 Rev. *D Description of Change Page 19 of 20 FM25L04B Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. PSoC® Solutions Products Automotive Clocks & Buffers Interface Lighting & Power Control Memory PSoC Touch Sensing USB Controllers Wireless/RF cypress.com/go/automotive cypress.com/go/clocks cypress.com/go/interface cypress.com/go/powerpsoc psoc.cypress.com/solutions PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP Cypress Developer Community Community | Forums | Blogs | Video | Training cypress.com/go/memory cypress.com/go/psoc cypress.com/go/touch Technical Support cypress.com/go/support cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2014-2015. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 001-86152 Rev. *D Revised August 14, 2015 All products and company names mentioned in this document may be the trademarks of their respective holders. Page 20 of 20