Ordering number : EN6590B CPH5506 Bipolar Transistor (–)30V, (–)5A, Low VCE(sat) Complementary Dual CPH5 http://onsemi.com Applications • Relay drivers, Lamp drivers, Motor drivers Features • • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting The CPH5506 consists of two chips encapsulated in a package which are equivalent to the CPH3115 and the CPH3215, respectively Ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height) Specifications ( ): PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--30)40 Collector-to-Emitter Voltage VCEO (--)30 V V Emitter-to-Base Voltage VEBO (--)5 V Collector Current IC (--)1.5 A Collector Current (Pulse) ICP Base Current IB Collector Dissipation PC Total Power Dissipation Junction Temperature PT Tj Storage Temperature Tstg (--)5 A (--)300 mA Mounted on a ceramic board (600mm2×0.8mm) 0.9 W Mounted on a ceramic board (600mm2×0.8mm) 1.2 W 150 °C --55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Product & Package Information unit : mm (typ) 7017A-009 • Package : CPH5 • JEITA, JEDEC : SC-74A, SOT-25 • Minimum Packing Quantity : 3,000 pcs./reel 5 4 CPH5506-TL-E 0.15 2.9 3 Packing Type : TL Marking 0.9 1 0.95 LOT No. EF 0.05 1.6 0.2 0.6 2.8 0.2 0.6 Package Dimensions TL 2 0.4 1 : Collector (NPN TR) 2 : Collector (PNP TR) 3 : Base (PNP TR) 4 : Emitter Common 5 : Base (NPN TR) Electrical Connection B1 EC B2 CPH5 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 March, 2014 C1 C2 31214HK/62012TKIM/71400TSIM TA-2880 No.6590-1/6 CPH5506 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(--)30V, IE=0A (--)0.1 mA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 mA DC Current Gain hFE VCE=(--)2V, IC=(--)100mA Gain-Bandwidth Product fT Cob VCE=(--)10V, IC=(--)300mA VCB=(--)10V, f=1MHz (450)500 Output Capacitance Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)750mA, IB=(--)15mA (--250)150 (--375)225 Base-to-Emitter Saturation Voltage IC=(--)750mA, IB=(--)15mA IC=(--)10mA, IE=0A (--)0.85 (--)1.2 Collector-to-Emitter Breakdown Voltage VBE(sat) V(BR)CBO V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-On Time Storage Time ton tstg Fall Time tf Collector-to-Base Breakdown Voltage 200 560 MHz (9)8 pF mV V (--30)40 V IC=(--)1mA, RBE=∞ (--)30 V IE=(--)10mA, IC=0A (--)5 V 35 See specified Test Circuit. ns (115)205 ns 30 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit IB1 PW=20ms D.C. 1% INPUT 50Ω IB2 VR OUTPUT RB RL 16Ω + 100mF VBE= --5V + 470mF VCC=12V 20IB1= --20IB2=IC=750mA For PNP, the polarity is reversed. Ordering Information Device CPH5506-TL-E Package Shipping memo CPH5 3,000pcs./reel Pb Free No.6590-2/6 CPH5506 [PNP] --20mA --1.2 --8mA --1.0 --6mA --4mA --0.8 --0.6 --2mA --0.4 --0.2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 IC -- VBE °C 25°C --25°C --0.6 0 --0.2 --0.4 --0.6 --0.8 --1.0 hFE -- IC [PNP] 25°C --25°C 5 3 2 0.3 0.4 0.5 0.6 0.7 IB=0mA 0.8 Collector-to-Emitter Voltage, VCE -- V 0.9 1.0 IT01674 [NPN] VCE=2V 1.0 0.8 0.6 0.4 0 0.2 0.4 0.6 3 2 0.8 Base-to-Emitter Voltage, VBE -- V hFE -- IC 1.0 1.2 IT01676 [NPN] VCE=2V Ta=75°C 25°C --25°C 100 7 5 3 2 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 --1.0 f T -- IC 3 2 10 0.01 3 IT01677 [PNP] VCE= --10V 2 1000 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 f T -- IC 3 Gain Bandwidth Product, f T -- MHz Gain Bandwidth Product, f T -- MHz 0.2 1.2 5 7 1.0 2 3 IT01678 [NPN] VCE=10V 2 1000 7 5 3 2 100 7 5 3 2 --0.01 0.1 IC -- VBE 7 100 10 --0.01 0 1000 DC Current Gain, hFE 2 0.4 IT01675 Ta=75°C 3 2mA 0.6 0 --1.2 VCE= --2V 7 5 4mA 0.8 0.2 Base-to-Emitter Voltage, VBE -- V 1000 6mA 1.0 1.6 Collector Current, IC -- A --0.8 0 1.2 10mA 8mA 1.4 Ta=7 5 Collector Current, IC -- A [PNP] --1.0 --0.2 1.4 IT01673 --1.2 --0.4 1.6 0 --0.9 --1.0 VCE= --2V --1.4 20mA 0.2 IB=0mA Collector-to-Emitter Voltage, VCE -- V --1.6 DC Current Gain, hFE --10mA A 30m 40mA C 25°C --25°C --1.4 [NPN] Ta=75 ° Collector Current, IC -- A --1.6 1.8 Collector Current, IC -- A --50mA --40mA --30mA --1.8 IC -- VCE 2.0 50m A IC -- VCE --2.0 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 --1.0 2 IT01679 7 5 3 2 100 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 2 1.0 IT01680 No.6590-3/6 CPH5506 Cob -- VCB 100 [PNP] f=1MHz 7 2 10 7 5 3 2 10 7 5 3 3 2 3 5 7 --1.0 2 3 5 7 --10 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC --1.0 IT01681 [PNP] --0.1 7 3 2 2 3 5 °C 25 7 --0.1 2 3 5 Collector Current, IC -- A 7 --1.0 VCE(sat) -- IC 2 IT01683 [PNP] 3 2 --0.1 2 --0.01 --0.01 C ° Ta= --25 2 3 5 7 --0.1 C 25° 2 3 5 Collector Current, IC -- A VBE(sat) -- IC --10 7 --1.0 2 IT01685 [PNP] 2 Ta= --25°C 75°C 5 25°C 3 2 --0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 VCE(sat) -- IC 3 IT01687 2 3 5 IT01682 [NPN] IC / IB=20 2 0.1 7 5 3 C 75° Ta= °C --25 2 2 3 5 °C 25 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 VCE(sat) -- IC 2 3 IT01684 [NPN] IC / IB=50 5 3 2 0.1 7 5 C 75° 3 2 3 5 7 °C 25 5°C 2 Ta= -- 2 0.1 2 3 5 Collector Current, IC -- A 7 VBE(sat) -- IC 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 7 5 7 10 1.0 2 3 IT01686 [NPN] IC / IB=50 7 5 --1.0 3 3 0.01 0.01 3 IC / IB=50 7 2 7 5 5 7 1.0 1.0 IC / IB=50 7 75°C 5 Collector-to-Base Voltage, VCB -- V 5 0.01 0.01 3 --1.0 7 3 1.0 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 C 75° Ta= °C --25 2 7 3 5 2 0.1 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 5 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 IC / IB=20 7 3 f=1MHz 5 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 3 --0.01 --0.01 [NPN] 7 5 2 --0.1 Cob -- VCB 100 5 3 2 1.0 7 Ta= --25°C 75°C 5 25°C 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 IT01688 No.6590-4/6 CPH5506 ASO ICP=5A Collector Current, IC -- A IC=1.5A 2 DC 1.0 7 5 3 2 0.1 7 5 10 1 op 00m er s ati on ms Ta=25°C Single pulse Mounted on a ceramic board(600mm2×0.8mm) For PNP, minus sign is omitted 3 2 0.1 2 1.0 Collector Dissipation, PC(TR2) -- W s 3 5 7 1.0 2 3 5 7 10 2 3 PC -- Ta 1.4 10ms 1m [PNP / NPN] 1.2 s 0m s 10 0m 50 3 0.01 [PNP / NPN] Collector Dissipation, PC -- W 10 7 5 5 7 100 IT02363 Collector-to-Emitter Voltage, VCE -- V PC(TR2) -- PC(TR1) [PNP / NPN] 1.0 0.9 To t 0.8 1u al nit 0.6 0.4 Di ss ip ati on 0.2 0 Mounted on a ceramic board(600mm2×0.8mm) 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02364 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 Mounted on a ceramic board(600mm2×0.8mm) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector Dissipation, PC(TR1) -- W 0.9 1.0 IT02365 No.6590-5/6 CPH5506 Outline Drawing CPH5506-TL-E Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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