Obsolete Product – not recommended for new design LX3051 3.125 Gbps ® TM Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION LX3051 single die Coplanar Waveguide , 50 ohm High Responsivity Low Dark Current High Bandwidth Anode/Cathode on illuminated side 125µm Pad pitch Die good for wire bond or flip-chip Die good for non-hermetic package bs ol et e gurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers, transceivers, transponders, optical transmission modules and combination PIN photo diode – transimpedance amplifier. APPLICATIONS IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com WWW . Microsemi .C OM Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offer high responsivity, low dark current, and high bandwidth for high performance and low sensitivity receiver design. The LX3051 3Gbps coplanar waveguide photodiode is currently offered in die form allowing manufacturers the versatility of custom assembly confi- 1310nm CATV Optical Applications SONET/SDH OC-48, ATM 2.5Gb/s or 3.125Gb/s Ethernet (8B/10B) Fibre Channel 1310nm VCSEL receivers Optical Backplane BENEFITS Large Wirebond Contact Pads Low Contact Resistance Wire bond or flip chip applications Ground- signal-Ground pad configuration for standard RF test probes PRODUCT HIGHLIGHT Coplanar Design (gnd-signal-gnd) 50 ohm characteristic impedance 125µm standard pad pitch for ease of test Large 75µm x 75µm pad size for ease of packaging Wire bond or Flip Chip capability • Copyright © 2003 Rev. 1.1, 9/15/2005 LX3051 O • • • Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 Obsolete Product – not recommended for new design LX3051 3.125 Gbps ® TM Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET Test conditions (unless otherwise noted): TA = 25 C, VR = 5 Volts Parameter ` Symbol Min LX3051 Typ Max Units MAXIMUM RATINGS Operating Junction Temperature Range Storage Temperature Range TJ -20 +85 °C TSTG -55 +125 °C +260 °C 10 seconds maximum at temperature bs ol et e Maximum Soldering Temperature ` Test Conditions ELECTRICAL CHARACTERISTICS Active Area Diameter 80 Responsivity (1 & 3) R Dark Current ID Breakdown Voltage BVR Capacitance C Bandwidth (2) BW VR = 5V, λ= 1550nm 0.9 1.1 VR = 5V, λ = 1310nm 0.85 1.0 VR = 5V IR = 10µ A 0.4 30 10 44 VR = 2V 0.45 0.5 VR = 5V 0.43 0.49 VR = 2V, λ = 1550nm @-3dB 4.2 5.5 VR = 5V, λ = 1550nm @-3dB 4.5 5.8 µm WWW . Microsemi .C OM CHARACTERISTICS o A/W nA Volts pF GHz Copyright © 2003 Rev. 1.1, 9/15/2005 ELECTRICALS O Note 1. Antireflective coating is ¼ wavelength at 1430nm covering 1310 and 1550nm applications 2. Bandwidth is measured at –3dB electrical power (photocurrent drops to 71% of DC value) into a 50 Ohm load 3. Photodiode responsivity in the range of 1260nm to 1580nm can be calculated from Chart 5 – Typical Spectral Responsivity of InGaAs PIN Photodiode Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 Obsolete Product – not recommended for new design LX3051 3.125 Gbps ® TM Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET DIE GEOMETRY LX3051 80 Die Dimension, µm Y 450 X 450 Pad Dimension, µm w 75 v 75 Pad Pitch, p, µm Die thickness, µm 125 152 Copyright © 2003 Rev. 1.1, 9/15/2005 ELECTRICALS O bs ol et e Active Area A, µm WWW . Microsemi .C OM Part Number Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 Obsolete Product – not recommended for new design LX3051 3.125 Gbps ® TM Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET ID @ VR=5.00V 1000.000 Min 100.000 Id@5V (nA) BV (V) Mean BV (V) MAX 10.000 AVG MIN bs ol et e BV (V) LX3051 BV over Temperature 48 47 46 45 44 43 42 41 40 Max 1.000 BV (V) 0.100 -40 -20 0 20 40 60 80 100 120 0 20 40 -2 -3 -4 -5 80 100 120 Chart 1 – LX3051 BV over Temperature Chart 2 – ID @ VR = 5V LX3051 BW (Vr = 1 to 5V, 1550nm) LX3051 CV Vr=-5V, BW=6.43GHz Vr=-4V, BW=5.95GHz C (pF) Relative S21(dB) -1 60 TEMP Temp ( C) 0 WWW . Microsemi .C OM CHARACTERISTIC CURVES Vr=-3V, BW=5.56GHz Vr=-2V, BW=4.41GHz Vr=-1V, BW=3.83GHz 0.E+00 1.E+09 2.E+09 3.E+09 4.E+09 5.E+09 6.E+09 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 C@85oC (pF) C@25oC (pF) 0 1 2 3 4 5 6 7 8 9 10 Frequency (Hz) V Chart 3 – BW(VR = 1 to 5V) Chart 4 - CV 1.2 1.0 0.8 0.6 GRAPHS Responsivity (Amps / Watts) O CHARACTERISTIC CURVES 0.4 0.2 0 800 900 1000 1100 1200 1300 1400 1500 1600 1700 Wavelength (nm) Chart 5 – Typical Spectral Responsivity of InGaAs PIN Photodiode Copyright © 2003 Rev. 1.1, 9/15/2005 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 Obsolete Product – not recommended for new design LX3051 3.125 Gbps ® TM Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET WWW . Microsemi .C OM CIRCUIT MODEL Lser Rser Cdiode Rdiode bs ol et e Cshunt Part # Lser (nH) 0.05 Cshunt (pF) 0.035 Cdiode (pF) 0.40 Rdiode (Mohm) 25 CIRCUIT MODEL O LX3051 Rser (Ohm) 12 PRECAUTIONS FOR USE ESD protection is important. Standard ESD protection procedures should be employed whenever handling InGaAs PIN photo diode. PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © 2003 Rev. 1.1, 9/15/2005 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5