ON BC847CDW1T1G Dual general purpose transistor Datasheet

BC846BDW1, BC847BDW1,
BC848CDW1
Dual General Purpose
Transistors
NPN Duals
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These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
SOT−363/SC−88
CASE 419B
STYLE 1
• S and NSV Prefixes for Automotive and Other Applications
•
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
Symbol
BC846
BC847
BC848
Unit
Collector −Emitter Voltage
VCEO
65
45
30
V
Collector −Base Voltage
VCBO
80
50
30
V
Emitter −Base Voltage
VEBO
6.0
6.0
5.0
V
IC
100
100
100
mAdc
Collector Current −
Continuous
(2)
Q1
MAXIMUM RATINGS
Rating
(3)
Q2
(4)
(5)
Characteristic
Total Device Dissipation
Per Device
FR− 5 Board (Note 1)
TA = 25°C
Derate Above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
Range
Symbol
Max
Unit
PD
380
250
mW
mW
(6)
MARKING DIAGRAM
6
1x MG
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
(1)
1
1x
x
M
G
= Specific Device Code
= B, F, G, L
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
3.0
RqJA
TJ, Tstg
mW/°C
°C/W
328
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
°C
−55 to +150
1. FR−5 = 1.0 x 0.75 x 0.062 in
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
August, 2016 − Rev. 11
1
Publication Order Number:
BC846BDW1T1/D
BC846BDW1, BC847BDW1, BC848CDW1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC846
BC847
BC848
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846
BC847
BC848
V(BR)CES
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846
BC847
BC848
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846
BC847
BC848
V(BR)EBO
V
65
45
30
−
−
−
V
80
50
30
−
−
−
−
−
−
V
80
50
30
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
−
−
−
−
−
−
−
−
−
V
6.0
6.0
5.0
−
−
−
−
−
−
−
−
−
−
15
5.0
ICBO
nA
mA
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846B, BC847B
BC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V)
BC846B, BC847B
BC847C, BC848C
Collector −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)
Base −Emitter Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
VBE(on)
−
−
−
150
270
−
−
200
420
290
520
450
800
−
−
−
−
0.25
0.6
−
−
0.7
0.9
−
−
580
−
660
−
700
770
100
−
−
−
−
4.5
−
−
10
V
V
mV
SMALL− SIGNAL CHARACTERISTICS
fT
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
MHz
Cobo
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
pF
NF
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC846BDW1
600
600
VCE = 10 V
150°C
400
25°C
300
200
−55°C
100
0
0.001
VCE(sat), COLL−EMITT SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
500
0.01
0.1
500
150°C
400
25°C
300
200
−55°C
100
0
0.001
1
Figure 1. DC Current Gain at VCE = 5 V
Figure 2. DC Current Gain at VCE = 10 V
IC/IB = 10
0.20
0.15
150°C
0.10
25°C
0.05
−55°C
0.00
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC/IB = 20
0.25
0.2
0.15
25°C
0.1
0.05
0.80
25°C
0.70
0.60
150°C
0.50
0.40
0.30
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
IC/IB = 10
−55°C
150°C
−55°C
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. VCE(sat) at IC/IB = 20
1.10
0.90
1
0.3
Figure 3. VCE(sat) at IC/IB = 10
0.20
0.0001
0.1
IC, COLLECTOR CURRENT (A)
0.25
1.00
0.01
IC, COLLECTOR CURRENT (A)
VCE(sat), COLL−EMITT SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE = 5 V
1.10
1.00
IC/IB = 20
0.90
0.80
0.70
−55°C
25°C
0.60
0.50
0.40
150°C
0.30
0.20
0.0001
Figure 5. VBE(sat) at IC/IB = 10
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 6. VBE(sat) at IC/IB = 20
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0.1
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC846BDW1
1000
VCE = 5 V
1.10
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT
VBE(on), BASE−EMITTER VOLTAGE
(V)
1.20
1.00
0.90
−55°C
0.80
25°C
0.70
0.60
150°C
0.50
0.40
0.30
0.20
0.0001
0.001
0.01
0.1
10
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 7. VBE(on) at VCE = 5 V
Figure 8. Current − Gain − Bandwidth Product
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TA = 25°C
Cib
C, CAPACITANCE (pF)
100
IC, COLLECTOR CURRENT (A)
10
Cob
1
1
10
100
2
1.6
TA = 25°C
IC =
10 mA
IC =
20 mA
IC =
50 mA
IC =
100 mA
1.2
0.8
0.4
0
0.01
0.1
1
10
VR, REVERSE VOLTAGE (V)
IB, BASE CURRENT (mA)
Figure 9. Capacitances
Figure 10. Collector Saturation Region
qVB, TEMPERATURE COEFFICIENT
(mV/°C)
0.1
VCE = 10 V
TA = 25°C
−0.2
VCE = 5 V
−0.6
−1
−1.4
qVB, for VBE
−1.8
−55°C to 150°C
−2.2
−2.6
−3
0.1
1
10
IB, BASE CURRENT (mA)
100
Figure 11. Base−Emitter Temperature Coefficient
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100
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC847BDW1
hFE, DC CURRENT GAIN
150°C
500
400
25°C
300
−55°C
200
100
0
0.0001
VCE(sat), COLL−EMITT SATURATION VOLTAGE (V)
600
VCE = 5 V
0.25
0.001
0.01
0.1
150°C
500
400
25°C
300
−55°C
200
100
0.001
Figure 12. DC Current Gain at VCE = 5 V
Figure 13. DC Current Gain at VCE = 10 V
0.15
0.10
25°C
150°C
0.05
−55°C
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
IC/IB = 20
0.25
0.20
0.15
25°C
0.10
0.05
−55°C
0.80
25°C
0.60
150°C
0.40
0.20
0.1
IC, COLLECTOR CURRENT (A)
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
1.00
0.01
150°C
−55°C
0.00
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
Figure 15. VCE at IC/IB = 20
IC/IB = 10
0.001
1
0.30
Figure 14. VCE at IC/IB = 10
0.00
0.0001
0.1
IC, COLLECTOR CURRENT (A)
0.20
1.20
0.01
IC, COLLECTOR CURRENT (A)
IC/IB = 10
0.00
0.0001
VCE = 10 V
0
0.0001
1
VCE(sat), COLL−EMITT SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
600
1.20
IC/IB = 20
1.00
0.80
−55°C
25°C
0.60
0.40
150°C
0.20
0.00
0.0001
Figure 16. VBE(sat) at IC/IB = 10
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 17. VBE(sat) at IC/IB = 20
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0.1
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC847BDW1
1.10
1000
VCE = 5 V
1.00
0.90
−55°C
0.80
0.70
100
25°C
0.60
0.50
150°C
0.40
0.30
0.20
0.0001
VCE = 10 V
TA = 25°C
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT
VBE(on), BASE−EMITTER VOLTAGE
(V)
1.20
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
10
0.1
2
TA = 25°C
VCE, COLLECTOR−EMITTER VOLTAGE (V)
C, CAPACITANCE (pF)
100
Figure 19. Current − Gain − Bandwidth
Product
Cib
Cob
1
10
100
TA = 25°C
1.6
IC =
10 mA
1.2
IC =
20 mA
IC =
50 mA
IC =
100 mA
0.8
0.4
0
0.01
0.1
1
10
VR, REVERSE VOLTAGE (V)
IB, BASE CURRENT (mA)
Figure 20. Capacitances
Figure 21. Collector Saturation Region
qVB, TEMPERATURE COEFFICIENT
(mV/°C)
1
0.1
10
IC, COLLECTOR CURRENT (mA)
Figure 18. VBE(on) at VCE = 5 V
10
1
VCE = 5 V
−0.2
−0.6
−1
qVB, for VBE
−1.4
−55°C to 150°C
−1.8
−2.2
−2.6
−3
0.1
1
10
100
IB, BASE CURRENT (mA)
Figure 22. Base−Emitter Temperature Coefficient
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100
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC848CDW1
1000
800
700
600
25°C
500
400
−55°C
300
200
100
0.001
0.01
0.1
800
700
25°C
600
500
400
−55°C
300
200
0
0.0001
1
0.001
Figure 23. DC Current Gain at VCE = 5 V
Figure 24. DC Current Gain at VCE = 10 V
IC/IB = 10
0.14
0.12
0.10
150°C
0.08
25°C
0.06
0.04
−55°C
0.02
0.00
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
0.30
0.25
0.20
0.15
25°C
0.10
0.05
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
IC/IB = 10
0.9
−55°C
25°C
0.6
0.5
0.4
150°C
0.3
0.2
0.0001
0.001
0.01
150°C
−55°C
0.00
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 26. VCE at IC/IB = 20
1.1
0.7
1
IC/IB = 20
Figure 25. VCE at IC/IB = 10
0.8
0.1
IC, COLLECTOR CURRENT (A)
0.16
1.0
0.01
IC, COLLECTOR CURRENT (A)
VCE(sat), COLL−EMITT SATURATION VOLTAGE (V)
VCE(sat), COLL−EMITT SATURATION VOLTAGE (V)
0.18
VCE = 10 V
100
0
0.0001
0.20
150°C
900
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
1000
VCE = 5 V
150°C
900
0.1
IC, COLLECTOR CURRENT (A)
1.2
IC/IB = 20
1.0
0.8
−55°C
25°C
0.6
0.4
150°C
0.2
0.0
0.0001
Figure 27. VBE(sat) at IC/IB = 10
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 28. VBE(sat) at IC/IB = 20
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0.1
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC848CDW1
1000
VCE = 5 V
0.9
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT
VBE(on), BASE−EMITTER VOLTAGE
(V)
1.0
−55°C
0.8
25°C
0.7
0.6
0.5
0.4
150°C
0.3
0.2
0.1
0.0
0.0001
0.001
0.01
0.1
100
10
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (mA)
Figure 29. VBE(on) at VCE = 5 V
Figure 30. Current − Gain − Bandwidth
Product
2
TA = 25°C
C, CAPACITANCE (pF)
Cib
Cob
1
10
100
IC =
1.6 10 mA
TA = 25°C
IC =
20 mA
1.2
IC =
50 mA
IC =
100 mA
0.8
0.4
0
0.01
0.1
1
10
VR, REVERSE VOLTAGE (V)
IB, BASE CURRENT (mA)
Figure 31. Capacitances
Figure 32. Collector Saturation Region
qVB, TEMPERATURE COEFFICIENT
(mV/°C)
0.1
VCE, COLLECTOR−EMITTER VOLTAGE (V)
10
1
VCE = 10 V
TA = 25°C
VCE = 5 V
−0.2
−0.6
−1
−1.4
qVB, for VBE
−1.8
−55°C to 150°C
−2.2
−2.6
−3
0.1
1
10
IB, BASE CURRENT (mA)
100
Figure 33. Base−Emitter Temperature Coefficient
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100
BC846BDW1, BC847BDW1, BC848CDW1
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
ZqJA(t) = r(t) RqJA
RqJA = 3285C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
P(pk)
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.001
0
1.0
10
100
t, TIME (ms)
1.0k
10k
100k
1.0M
Figure 34. Thermal Response
The safe operating area curves indicate IC−VCE limits
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
The data of Figure 35 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided TJ(pk) ≤
150°C. T J(pk) may be calculated from the data in
Figure 34. At high case or ambient temperatures,
thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by the
secondary breakdown.
-200
IC, COLLECTOR CURRENT (mA)
1s
3 ms
-100
-50
-10
-5.0
-2.0
-1.0
TA = 25°C
TJ = 25°C
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0
-10
-30 -45 -65 -100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 35. Active Region Safe Operating Area
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BC846BDW1, BC847BDW1, BC848CDW1
ORDERING INFORMATION
Markings
Package
Shipping†
BC846BDW1T1G
1B
SOT−363
(Pb−Free)
3,000 / Tape & Reel
SBC846BDW1T1G*
1B
SOT−363
(Pb−Free)
3,000 / Tape & Reel
BC847BDW1T1G
1F
SOT−363
(Pb−Free)
3,000 / Tape & Reel
SBC847BDW1T1G*
1F
SOT−363
(Pb−Free)
3,000 / Tape & Reel
BC847BDW1T3G
1F
SOT−363
(Pb−Free)
10,000 / Tape & Reel
SBC847BDW1T3G*
1F
SOT−363
(Pb−Free)
10,000 / Tape & Reel
NSVBC847BDW1T2G*
1F
SOT−363
(Pb−Free)
10,000 / Tape & Reel
BC847CDW1T1G
1G
SOT−363
(Pb−Free)
3,000 / Tape & Reel
SBC847CDW1T1G*
1G
SOT−363
(Pb−Free)
3,000 / Tape & Reel
BC848CDW1T1G
1L
SOT−363
(Pb−Free)
3,000 / Tape & Reel
NSVBC848CDW1T1G*
1L
SOT−363
(Pb−Free)
3,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.
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BC846BDW1, BC847BDW1, BC848CDW1
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H D
D
A
D
6
5
GAGE
PLANE
4
2
L
L2
E1
E
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
H
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
e
B
6X
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
b
ddd
TOP VIEW
M
A2
C A-B D
DETAIL A
A
6X
ccc C
A1
SIDE VIEW
C
SEATING
PLANE
c
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
END VIEW
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
RECOMMENDED
SOLDERING FOOTPRINT*
6X
6X
0.30
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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