TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER Qualified per MIL-PRF-19500/162 • Glass Passivated Die • VRRM 200 to 1000 Volts • Glass to Metal Seal Construction DEVICES LEVELS 1N1614 1N1615 1N1616 1N4458 1N4459 1N1614R 1N1615R 1N1616R 1N4458R 1N4459R JAN JANTX ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Peak Repetitive Reverse Voltage 1N1614 1N1615 1N1616 1N4458 1N4459 1N1614R 1N1615R 1N1616R 1N4458R 1N4459R Average Forward Current, TC = 150° Peak Surge Forward Current @ tp = 8.3ms, half sinewave, TC = 150°C Thermal Resistance, Junction to Case Operating Case Temperature Range Storage Temperature Range Symbol Value Unit VRWM 200 400 600 800 1000 V IF 15 A IFSM 100 A RθJC 4.5 °C/W Tj -65°C to 175°C °C TSTG -65°C to 175°C °C DO-203AA (DO-4) ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Forward Voltage IFM = 15A, TC = 25°C* Reverse Current VRM = 200, TC = 25°C VRM = 400, TC = 25°C VRM = 600, TC = 25°C VRM = 800, TC = 25°C VRM = 1000, TC = 25°C Min. Max. Unit VFM 1.5 V 1N1614 1N1615 1N1616 1N4458 1N4459 1N1614R 1N1615R 1N1616R 1N4458R 1N4459R IRM 50 μA 1N1614 1N1615 1N1616 1N4458 1N4459 1N1614R 1N1615R 1N1616R 1N4458R 1N4459R IRM 500 μA Reverse Current VRM = 200, TC = 150°C VRM = 400, TC = 150°C VRM = 600, TC = 150°C VRM = 800, TC = 150°C VRM = 1000, TC = 150°C * Pulse test: Pulse width 300 µsec, Duty cycle 2% Note: T4-LDS-0139 Rev. 1 (091749) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER GRAPHS FIGURE 1 FIGURE 3 TYPICAL FORWARD CHARACTERISTICS FORWARD CURRENT DERATING FIGURE 4 TRANSIENT THERMAL IMPEDANCE FIGURE 2 TYPICAL REVERSE CHARACTERISTICS T4-LDS-0139 Rev. 1 (091749) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER PACKAGE DIMENSIONS NOTES: Symbol 1. 2. Dimensions are in inches. Millimeter equivalents are given for general information only. 3. Angular orientation of this terminal is undefined. 4. Diameter of unthreaded portion .189 inch (4.80 mm) maximum; .163 inch (4.14 mm) minimum. 5. The A.S.A. thread reference is 10-32UNF2A (unplated). 6. The maximum diameter of plated threads shall be basic pitch diameter .169 inch (4.29 mm). 7. Unit shall not be damaged by torque of 15 inch-pound applied to 10-32NF2B nut assembled on thread. 8. Complete threads shall extend to within 2.5 threads of the seating plane. 9. Terminal end shape is unrestricted. 10. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. CD CD1 CH G HF HT OAH SP SL T Dimensions Inches Millimeters Min Max Min Max .250 6.35 .424 10.77 .405 10.29 .060 1.52 .424 .437 10.77 11.10 .075 .175 1.91 4.45 .800 20.32 Notes 9 6,7,8 .422 .060 .453 10.72 1.52 11.51 Physical dimensions T4-LDS-0139 Rev. 1 (091749) Page 3 of 3