oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP4290J3BJ THRU TISP4395J3BJ *R BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxJ3BJ Overvoltage Protector Series Ion-Implanted Breakdown Region -Precise and Stable Voltage -Low Voltage Overshoot Under Surge SMB Package (Top View) Designed for Transformer Center Tap (Ground Return) Overvoltage Protection -Enables GR-1089-CORE Compliance -High Holding Current Allows Protection of Data Lines with d.c. Power Feed R T MDXXBGI Can be Used to Protect Rugged Modems Designed for Exposed Applications Exceeding TIA-968-A Device Symbol T VDRM Device Name V(BO) V V TISP4290J3BJ 220 290 TISP4350J3BJ 275 350 TISP4395J3BJ 320 395 R Rated for International Surge Wave Shapes Wave Shape Standard 2/10 GR-1089-CORE SD4XAp IPPSM A 1000 8/20 IEC 61000-4-5 800 10/160 TIA-968-A (FCC Part 68) 400 10/700 ITU-T K.20/21/45 350 10/560 TIA-968-A (FCC Part 68) 250 10/1000 GR-1089-CORE 200 ............................................ UL Recognized Components Description The range of TISP4xxxJ3BJ devices are designed to limit overvoltages on telecom lines. The TISP4xxxJ3BJ is primarily designed to address GR-1089-CORE compliance on data transmission lines with d.c. power feeding. When overvoltage protection is applied to transformer coupled lines from the transformer center tap to ground, the total ground return current can be 200 A, 10/1000 and 1000 A, 2/10. The high 150 mA holding current is set above common d.c. feed system levels to allow the TISP4xxxJ3BJ to reset following a disturbance. These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above VDRM are limited and will not exceed the breakover voltage, V(BO) , level. If sufficient current flows due to the overvoltage, the device switches into a low voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the holding current, IH , level the devices switches off and restores normal system operation. How to Order Device Package Carrier TISP4xxxJ3BJ SMB (DO-214AA) Embossed Tape Reeled Insert xxx value corresponding to device name. *RoHS Directive 2002/95/EC Jan 27 2003 including Annex JULY 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. For Standard Termination Finish Order As TISP4xxxJ3BJR For Lead Free Termination Finish Order As Marking Code Std. Qty. TISP4xxxJ3BJR-S 4xxxJ3 3000 TISP4xxxJ3BJ Overvoltage Protector Series Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Symbol '4290 Repetitive peak off-state voltage '4350 Value Unit ±220 VDRM V ±275 '4395 ±320 Non-repetitive peak on-state pulse current (see Notes 1 and 2) 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 1000 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 800 10/160 (TIA-968-A (Replaces FCC Part 68), 10/160 voltage wave shape) 4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 400 370 IPPSM 5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 350 5/320 (TIA-968-A (Replaces FCC Part 68), 9/720 voltage wave shape, single) 350 10/560 (TIA-968-A (Replaces FCC Part 68), 10/560 voltage wave shape) 250 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 200 A Non-repetitive peak on-state current (see Notes 1 and 2) 80 ITSM 50 Hz, 1 cycle A 100 60 Hz, 1 cycle Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 50 A Junction temperature Storage temperature range diT/dt 800 A/µs TJ -40 to +150 °C Tstg -65 to +150 °C NOTES: 1. Initially, the device must be in thermal equilibrium with TJ = 25 °C. 2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its initial conditions. Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter IDRM V(BO) Repetitive peak offstate current AC breakover voltage Test Conditions Min VD = ±V DRM dv/dt = ±250 V/ms, RSOURCE = 300 dv/dt ≤ ±1000 V/µs, Linear voltage ramp, V(BO) Ramp breakover Maximum ramp value = ±500 V voltage di/dt = ±20 A/µs, Linear current ramp, Maximum ramp value = ±10 A V(BO) I(BO) IH dv/dt Impulse breakover 2/10 wave shape, IPP = ±1000 A, RS = 2.5 Ω, voltage (see Note 3) Breakover current dv/dt = ±250 V/ms, Holding current IT = ±5 A, di/dt = +/-30 mA/ms Critical rate of rise of off-state voltage Typ Max TA = 25 °C ±5 TA = 85 °C ±10 '4290 ±290 '4350 ±350 '4395 ±395 '4290 ±303 '4350 ±364 '4395 ±409 '4290 ±320 '4350 ±386 '4395 ±434 RSOURCE = 300 Ω µA V V V ±600 Linear voltage ramp, Maximum ramp value < 0.85 VDRM Unit mA ±150 mA ±5 kV/µs JULY 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxJ3BJ Overvoltage Protector Series Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter ID Coff NOTE Test Conditions Off-state current Off-state capacitance VD = ±50 V Min Typ TA = 85 °C Max Unit ±10 µA f = 1 MHz, Vd = 1 V rms, VD = 0 105 125 f = 1 MHz, Vd = 1 V rms, VD = -1 V 95 115 f = 1 MHz, Vd = 1 V rms, VD = -2 V 90 105 f = 1 MHz, Vd = 1 V rms, VD = -50 V 42 50 f = 1 MHz, Vd = 1 V rms, VD = -100 V 35 40 pF 3: Dynamic voltage measurements should be made with an oscilloscope with limited band width (20 MHz) to avoid high frequency noise. Thermal Characteristics Parameter RθJA NOTE Junction to free air thermal resistance Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 °C, (see Note 4) Min Typ Max Unit 90 °C/W 4: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. JULY 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxJ3BJ Overvoltage Protector Series Parameter Measurement Information +i Quadrant I IPPSM Switching Characteristic ITSM IT V(BO) VT I(BO) IH V DRM -v VD IDRM ID VD ID IDRM V DRM +v IH I(BO) V(BO) VT IT ITSM Quadrant III Switching Characteristic IPPSM -i PM4XAG Figure 1. Voltage-Current Characteristic for Terminals T and R All Measurements are Referenced to Terminal T JULY 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxJ3BJ Overvoltage Protector Series Typical Characteristics OFF-STATE CURRENT vs JUNCTION TEMPERATURE TC4JAG 100 1.15 NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4JAF VD = ±50 V Normalized Breakover Voltage |I D| - Off-State Current - µA 10 1 0.1 0.0 01 1.10 1.05 1.00 0.95 0.90 0.001 -25 0 25 50 75 100 TJ - Junction Temperature - °C 125 -25 150 Figure 2. 2.0 TC4JAA NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4JAD TA = 25 °C tW = 100 µs 1.5 Normalized Holding Current IT - On-State Current - A 200 150 150 Figure 3. ON-STATE CURRENT vs ON-STATE VOLTAGE 400 300 0 25 50 75 100 125 TJ - Junction Temperature - °C 100 70 50 40 30 20 15 10 7 5 4 3 1.0 0.9 0.8 0.7 0.6 0.5 2 1.5 1 0.7 0.4 1 1.5 2 3 4 5 7 V T - On-State Voltage - V 10 15 Figure 4. JULY 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. -25 0 25 50 75 100 125 TJ - Junction Temperature - °C Figure 5. 150 TISP4xxxJ3BJ Overvoltage Protector Series Typical Characteristics DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE TC4JABB 1 TC4JAE 90 0.9 TJ = 25 °C V d = 1 Vrms 80 0.7 0.6 70 0.5 C = Coff(-2 V) - Coff(-50 V) 0.4 60 0.3 50 0.2 0.5 1 2 3 5 10 20 30 50 V D - Off-state Voltage - V 40 50 100150 60 70 80 90100 150 200 250 300 350 VDRM - Repetitive Peak Off-State Voltage - V Figure 6. Figure 7. NORMALIZED CAPACITANCE ASYMMETRY vs OFF-STATE VOLTAGE TC4JCC 2.5 Vd = 10 mV rms, 1 MHz Normalized Capacitance Asymmetry - % Capacitance Normalized to VD = 0 0.8 2.0 1.5 1.0 Vd = 1 V rms, 1 MHz 0.5 0.0 0.5 0.7 1 2 3 4 5 7 10 20 VD — Off-State Voltage — V Figure 8. 30 4050 JULY 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxJ3BJ Overvoltage Protector Series Rating and Thermal Characteristics V DRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE TI4JAA 40 1.00 V GEN = 600 Vrms, 50/60 Hz RGEN = 1.4*V GEN /ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 °C 30 20 0.99 0.98 15 Derating Factor ITSM(t) - Non-Repetitive Peak On-State Current - A NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION 10 9 8 7 6 5 0.97 0.96 0.95 4 0.94 3 2 0.1 1 1 10 100 t - Current Duration - s 1000 Figure 9. JULY 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 TAMIN - Minimum Ambient Temperature - °C Figure 10. TISP4xxxJ3BJ Overvoltage Protector Series Applications Circuits Protection Polarity Bridge Ring Detector F1 R High current Fuse Relay C1 R1 C2 D1 D2 Th1 D3 D4 D5 D6 Hook Switch C3 DC Sink T TISP 4350J3BJ R2 T1 Signal D7 OC1 F1a Isolation Barrier AI4MMABB Tx T F1b R TISP4350J3BJ F2a d.c. feed Rx T F2b R TISP4350J3BJ F1 & F2 = B1250T AI4MMAB “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. JULY 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.