TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 1500 WATT LOW VOLTAGE TRANSIENT VOLTAGE SUPPRESSOR Qualified per MIL-PRF-19500/500 DEVICES LEVELS 1N5907 JAN JANTX JANTXV DESCRIPTION This unidirectional low voltage Transient Voltage Suppressor (TVS) device for the 1N5907 JEDEC registration has a high Peak Pulse Power rating of 1500 W with extremely fast response times. The 1N5907 is available in a military qualified version as described in the Features section herein. It’s most often used for protecting against transients from inductive switching environments, induced RF effects, or induced secondary lightning effects as found in surge levels of IEC61000-4-5 described herein. It’s also very successful in protecting airborne avionics and electrical systems when low voltage is required. Since their response time is virtually instantaneous, they can also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com DO-13 (DO-202A) FEATURES ¾ Unidirectional TVS for thru-hole mounting ¾ Suppresses transients up to 1500 watts @ 10/1000 µs (Figure 1) in less than 100 pico seconds ¾ Low working voltage (VWM) of 5 V ¾ Hermetic sealed DO-13 metal package for 1N5907 ¾ JAN/TX/TXV military qualification available for 1N5907 per MIL-PRF19500/500 by adding JAN, JANTX, or JANTXV prefix, e.g. JANTXV1N5907 ¾ Surface mount equivalent packages also available as SMCJ5.0 or SMCG5.0 in separate data sheet (consult factory for other surface mount options) T4-LDS-0095 Rev. 2 (101572) Page 1 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 APPLICATIONS / BENEFITS ¾ Protection from switching transients and induced RF ¾ Protects TTL, ECL, DTL, MOS, MSI, and other integrated circuits requiring 5.0 V or lower power supplies ¾ Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4 ¾ Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance: Class 1 thru 4 ¾ Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance: Class 1 thru 4 ¾ Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance: Class 2 & 3 ¾ 1N5907 Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS ¾ 1500 Watts for 10/1000 μs at lead temperature (TL) 25oC (See Figs. 1, 2, and 4) with repetition rate of 0.01% or less* ¾ Operating & Storage Temperatures: -65o to +175oC for 1N5907 ¾ THERMAL RESISTANCE (junction to lead): 50oC/W for 1N5907 ¾ THERMAL RESISTANCE (junction to ambient): 110 oC/W for 1N5907 ¾ DC Power Dissipation* (1N5907): 1 Watt at TL <125oC 3/8” (10 mm) from body, or 1 Watt at TA ≤+65oC when mounted on FR4 PC board as described for thermal resistance junction to ambient ¾ Forward surge current: 200 A for 8.3ms half-sine wave at TA = +25oC ¾ Solder Temperatures: 260 o C for 10 s (maximum) MECHANICAL AND PACKAGING ¾ CASE (1N5907): DO-13 (DO-202AA) welded hermetically sealed metal and glass ¾ FINISH: External metal surfaces are Tin-Lead (Sn-Pb) plated and solderable per MIL-STD-750 method 2026 ¾ POLARITY: Polarity indicated by diode symbol or cathode band (cathode connected to case for 1N5907) ¾ MARKING: Part number and polarity symbol ¾ WEIGHT: 1.4 grams. (Approx) ¾ TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number) ¾ See package dimension on last page * TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage (VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region). T4-LDS-0095 Rev. 2 (101572) Page 2 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS @ 25oC JEDEC Type No. 1N5907 * Reverse Standoff Voltage VWM (NOTE 1) Minimum Breakdown Voltage V(BR) @ 1 mA Maximum Standby Current ID @ VWM Maximum Clamping Voltage VC @ IPP1 (FIG. 3) Peak Pulse Current IPP1 (FIG. 3) Maximum Clamping Voltage VC @ IPP2 (FIG. 3) Peak Pulse Current IPP2 (FIG. 3) Maximum Clamping Voltage VC @ IPP3 (FIG. 3) Peak Pulse Current IPP3 (FIG. 3) Volts Volts μA Volts Amps Volts Amps Volts Amps 5.0 6.0 300 7.6 30 8.0 60 8.5 120 * Also available in military qualified types with a JAN, JANTX, or JANTXV prefix per MIL-PRF-19500/500. NOTE 1: A TVS is normally selected according to the reverse “Standoff Voltage” VWM which should be equal to or greater than the dc or continuous peak operating voltage level. SYMBOLS & DEFINITIONS Symbol Definition VWM Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition. (See Note 1 above) V(BR) Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25oC VC Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when subjected to the peak pulse current in a one millisecond time interval. The peak pulse voltage is the combination of voltage rise due to both the series resistance and thermal rise and positive temperature coefficient (αV(BR)) IPP Peak Pulse Current: The peak current during the impulse (See Figure 2) PPP Peak Pulse Power: The pulse power as determined by the product of VC and IPP ID Standby Current: The current at the standoff voltage (VWM) I(BR) Breakdown Current: The current used for measuring Breakdown Voltage (V(BR)) T4-LDS-0095 Rev. 2 (101572) Page 3 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 GRAPHS FIGURE 1 PEAK PULSE POWER VS. PULSE TIME FIGURE 2 DERATING CURVE Test wave form parameters tr = 10 μs tp = 1000 μs FIGURE 3 PULSE WAVEFORM T4-LDS-0095 Rev. 2 (101572) FIGURE 4 TYPICAL CLAMPING VOLTAGE (VC) VS. PEAK PULSE CURRENT (IPP) Page 4 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The major diameter is essentially constant along its length. 4. Within this zone, diameter may vary to allow for lead finishes and irregularities. 5. Dimension to allow for pinch or seal deformation anywhere along tubulation. 6. Lead 1 (cathode) shall be electrically connected to the case. 7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. Symbol BD BL BLT CD LD LL LU Dimensions Inches Millimeters Min Max Min Max .215 .235 5.46 5.97 .293 .357 7.44 9.07 .570 14.48 .045 .100 1.14 2.54 .025 .035 0.64 0.89 1.000 1.625 25.40 41.28 .188 4.78 Notes 3 5 4 4 FIGURE 1. Physical dimensions (DO-13). T4-LDS-0095 Rev. 2 (101572) Page 5 of 5