PMEG2010AEH; PMEG2010AET 1 A very low VF MEGA Schottky barrier rectifiers Rev. 03 — 28 March 2007 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration NXP JEITA PMEG2010AEH SOD123F - single PMEG2010AET SOT23 - single 1.2 Features n n n n Forward current: IF ≤ 1 A Reverse voltage: VR ≤ 20 V Very low forward voltage Small SMD plastic packages 1.3 Applications n n n n n Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF forward current Tsp ≤ 55 °C - - 1 A VR reverse voltage - - 20 V - 380 430 mV VF [1] forward voltage Pulse test: tp ≤ 300 µs; δ ≤ 0.02. IF = 1 A [1] PMEG2010AEH; PMEG2010AET NXP Semiconductors 1 A very low VF MEGA Schottky barrier rectifiers 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol SOD123F 1 cathode 2 anode [1] 1 1 2 2 sym001 SOT23 1 anode 2 not connected 3 cathode 3 1 1 [1] 3 2 2 n.c. 006aaa436 The marking bar indicates the cathode. 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PMEG2010AEH - plastic surface-mounted package; 2 leads SOD123F PMEG2010AET - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 5. Marking codes Type number Marking code[1] PMEG2010AEH AF PMEG2010AET *AX [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PMEG2010AEH_PMEG2010AET_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 28 March 2007 2 of 11 PMEG2010AEH; PMEG2010AET NXP Semiconductors 1 A very low VF MEGA Schottky barrier rectifiers 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VR reverse voltage IF forward current Tsp ≤ 55 °C IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 PMEG2010AEH PMEG2010AET IFSM non-repetitive peak forward current square wave; tp = 8 ms Ptot total power dissipation Tamb ≤ 25 °C PMEG2010AEH PMEG2010AET Min Max Unit - 20 V - 1 A - 7 A - 6 A - 9 A [1] - 375 mW [2] - 830 mW [1] - 280 mW [2] - 420 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Min Typ Max Unit [2] - - 330 K/W [3] - - 150 K/W [2] - - 440 K/W [3] - - 300 K/W PMEG2010AEH - - 60 K/W PMEG2010AET - - 120 K/W PMEG2010AEH PMEG2010AET Rth(j-sp) thermal resistance from junction to solder point [4] [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [4] Soldering point of cathode tab. PMEG2010AEH_PMEG2010AET_3 Product data sheet [1] © NXP B.V. 2007. All rights reserved. Rev. 03 — 28 March 2007 3 of 11 PMEG2010AEH; PMEG2010AET NXP Semiconductors 1 A very low VF MEGA Schottky barrier rectifiers 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol VF IR Cd [1] Parameter Conditions Min Typ Max Unit IF = 10 mA - 200 220 mV IF = 100 mA - 265 290 mV IF = 1 A - 380 430 mV VR = 5 V - 15 50 µA VR = 10 V - 20 80 µA VR = 20 V - 50 200 µA VR = 5 V; f = 1 MHz - 55 70 pF [1] forward voltage reverse current diode capacitance Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PMEG2010AEH_PMEG2010AET_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 28 March 2007 4 of 11 PMEG2010AEH; PMEG2010AET NXP Semiconductors 1 A very low VF MEGA Schottky barrier rectifiers mdb823 104 IR (µA) IF (mA) 006aab033 105 104 (1) 103 (2) 103 (1) 102 (2) (3) (4) 102 (3) 10 10 1 10−1 1 (4) 10−2 10−1 0 0.1 0.2 0.3 0.4 VF (V) 10−3 0.5 0 5 10 15 20 VR (V) (1) Tamb = 125 °C (1) Tamb = 125 °C (2) Tamb = 85 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (3) Tamb = 25 °C (4) Tamb = −40 °C (4) Tamb = −40 °C Fig 1. Forward current as a function of forward voltage; typical values Fig 2. Reverse current as a function of reverse voltage; typical values mdb824 200 Cd (pF) 150 100 50 0 0 5 10 15 VR (V) 20 f = 1 MHz; Tamb = 25 °C Fig 3. Diode capacitance as a function of reverse voltage; typical values PMEG2010AEH_PMEG2010AET_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 28 March 2007 5 of 11 PMEG2010AEH; PMEG2010AET NXP Semiconductors 1 A very low VF MEGA Schottky barrier rectifiers 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 4. Duty cycle definition 9. Package outline 1.7 1.5 1.2 1.0 3.0 2.8 1.1 0.9 1 3 0.55 0.35 3.6 3.4 0.45 0.15 2.5 1.4 2.1 1.2 2.7 2.5 1 2 2 0.25 0.10 0.70 0.55 Dimensions in mm 1.9 04-11-29 Fig 5. Package outline SOD123F 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 6. Package outline SOT23 (TO-236AB) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description 3000 10000 PMEG2010AEH SOD123F 4 mm pitch, 8 mm tape and reel -115 -135 PMEG2010AET SOT23 4 mm pitch, 8 mm tape and reel -215 -235 [1] For further information and the availability of packing methods, see Section 14. PMEG2010AEH_PMEG2010AET_3 Product data sheet Packing quantity © NXP B.V. 2007. All rights reserved. Rev. 03 — 28 March 2007 6 of 11 PMEG2010AEH; PMEG2010AET NXP Semiconductors 1 A very low VF MEGA Schottky barrier rectifiers 11. Soldering 4.4 4 2.9 1.6 solder lands solder resist 2.1 1.6 1.1 1.2 solder paste occupied area 1.1 (2×) Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 7. Reflow soldering footprint SOD123F PMEG2010AEH_PMEG2010AET_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 28 March 2007 7 of 11 PMEG2010AEH; PMEG2010AET NXP Semiconductors 1 A very low VF MEGA Schottky barrier rectifiers 2.90 2.50 0.85 2 1 solder lands 1.30 3.00 2.70 0.85 solder resist solder paste 3 occupied area 0.60 (3x) Dimensions in mm 0.50 (3x) 0.60 (3x) 1.00 3.30 sot023 Fig 8. Reflow soldering footprint SOT23 (TO-236AB) 3.40 1.20 (2x) solder lands solder resist occupied area 2 1 4.60 4.00 1.20 3 Dimensions in mm 2.80 preferred transport direction during soldering 4.50 sot023 Fig 9. Wave soldering footprint SOT23 (TO-236AB) PMEG2010AEH_PMEG2010AET_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 28 March 2007 8 of 11 PMEG2010AEH; PMEG2010AET NXP Semiconductors 1 A very low VF MEGA Schottky barrier rectifiers 12. Revision history Table 10. Revision history Document ID Release date PMEG2010AEH_PMEG2010AET_3 20070328 Modifications: Data sheet status Change notice Supersedes Product data sheet - PMEG2010AEH_2 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • • • Legal texts have been adapted to the new company name where appropriate. Type number PMEG2010AET added Section 1.1 “General description”: amended Table 1 “Product overview”: added Table 7 “Thermal characteristics”: Table note 1 amended Table 7 “Thermal characteristics”: Table note 4 added Table 8 “Characteristics”: Cd diode capacitance conditions adapted Figure 2: amended Section 8 “Test information”: added Section 13 “Legal information”: updated PMEG2010AEH_2 20050526 Product data sheet - PMEG2010AEH_1 PMEG2010AEH_1 20050406 Product data sheet - - PMEG2010AEH_PMEG2010AET_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 28 March 2007 9 of 11 NXP Semiconductors PMEG2010AEH; PMEG2010AET 1 A very low VF MEGA Schottky barrier rectifiers 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] PMEG2010AEH_PMEG2010AET_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 28 March 2007 10 of 11 NXP Semiconductors PMEG2010AEH; PMEG2010AET 1 A very low VF MEGA Schottky barrier rectifiers 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Packing information. . . . . . . . . . . . . . . . . . . . . . 6 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 28 March 2007 Document identifier: PMEG2010AEH_PMEG2010AET_3