VISHAY SIA467EDJ

New Product
SiA467EDJ
www.vishay.com
Vishay Siliconix
P-Channel 12 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 12
RDS(on) () (Max.)
ID (A)a
0.0130 at VGS = - 4.5 V
- 31
0.0145 at VGS = - 3.7 V
- 30
0.0195 at VGS = - 2.5 V
- 26
0.0400 at VGS = - 1.8 V
-7
Qg (Typ.)
29 nC
PowerPAK SC-70-6L-Single
APPLICATIONS
1
D
• Portable Devices such as Smart Phones,
Tablet PCs and Mobile Computing
2
D
3
6
- Battery Switch
- Load Switch
- Power Management
G
D
5
S
D
2.05 mm
S
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK® SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg and UIS Tested
• Typ ESD Protection: 5000 V (HBM)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
S
G
Marking Code
2.05 mm
4
B1 X
Part # code
Ordering Information:
SiA467EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
XXX
D
Lot Traceability
and Date code
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 12
Gate-Source Voltage
VGS
±8
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
Continuous Source-Drain Diode Current
- 25
ID
- 13b, c
- 11b, c
Single Avalanche Current
Single Avalanche Energy
IDM
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 70 °C
TA = 25 °C
- 16
IS
- 2.9b, c
IAS
- 11
EAS
5.8
mJ
19
12
PD
W
3.5b, c
2.2b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
- 60
TC = 25 °C
Maximum Power Dissipation
V
- 31
TA = 70 °C
Pulsed Drain Current (t = 300 μs)
Unit
TJ, Tstg
- 50 to 150
Soldering Recommendations (Peak Temperature)d, e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
Typical
Maximum
t5s
RthJA
28
36
Steady State
RthJC
5.3
6.5
Unit
°C/W
Notes
a. TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S13-0107-Rev. A, 21-Jan-13
Document Number: 62816
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA467EDJ
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 μA
- 12
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
ID = - 250 μA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 μA
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward
Transconductancea
V
- 6.4
- 0.4
-1
VDS = 0 V, VGS = ± 8 V
±2
VDS = 0 V, VGS = ± 4.5 V
± 0.5
VDS = - 12 V, VGS = 0 V
-1
VDS = - 12 V, VGS = 0 V, TJ = 55 °C
VDS  - 5 V, VGS = - 4.5 V
RDS(on)
gfs
mV/°C
2.4
V
μA
- 10
- 10
A
VGS = - 4.5 V, ID = - 5 A
0.0105
0.0130
VGS = - 3.7 V, ID = - 5 A
0.0120
0.0145
VGS = - 2.5 V, ID = - 4 A
0.0155
0.0195
VGS = - 1.8 V, ID = - 2 A
0.0260
0.0400
VGS = - 6 V, ID = - 5 A
31

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2520
VDS = - 6 V, VGS = 0 V, f = 1 MHz
pF
545
VDS = - 6 V, VGS = - 8 V, ID = - 14 A
VDS = - 6 V, VGS = - 4.5 V, ID = - 14 A
48
72
29
44
4
VDD = - 6 V, RL = 0.6 
ID  - 10 A, VGEN = - 4.5 V, Rg = 1 
1.8
9
18
25
50
25
50
90
180
tf
50
100
td(on)
10
20
10
20
120
240
45
90
td(off)
nC
6.6
f = 1 MHz
td(on)
tr
570
VDD = - 6 V, RL = 0.6 
ID  - 10 A, VGEN = - 8 V, Rg = 1 
tr
td(off)
tf

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 16
- 60
IS = - 10 A, VGS = 0 V
IF = - 10 A, dI/dt = 100 A/μs, TJ = 25 °C
A
- 0.75
- 1.2
V
20
40
ns
7
15
nC
9
11
ns
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-0107-Rev. A, 21-Jan-13
Document Number: 62816
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA467EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-2
20.00
10-3
12.00
10-4
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
16.00
TJ = 25 °C
8.00
10-5
TJ = 150 °C
10-6
TJ = 25 °C
10-7
4.00
10-8
10-9
0.00
0
4
8
12
16
0
4
VGS - Gate-Source Voltage (V)
8
12
16
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-to-Source Voltage
20
60
VGS = 5 V thru 3 V
VGS = 2.5 V
16
ID - Drain Current (A)
ID - Drain Current (A)
50
40
VGS = 2 V
30
20
VGS = 1.5 V
10
12
8
TC = 25 °C
TC = 125 °C
4
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
1.0
1.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.060
2.0
4000
VGS = 1.8 V
3500
0.050
3000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.5
VDS - Drain-to-Source Voltage (V)
0.040
0.030
VGS = 2.5 V
0.020
Ciss
2500
2000
1500
Coss
1000
VGS = 3.7 V
0.010
Crss
500
VGS = 4.5 V
0.000
0
0
10
20
30
40
50
60
0
2
4
6
8
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
S13-0107-Rev. A, 21-Jan-13
10
12
Document Number: 62816
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA467EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.4
ID = 14 A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
8
VDS = 6 V
6
VDS = 3 V
4
VDS = 9.6 V
2
VGS = 4.5 V, 2.5 V
1.3
ID = 5 A
VGS = 3.7 V
1.2
VGS = 1.8 V
1.1
1.0
0.9
0
0.8
0
10
20
30
40
50
- 50
- 25
0
Gate Charge
50
75
100
125
150
On-Resistance vs. Junction Temperature
100
0.060
TJ = 150 °C
0.050
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
25
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
10
TJ = 25 °C
1
ID = 5 A
0.040
0.030
TJ = 125 °C
0.020
TJ = 25 °C
0.010
0.1
0.000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
VSD - Source-to-Drain Voltage (V)
0.7
25
0.6
20
Power (W)
VGS(th) (V)
30
0.5
ID = 250 μA
10
0.3
5
0.2
25
50
75
100
5
15
0.4
0
4
On-Resistance vs. Gate-to-Source Voltage
0.8
- 25
3
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
- 50
2
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
TJ - Temperature (°C)
Threshold Voltage
S13-0107-Rev. A, 21-Jan-13
Single Pulse Power, Junction-to-Ambient
Document Number: 62816
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA467EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by RDS(on)*
100 µs
ID - Drain Current (A)
10
1 ms
1
10 ms
100 ms
10 s
1s
0.1
DC
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
35
20
25
Power Dissipation (W)
ID - Drain Current (A)
30
20
15
10
15
10
5
5
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
TC - Case Temperature (°C)
150
Power Derating






* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-0107-Rev. A, 21-Jan-13
Document Number: 62816
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA467EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
0.1
10-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case



















Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62816.
S13-0107-Rev. A, 21-Jan-13
Document Number: 62816
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
www.vishay.com
11
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000