PHILIPS PMEG2010AET

PMEG2010AEH; PMEG2010AET
1 A very low VF MEGA Schottky barrier rectifiers
Rev. 03 — 28 March 2007
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection, encapsulated in small Surface-Mounted Device
(SMD) plastic packages.
Table 1.
Product overview
Type number
Package
Configuration
NXP
JEITA
PMEG2010AEH
SOD123F
-
single
PMEG2010AET
SOT23
-
single
1.2 Features
n
n
n
n
Forward current: IF ≤ 1 A
Reverse voltage: VR ≤ 20 V
Very low forward voltage
Small SMD plastic packages
1.3 Applications
n
n
n
n
n
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 2.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF
forward current
Tsp ≤ 55 °C
-
-
1
A
VR
reverse voltage
-
-
20
V
-
380
430
mV
VF
[1]
forward voltage
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
IF = 1 A
[1]
PMEG2010AEH; PMEG2010AET
NXP Semiconductors
1 A very low VF MEGA Schottky barrier rectifiers
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Symbol
SOD123F
1
cathode
2
anode
[1]
1
1
2
2
sym001
SOT23
1
anode
2
not connected
3
cathode
3
1
1
[1]
3
2
2
n.c.
006aaa436
The marking bar indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
PMEG2010AEH
-
plastic surface-mounted package; 2 leads
SOD123F
PMEG2010AET
-
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
PMEG2010AEH
AF
PMEG2010AET
*AX
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PMEG2010AEH_PMEG2010AET_3
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 28 March 2007
2 of 11
PMEG2010AEH; PMEG2010AET
NXP Semiconductors
1 A very low VF MEGA Schottky barrier rectifiers
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VR
reverse voltage
IF
forward current
Tsp ≤ 55 °C
IFRM
repetitive peak forward current
tp ≤ 1 ms;
δ ≤ 0.25
PMEG2010AEH
PMEG2010AET
IFSM
non-repetitive peak forward
current
square wave;
tp = 8 ms
Ptot
total power dissipation
Tamb ≤ 25 °C
PMEG2010AEH
PMEG2010AET
Min
Max
Unit
-
20
V
-
1
A
-
7
A
-
6
A
-
9
A
[1]
-
375
mW
[2]
-
830
mW
[1]
-
280
mW
[2]
-
420
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance from
junction to ambient
in free air
Min
Typ
Max
Unit
[2]
-
-
330
K/W
[3]
-
-
150
K/W
[2]
-
-
440
K/W
[3]
-
-
300
K/W
PMEG2010AEH
-
-
60
K/W
PMEG2010AET
-
-
120
K/W
PMEG2010AEH
PMEG2010AET
Rth(j-sp)
thermal resistance from
junction to solder point
[4]
[1]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4]
Soldering point of cathode tab.
PMEG2010AEH_PMEG2010AET_3
Product data sheet
[1]
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 28 March 2007
3 of 11
PMEG2010AEH; PMEG2010AET
NXP Semiconductors
1 A very low VF MEGA Schottky barrier rectifiers
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
VF
IR
Cd
[1]
Parameter
Conditions
Min
Typ
Max
Unit
IF = 10 mA
-
200
220
mV
IF = 100 mA
-
265
290
mV
IF = 1 A
-
380
430
mV
VR = 5 V
-
15
50
µA
VR = 10 V
-
20
80
µA
VR = 20 V
-
50
200
µA
VR = 5 V; f = 1 MHz
-
55
70
pF
[1]
forward voltage
reverse current
diode capacitance
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PMEG2010AEH_PMEG2010AET_3
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 28 March 2007
4 of 11
PMEG2010AEH; PMEG2010AET
NXP Semiconductors
1 A very low VF MEGA Schottky barrier rectifiers
mdb823
104
IR
(µA)
IF
(mA)
006aab033
105
104
(1)
103
(2)
103
(1)
102
(2)
(3)
(4)
102
(3)
10
10
1
10−1
1
(4)
10−2
10−1
0
0.1
0.2
0.3
0.4
VF (V)
10−3
0.5
0
5
10
15
20
VR (V)
(1) Tamb = 125 °C
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
(4) Tamb = −40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
mdb824
200
Cd
(pF)
150
100
50
0
0
5
10
15
VR (V)
20
f = 1 MHz; Tamb = 25 °C
Fig 3. Diode capacitance as a function of reverse voltage; typical values
PMEG2010AEH_PMEG2010AET_3
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 28 March 2007
5 of 11
PMEG2010AEH; PMEG2010AET
NXP Semiconductors
1 A very low VF MEGA Schottky barrier rectifiers
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig 4. Duty cycle definition
9. Package outline
1.7
1.5
1.2
1.0
3.0
2.8
1.1
0.9
1
3
0.55
0.35
3.6
3.4
0.45
0.15
2.5 1.4
2.1 1.2
2.7
2.5
1
2
2
0.25
0.10
0.70
0.55
Dimensions in mm
1.9
04-11-29
Fig 5. Package outline SOD123F
0.48
0.38
Dimensions in mm
0.15
0.09
04-11-04
Fig 6. Package outline SOT23 (TO-236AB)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
3000
10000
PMEG2010AEH
SOD123F
4 mm pitch, 8 mm tape and reel
-115
-135
PMEG2010AET
SOT23
4 mm pitch, 8 mm tape and reel
-215
-235
[1]
For further information and the availability of packing methods, see Section 14.
PMEG2010AEH_PMEG2010AET_3
Product data sheet
Packing quantity
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 28 March 2007
6 of 11
PMEG2010AEH; PMEG2010AET
NXP Semiconductors
1 A very low VF MEGA Schottky barrier rectifiers
11. Soldering
4.4
4
2.9
1.6
solder lands
solder resist
2.1 1.6
1.1 1.2
solder paste
occupied area
1.1
(2×)
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 7. Reflow soldering footprint SOD123F
PMEG2010AEH_PMEG2010AET_3
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 28 March 2007
7 of 11
PMEG2010AEH; PMEG2010AET
NXP Semiconductors
1 A very low VF MEGA Schottky barrier rectifiers
2.90
2.50
0.85
2
1
solder lands
1.30
3.00
2.70
0.85
solder resist
solder paste
3
occupied area
0.60
(3x)
Dimensions in mm
0.50 (3x)
0.60 (3x)
1.00
3.30
sot023
Fig 8. Reflow soldering footprint SOT23 (TO-236AB)
3.40
1.20 (2x)
solder lands
solder resist
occupied area
2
1
4.60 4.00 1.20
3
Dimensions in mm
2.80
preferred transport direction during soldering
4.50
sot023
Fig 9. Wave soldering footprint SOT23 (TO-236AB)
PMEG2010AEH_PMEG2010AET_3
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 28 March 2007
8 of 11
PMEG2010AEH; PMEG2010AET
NXP Semiconductors
1 A very low VF MEGA Schottky barrier rectifiers
12. Revision history
Table 10.
Revision history
Document ID
Release date
PMEG2010AEH_PMEG2010AET_3 20070328
Modifications:
Data sheet status
Change notice
Supersedes
Product data sheet
-
PMEG2010AEH_2
•
The format of this data sheet has been redesigned to comply with the new
identity guidelines of NXP Semiconductors.
•
•
•
•
•
•
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Type number PMEG2010AET added
Section 1.1 “General description”: amended
Table 1 “Product overview”: added
Table 7 “Thermal characteristics”: Table note 1 amended
Table 7 “Thermal characteristics”: Table note 4 added
Table 8 “Characteristics”: Cd diode capacitance conditions adapted
Figure 2: amended
Section 8 “Test information”: added
Section 13 “Legal information”: updated
PMEG2010AEH_2
20050526
Product data sheet
-
PMEG2010AEH_1
PMEG2010AEH_1
20050406
Product data sheet
-
-
PMEG2010AEH_PMEG2010AET_3
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 28 March 2007
9 of 11
NXP Semiconductors
PMEG2010AEH; PMEG2010AET
1 A very low VF MEGA Schottky barrier rectifiers
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
PMEG2010AEH_PMEG2010AET_3
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 28 March 2007
10 of 11
NXP Semiconductors
PMEG2010AEH; PMEG2010AET
1 A very low VF MEGA Schottky barrier rectifiers
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information. . . . . . . . . . . . . . . . . . . . . . 6
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 March 2007
Document identifier: PMEG2010AEH_PMEG2010AET_3