Document No.001-87921 Rev. ** ECN # 4026944 Cypress Semiconductor Qualification Report QTP# 98266 June 2013 DEEP SYNCHRONOUS FIFOS R42HD TECHNOLOGY, FAB 4 CY7C4255/ CY74265 8K/16K x 18 SYNCHRONOUS FIFOS CY7C4261/ CY7C4271 16K/32K x 9 SYNCHRONOUS FIFOS CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 8 Document No.001-87921 Rev. ** ECN # 4026944 PRODUCT QUALIFICATION HISTORY Qual Report 98266 98064 Description of Qualification Purpose Date Comp QTP 98266: New Product 7042650 Deep 8yn¢ FIFO R42HD - Fab4 Dec. 1998 NEW FAB PROCESS IN FAB 4, RAM 42HD- 7C1903HC April 1998 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 8 Document No.001-87921 Rev. ** ECN # 4026944 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 8 Document No.001-87921 Rev. ** ECN # 4026944 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Test Condition (Temp/Bias) Stress/Test Result P/F Dynamic Operating Condition, Vcc Max = 5.75V, 150C Dynamic P Dynamic Operating Condition, Vcc Max =5.5V, 150C P High Accelerated Saturation Test (HAST) 130C, 5.5V,85%RH Precondition: JESD22 Moisture Sensitivity MSL3 192 Hrs, 30C/60%RH+3IR-Reflow, 220C+5, 0C P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65C to 150C Precondition: JESD22 Moisture Sensitivity MSL3 192 Hrs, 30C/60%RH+3IR-Reflow, 220C+5, 0C P Pressure Cooker 121C, 100%RH Precondition:JESD22 Moisture Sensitivity MSL3 192 Hrs, 30C/60%RH+3IR-Reflow, 220C+5, 0C P High Temperature Storage 150C, No Bias P High Temperature Steady State life 150C, 5.75V, Vcc Max P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-B P Electrostatic Discharge Charge Device Model (ESD-CDM) 1000V JESD22-C101 P Low Temperature Operating Life -30C, 6.5V, 8MHZ P High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 8 Document No.001-87921 Rev. ** ECN # 4026944 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate1 High Temperature Operating Life2,3 Long Term Failure Rate 1 2 3 4 Device Tested/ Device Hours # Fails Activation Energy Thermal Failure Rate AF4 1320 0 N/A N/A 0 PPM 791,500DHRs 0 0.7 170 7 FIT 5 A production burn-in of 24 Hrs at 150C, 4.5V is required for the product. Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. 5 Long Term Failure Rate is based on R42HD Technology, 1MEG SRAM Qualification (QTP 98064) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 8 Document No.001-87921 Rev. ** ECN # 4026944 Reliability Test Data QTP #: 98266 DEVICE STRESS: ASSY-LOC S/S REJ FAIL MODE KOREA-Q KOREA-Q 4836524 4836524 619814558 619814558 48 48 734 595 0 0 KOREA-Q 4836524 619814558 COMP 3 0 COMP 3 0 168 50 0 ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (2200V) CY7C4265-AC STRESS: DURATION ESD-CHARGE DEVICE MODEL (1000V) CY7C4265-AC STRESS: ASSYLOT# HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 5.75V) CY7C4265-AC CY7C4265-AC STRESS: FABLOT# KOREA-Q 4836524 619814558 PRESSURE COOKER TEST (121C, 100%RH), PRE COND 192 HR 30C/60%RH CY7C4265-AC KOREA-Q 4836524 619814558 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 8 Document No.001-87921 Rev. ** ECN # 4026944 Reliability Test Data QTP #: 98064 DEVICE STRESS: CY7C109-VC STRESS: CY7C109-VC STRESS: ASSY-LOC ABLOT# ASSYLOT# DURATION S/S REJ 519712560 COMP 3 0 3 0 ESD-CHARGE DEVICE MODEL, 1000V INDNS-O 4738602 ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2200V INDNS-O 4738602 519712560 COMP HI-ACCEL SATURATION TEST (140C, 5.5V), PRECOND. 192 HRS 30C/60%RH CY7C109-VC INDNS-O 4738602 519712560 128 46 0 CY7C109-VC CY7C109-VC INDNS-O INDNS-O 4738564 4738564 519712898 519712898 128 256 46 46 0 0 CY7C109-VC INDNS-O 4739644 519714390 128 46 0 336 500 1000 46 46 46 0 0 0 STRESS: CY7C109-VC CY7C109-VC CY7C109-VC STRESS: HIGH TEMPERATURE STORAGE (165C, NO BIAS) INDNS-O INDNS-O INDNS-O 4738602 4738602 4738602 519712560 519712560 519712560 HIGH TEMP STEADY STATE LIFE TEST (150C, 5.75V) CY7C109-VC CY7C109-VC INDNS-O INDNS-O 4738602 4738602 519712560 519712560 80 168 78 78 0 0 CY7C109-VC CY7C109-VC INDNS-O INDNS-O 4739644 4739644 519714390 519714390 80 168 78 78 0 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 5.75V) CY7C109-VC CY7C109-VC INDNS-O INDNS-O 4739644 4739644 519714390 519714390 80 500 528 527 0 0 CY7C109-VC CY7C109-VC INDNS-O INDNS-O 4745042 4745042 519800651L1 519800651L1 80 500 529 529 0 0 519714390 1000 527 0 519712560 519712560 500 1000 45 45 0 0 48 500 10 10 0 0 STRESS: CY7C109-VC STRESS: CY7C109-VC CY7C109-VC STRESS: CY7C109-VC CY7C109-VC STRESS: FAIL MODE EXTENDED DYNAMIC BURN-IN (150C, 5.75V) INDNS-O 4739644 COLD LIFE TEST (-30C, 6.5V) INDNS-O INDNS-O 4738602 4738602 READ & RECORD LIFE TEST (150C, 5.75V) INDNS-O INDNS-O 4738602 4738602 519712560 519712560 TC COND. C, -65 TO 150C, PRECOND. 192 HRS 30C/60%RH CY7C109-VC CY7C109-VC INDNS-O INDNS-O 4738602 4738602 519712560 519712560 300 1000 46 46 0 0 CY7C109-VC INDNS-O 4738564 519712898 300 46 0 CY7C109-VC INDNS-O 4739644 519714390 300 46 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 8 Document No.001-87921 Rev. ** ECN # 4026944 Document History Page Document Title: QTP # 98266 : DEEP SYNCHRONOUS FIFOS (CY7C4255/ CY74265, CY7C4261/ CY7C4271) R42HD TECHNOLOGY, FAB 4 Document Number: 001-87921 Rev. ECN Orig. of No. Change ** 4026944 ILZ Description of Change Initial Spec Release Qualification report published on Cypress.com is not in spec format. Initiated spec for QTP 98266 and removed all Cypress reference spec and replaced with Industry standard. Updated package availability based on current qualified assembly Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 8