Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM Ptot VCEsat ICsat tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time VBE = 0 V PINNING - SOT399 PIN 1 base 2 collector 3 emitter case isolated MAX. UNIT 4.5 0.7 1500 700 8 15 45 1.0 - V V A A W V A µs Ths ≤ 25 ˚C IC = 4.5 A; IB = 1.6 A f = 16 kHz ICsat = 4.5 A; f = 16kHz PIN CONFIGURATION DESCRIPTION TYP. SYMBOL c case b e 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V Ths ≤ 25 ˚C MIN. MAX. UNIT -65 - 1500 700 8 15 4 6 45 150 150 V V A A A A W ˚C ˚C TYP. MAX. UNIT THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W Rth j-a Junction to ambient in free air 35 - K/W July 1998 1 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65 % ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. - MAX. UNIT 2500 V - 22 - pF MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 700 - 10 - mA V 6 13 1.0 1.1 30 V V - TYP. MAX. UNIT 7 - MHz 125 - pF 6.5 0.7 - µs µs STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsus VCEsat VBEsat hFE PARAMETER Collector cut-off current CONDITIONS 1 VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C Emitter cut-off current VEB = 6.0 V; IC = 0 A Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 4.5 A; IB = 1.6 A Base-emitter saturation voltage IC = 4.5 A; IB = 2 A DC current gain IC = 100 mA; VCE = 5 V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS fT Transition frequency at f = 5 MHz IC = 0.1 A;VCE = 5 V CC ts tf Collector capacitance at f = 1MHz VCB = 10 V Switching times (16 kHz line deflection circuit) ICsat = 4.5 A;Lc 1 mH;Cfb = 4 nF IB(end) = 1.4 A; LB = 6 µH; -VBB = -4 V; -IBM = 2.25 A Turn-off storage time Turn-off fall time 1 Measured with half sine-wave voltage (curve tracer). July 1998 2 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AX ICsat + 50v 90 % 100-200R IC 10 % Horizontal tf Oscilloscope t ts IB IBend Vertical t 1R 100R 6V 30-60 Hz - IBM Fig.1. Test circuit for VCEOsust. Fig.4. Switching times definitions. IC / mA + 150 v nominal adjust for ICsat 1mH 250 200 LB IBend 100 D.U.T. BY228 12nF -VBB 0 VCE / V min VCEOsust Fig.2. Oscilloscope display for VCEOsust. TRANSISTOR IC Fig.5. Switching times test circuit. ICsat 100 h FE BU508AD DIODE t IBend IB 10 t 20us 26us 64us VCE 1 0.1 t Fig.3. Switching times waveforms. July 1998 1 IC/A 10 Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE 3 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AD VCESAT / V 1 BU508AX 10 Zth K/W bu508ax 0.9 0.8 0.5 1 0.2 0.7 0.1 0.6 0.05 0.1 0.5 0.02 0.4 0.3 PD 0.01 0.2 0.1 0 D= T 0.001 1.0E-07 0.1 1 IC / A 1E-03 tp T t 1.0E-01 1.0E+1 t/s Fig.10. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T BU508AD VBESAT / V 1.0E-05 10 Fig.7. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB 1.4 tp 0 120 Normalised Power Derating PD% with heatsink compound 110 100 90 1.2 80 70 IC = 6A 60 1 50 IC = 4.5A 40 IC = 3A 30 0.8 20 10 0 0.6 0 0 1 2 3 4 IB / A Fig.8. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC 20 40 60 80 Ths / C 100 120 140 Fig.11. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Ths) BU508AD VCESAT/V 10 1 IC = 6A IC = 4.5A IC = 3A 0.1 0.1 1 IB/A 10 Fig.9. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC July 1998 4 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor 100 BU508AX IC / A 100 IC / A = 0.01 = 0.01 ICM max ICM max tp = IC max 10 II 10 us II Ptot max 10 us Ptot max 1 1 100 us 100 us 1 ms I 1 ms I 0.1 0.1 10 ms 10 ms DC DC 0.01 0.01 1 10 1000 100 1 VCE / V 10 1000 100 VCE / V Fig.12. Forward bias safe operating area. Ths = 25˚C I Region of permissible DC operation. II Extension for repetitive pulse operation. Fig.13. Forward bias safe operating area. Ths = 25˚C I Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. July 1998 tp = IC max 10 NB: Mounted without heatsink compound and 30 ± 5 newton force on the centre of the envelope. 5 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AX MECHANICAL DATA Dimensions in mm 5.8 max 16.0 max Net Mass: 5.88 g 3.0 0.7 4.5 3.3 10.0 27 max 25 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 0.95 max 5.45 5.45 3.3 Fig.14. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 6 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AX DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 7 Rev 1.200