1N6840U3 and 1N6841U3 Compliant 35 and 45 VOLT, 10 AMP DUAL SCHOTTKY COMMON CATHODE CENTER TAP RECTIFIER Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/678 DESCRIPTION These low-profile 1N6840U3 and 1N6841U3 dual schottky rectifier devices are military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Surface mount equivalent of JEDEC registered 1N6840 and 1N6841. • • Low profile ceramic SMD. JAN, JANTX, JANTXV qualifications available per MIL-PRF-19500/678. • RoHS compliant by design. U3 (SMD-0.5) Package APPLICATIONS / BENEFITS • • • • • • High surge rating. Low reverse leakage current. Low forward voltage. Seam welded package. Low power loss. Ultrasonic aluminum wire bonds. o MAXIMUM RATINGS PER LEG @ TC = +25 C unless otherwise noted Parameters/Test Conditions Junction and Storage Temperature (1) Thermal Resistance Junction-to-Case (each individual diode) Peak Working Reverse Voltage 1N6840U3 1N6841U3 Junction Capacitance o (2) Average Rectified Output Current @ TC = +100 C Surge Peak Forward Current @ tp = 8.3 ms Symbol TJ and TSTG RӨJC Value -65 to +150 2.8 Unit o C o C/W VRWM 35 45 400 10 200 V CJ IO IFSM NOTES: 1. 1.7 ºC/W both legs tied together. 2. Derate linearly at 200 mA/ºC from TJ = TC = +100 ºC to +150 ºC. pF A A MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0127, Rev. 2 (121218) ©2012 Microsemi Corporation Page 1 of 5 1N6840U3 and 1N6841U3 MECHANICAL and PACKAGING • • • • • • CASE: Ceramic and gold over nickel plated steel. TERMINALS: Gold over nickel plated tungsten/copper. MARKING: Manufacturer ID, part number, date code, common cathode symbol. POLARITY: See schematic on last page. WEIGHT: 0.9 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N6840 U3 Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial SMD-0.5 Surface Mount JEDEC type number (see Electrical Characteristics table) Symbol CJ IFM IR TJ VF VR SYMBOLS & DEFINITIONS Definition Junction Capacitance: The junction capacitance in pF at a specified frequency (typically 1MHz) and specified voltage. Maximum Forward Current: The maximum forward current dc value, no alternating component. Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Junction Temperature: The temperature of a semiconductor junction. Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum value). Reverse Voltage: The reverse voltage dc value, no alternating component. T4-LDS-0127, Rev. 2 (121218) ©2012 Microsemi Corporation Page 2 of 5 1N6840U3 and 1N6841U3 o ELECTRICAL CHARACTERISTICS PER LEG @ TA = +25 C unless otherwise noted Parameters / Test Conditions Instantaneous Forward Voltage Drop IFM = 3 A, TA = 25 °C, 300 µs Pulse IFM = 10 A, TA = 25 °C, 300 µs Pulse IFM = 20 A, TA = 25 °C, 300 µs Pulse Instantaneous Forward Voltage Drop IF = 10 A, TA = 100 °C, 300 µs Pulse IF = 20 A, TA = 100 °C, 300 µs Pulse IF = 10 A, TA = -55 ºC, 300 µs Pulse Reverse Leakage Current Rated VR, TA = 25 °C, 300 µs pulse minimum Reverse Leakage Current Rated VR, TA = 100 °C, 300 µs pulse minimum Junction Capacitance VR = 5 V, TA = 25 °C, f = 1 MHz VSG = 50 mV (p-p) (max) T4-LDS-0127, Rev. 2 (121218) Symbol VF VF Min. Max. 0.62 0.75 0.88 0.63 0.70 0.85 Unit V V 1N6840U3, VR = 35 V 1N6841U3, VR = 45 V IR 100 µA 1N6840U3, VR = 35 V 1N6841U3, VR = 45 V IR 15 mA CJ 400 pF ©2012 Microsemi Corporation Page 3 of 5 1N6840U3 and 1N6841U3 Max. Forward Current Rating (%) GRAPHS Lead Temperature °C Forward Amperes FIGURE 1 Typical Operating Curves (TA = 25 °C Unless otherwise specified) Forward Voltage FIGURE 2 1N6841 VF vs. IF T4-LDS-0127, Rev. 2 (121218) ©2012 Microsemi Corporation Page 4 of 5 1N6840U3 and 1N6841U3 PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. Schematic T4-LDS-0127, Rev. 2 (121218) ©2012 Microsemi Corporation Symbol A B C D E F G H I J K L Term 1 Term 2 Term 3 DIMENSIONS INCH MILLIMETERS Min Max Min Max 0.111 0.122 2.82 3.10 0.291 0.301 7.39 7.65 0.395 0.405 10.03 10.29 0.281 0.291 7.14 7.39 0.220 0.230 5.59 5.84 0.115 0.125 2.92 3.18 2.29 2.54 0.090 0.100 3.18 3.43 0.125 0.135 0.073 TYP. 1.85 TYP. 0.083 TYP. 2.11 TYP. 0.005 TYP. 0.13 TYP. 0.015 TYP. 0.38 TYP. Common Cathode Anode 1 (See Schematic) Anode 2 (See Schematic) Page 5 of 5