PHILIPS BCW32

DISCRETE SEMICONDUCTORS
DATA SHEET
BCW31; BCW32; BCW33
NPN general purpose transistors
Product data sheet
Supersedes data of 2000 Jul 04
2004 Feb 06
NXP Semiconductors
Product data sheet
BCW31; BCW32;
BCW33
NPN general purpose transistors
FEATURES
PINNING
• Low current (100 mA)
PIN
• Low voltage (32 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• General purpose switching and amplification.
DESCRIPTION
NPN transistors in a plastic SOT23 package.
PNP complements: BCW29 and BCW30.
handbook, halfpage
3
3
MARKING
1
TYPE NUMBER
MARKING
CODE(1)
BCW31
D1*
BCW32
D2*
BCW33
D3*
1
2
2
Top view
MAM255
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
BCW31
PACKAGE
NAME
−
DESCRIPTION
VERSION
plastic surface mounted package; 3 leads
SOT23
BCW32
BCW33
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
32
V
VCEO
collector-emitter voltage
open base; IC = 2 mA
−
32
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
2004 Feb 06
Tamb ≤ 25 °C
2
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BCW31; BCW32; BCW33
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
MAX.
UNIT
−
−
100
nA
IE = 0; VCB = 32 V; Tj = 100 °C
−
−
10
μA
−
−
100
nA
BCW31
−
190
−
BCW32
−
330
−
−
600
−
BCW31
110
−
220
BCW32
200
−
450
BCW33
420
−
800
emitter cut-off current
IC = 0; VEB = 5 V
hFE
DC current gain
IC = 10 μA; VCE = 5 V
BCW33
DC current gain
VBEsat
TYP.
IE = 0; VCB = 32 V
collector cut-off current
IEBO
VCEsat
MIN.
IC = 2 mA; VCE = 5 V
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
−
120
250
mV
IC = 50 mA; IB = 2.5 mA
−
210
−
mV
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
−
750
−
mV
IC = 50 mA; IB = 2.5 mA
−
850
−
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V
550
−
700
mV
Cc
collector capacitance
IE = Ie = 0; VCB = 10 V; f = 1 MHz
−
2.5
−
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V;
f = 100 MHz
100
−
−
MHz
F
noise figure
IC = 200 μA; VCE = 5 V;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
−
−
10
dB
2004 Feb 06
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BCW31; BCW32; BCW33
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Feb 06
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
4
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BCW31; BCW32; BCW33
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Feb 06
5
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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© NXP B.V. 2009
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Printed in The Netherlands
R75/05/pp6
Date of release: 2004 Feb 06
Document order number: 9397 750 12404