Obsolete Product – not recommended for new design LX3050/52 12.5Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION LX3050 single die LX3052, 1x4 array die Coplanar Waveguide , 50ohm High Responsivity Low Dark Current High Bandwidth Anode/Cathode on illuminated side 125μm Pad pitch Die good for wire bond or flip-chip Die good for non-hermetic package bs ol et e custom assembly configurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers, transceivers, transponders, optical transmission modules and combination PIN photo diode – transimpedance amplifier. APPLICATIONS WWW . Microsemi .C OM Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offer high responsivity, low dark current, and high bandwidth for high performance and low sensitivity receiver design. The LX305X series of coplanar waveguide photo diodes are currently offered in die form allowing manufacturers the versatility of 1310nm CATV Optical Applications 1550nm DWDM Optical Applications SONET/SDH, ATM 10 Gigabit Ethernet, Fibre Channel 1310nm VCSEL receivers BENEFITS Large Wirebond Contact Pads Low Contact Resistance Wire bond or flip chip applications Ground- signal-Ground pad configuration for standard RF test probes PRODUCT HIGHLIGHT • • • O • Coplanar Design (gnd-signal-gnd) 50 ohm characteristic impedance 125 um standard pad pitch for ease of test Large 75um x 75um pad size for ease of packaging Wire bond or Flip Chip capability LX3050 LX3050/52 LX3052 Copyright © 2003 Rev. 1.1 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 Obsolete Product – not recommended for new design LX3050/52 12.5Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET Parameter ` Test Conditions Min LX3050/52 Typ Max Units MAXIMUM RATINGS Operating Junction Temperature Range Storage Temperature Range Maximum Soldering Temperature -20 -55 TJ TSTG +85 +125 +260 10 seconds maximum at temperature o C C o C o ELECTRICAL CHARACTERISTICS bs ol et e ` Symbol Active Area Diameter Responsivity (1) R Dark Current Breakdown Voltage Capacitance Bandwidth (2) Cross-talk 0.90 0.85 30 0.12 13 -35 32 1.0 0.95 0.2 45 0.135 15 5 0.15 μm A/W nA Volts pF GHz dB 1. Antireflective coating is ¼ wavelength at 1430nm covering 1310 and 1550nm applications 2. Bandwidth is measured at –3dB electrical power (photocurrent drops to 71% of DC value) into a 50 Ohm load Copyright © 2003 Rev. 1.1 ELECTRICALS O Note: ID BVR C BW S21 VR = 5V, λ = 1550nm VR = 5V, λ = 1310nm VR = 5V IR = 10 μ A VR = 5V VR = 5V, λ = 1550nm @-3dB 1x4 array only @ 10 GHz WWW . Microsemi .C OM CHARACTERISTICS Test conditions (unless otherwise noted): TA = 25oC, VR = 5 Volts Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 Obsolete Product – not recommended for new design LX3050/52 12.5Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET Active Area ,A, µm LX3050 LX3052 32 32 Die Dimension, µm Y 450 450 X 450 1200 Pad Dimension, µm w 75 75 v 75 75 Pad Pitch, p, µm Die thickness, µm 125 125 152 152 MECHANICALS O bs ol et e Part Number IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Copyright © 2003 Rev. 1.1 WWW . Microsemi .C OM DIE GEOMETRY Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 Obsolete Product – not recommended for new design LX3050/52 12.5Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET LX3050, C-V 0.25 Vr=-5V, BW=15.8GHz 9 Vr=-4V,BW=15.5GHz 0.20 Vr=-2.4V, BW=14.0GHz Vr=-2V, BW=13.5 GHz Vr=-1V, Bw =10.6GHz 7 C(pF) Vr=-3V, BW=15.0GHz 8 0.15 bs ol et e Relative S21(dB) LX3050 BW (Vr = 1-5V, 1550 nm) 0.10 0.05 6 0.00 0 5 0.0E+00 5.0E+09 1.0E+10 1.5E+10 2 4 2.0E+10 RF cross talk, LX3052 -20 -40 -60 -80 8 10 LX3050 Id@5V over Temperature 100 Id@5V (nA) 0 6 Vr(V) Frequency (Hz) RF Cross-talk (dB) WWW . Microsemi .C OM CHARACTERISTIC CURVES -100 0.0E+00 Min ID@5V (nA) 10 Mean ID@5V (nA) 1 Max ID@5V (nA) 0.1 5.0E+09 1.0E+10 1.5E+10 2.0E+10 -40 -20 0 20 40 60 80 100 120 Temp (oC) Frequency (Hz) O LX3050 BV over Temperature 60 40 30 20 Min BV (V) Mean BV (V) GRAPHS BV (V) 50 Max BV (V) 10 0 -40 -20 0 20 40 60 80 100 120 Temp (oC) Copyright © 2003 Rev. 1.1 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 Obsolete Product – not recommended for new design LX3050/52 12.5Gbps I N T E G R A T E D Coplanar InGaAs/InP PIN Photo Diode P R O D U C T S P RODUCTION D ATA S HEET WWW . Microsemi .C OM CIRCUIT MODEL Lser Rser Cdiode Rdiode bs ol et e Cshunt Part # Lser (nH) 0.012 Cshunt (pF) 0.035 Cdiode (pF) 0.10 Rdiode (Mohm) 25 PRECAUTIONS FOR USE CIRCUIT MODEL O LX3050 Rser (Ohm) 17 ESD protection is important. Standard ESD protection procedures should be employed whenever handling InGaAs PIN photo diode. PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © 2003 Rev. 1.1 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5