Elpida EBD25RB4ALFB-7A 256mb registered ddr sdram dimm Datasheet

DATA SHEET
256MB Registered DDR SDRAM DIMM
EBD25RB4ALFB (32M words × 72 bits, 1 Bank)
Description
Features
The EBD25RB4ALFB is a 32M × 72 × 1 bank Double
Data Rate (DDR) SDRAM Module, mounted 18 pieces
of 128M bits DDR SDRAM (EDD1204ALTA) sealed in
TSOP package, 1 piece of PLL clock driver, 2 pieces of
register driver and 1 piece of serial EEPROM (2k bits
EEPROM) for Presence Detect (PD). Read and write
operations are performed at the cross points of the
CLK and the /CLK. This high-speed data transfer is
realized by the 2-bit prefetch-pipelined architecture.
Data strobe (DQS) both for read and write are available
for high speed and reliable data bus design. By setting
extended mode register, the on-chip Delay Locked
Loop (DLL) can be set enable or disable. An outline of
the products is 184-pin socket type package (dual lead
out). Therefore, it makes high density mounting
possible without surface mount technology. It provides
common data inputs and outputs.
Decoupling
capacitors are mounted beside each TSOP on the
module board.
• 184-pin socket type dual in line memory module
(DIMM)
 Outline: 133.35mm (Length) × 30.48mm (Height) ×
4.00mm (Thickness)
 Lead pitch: 1.27mm
• 2.5V power supply (VDD/VDDQ)
• SSTL-2 interface for all inputs and outputs
• Clock frequency: 133MHz/100MHz (max.)
• Data inputs and outputs are synchronized with DQS
• 4 banks can operate simultaneously and
independently (Component)
• Burst read/write operation
• Programmable burst length: 2, 4, 8
 Burst read stop capability
• Programmable burst sequence
 Sequential
 Interleave
• Start addressing capability
 Even and Odd
• Programmable /CAS latency (CL): 2, 2.5
• 4096 refresh cycles: 15.6µs (4096/64ms)
• 2 variations of refresh
 Auto refresh
 Self refresh
Document No. E0236E10 (Ver. 1.0)
Date Published November 2001 (K) Japan
URL: http://www.elpida.com
C
Elpida Memory, Inc. 2001
EBD25RB4ALFB
Ordering Information
Part number
Clock frequency
MHz (max.)
/CAS latency
Package
Contact pad
Mounted devices
EBD25RB4ALFB-7A
EBD25RB4ALFB-75
EBD25RB4ALFB-1A
133
133
100
2.0
2.5
2.0
184-pin DIMM
Gold
EDD1204ALTA
Pin Configurations
Front side
1 pin
52 pin 53 pin
93 pin
92 pin
144 pin 145 pin 184 pin
Back side
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
1
VREF
47
DQS8
93
VSS
139
VSS
2
DQ0
48
A0
94
DQ4
140
DM8/DQS17
3
VSS
49
CB2
95
DQ5
141
A10
4
DQ1
50
VSS
96
VDDQ
142
CB6
5
DQS0
51
CB3
97
DM0/DQS9
143
VDDQ
6
DQ2
52
BA1
98
DQ6
144
CB7
7
VDD
53
DQ32
99
DQ7
145
VSS
8
DQ3
54
VDDQ
100
VSS
146
DQ36
9
NC
55
DQ33
101
NC
147
DQ37
10
/RESET
56
DQS4
102
NC
148
VDD
11
VSS
57
DQ34
103
NC
149
DM4/DQS13
12
DQ8
58
VSS
104
VDDQ
150
DQ38
13
DQ9
59
BA0
105
DQ12
151
DQ39
14
DQS1
60
DQ35
106
DQ13
152
VSS
15
VDDQ
61
DQ40
107
DM1/DQS10
153
DQ44
16
NC
62
VDDQ
108
VDD
154
/RAS
17
NC
63
/WE
109
DQ14
155
DQ45
18
VSS
64
DQ41
110
DQ15
156
VDDQ
19
DQ10
65
/CAS
111
NC
157
/CS0
20
DQ11
66
VSS
112
VDDQ
158
NC
21
CKE0
67
DQS5
113
NC
159
DM5/DQS14
22
VDDQ
68
DQ42
114
DQ20
160
VSS
23
DQ16
69
DQ43
115
NC
161
DQ46
24
DQ17
70
VDD
116
VSS
162
DQ47
25
DQS2
71
NC
117
DQ21
163
NC
26
VSS
72
DQ48
118
A11
164
VDDQ
27
A9
73
DQ49
119
DM2/DQS11
165
DQ52
28
DQ18
74
VSS
120
VDD
166
DQ53
29
A7
75
NC
121
DQ22
167
NC
Data Sheet . E0236E10 (Ver. 1.0)
2
EBD25RB4ALFB
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
30
VDDQ
76
NC
122
A8
168
VDD
31
DQ19
77
VDDQ
123
DQ23
169
DM6/DQS15
32
A5
78
DQS6
124
VSS
170
DQ54
33
DQ24
79
DQ50
125
A6
171
DQ55
34
VSS
80
DQ51
126
DQ28
172
VDDQ
35
DQ25
81
VSS
127
DQ29
173
NC
36
DQS3
82
VDDID
128
VDDQ
174
DQ60
37
A4
83
DQ56
129
DM3/DQS12
175
DQ61
38
VDD
84
DQ57
130
A3
176
VSS
39
DQ26
85
VDD
131
DQ30
177
DM7/DQS16
40
DQ27
86
DQS7
132
VSS
178
DQ62
41
A2
87
DQ58
133
DQ31
179
DQ63
42
VSS
88
DQ59
134
CB4
180
VDDQ
43
A1
89
VSS
135
CB5
181
SA0
44
CB0
90
NC
136
VDDQ
182
SA1
45
CB1
91
SDA
137
CLK0
183
SA2
46
VDD
92
SCL
138
/CLK0
184
VDDSPD
Data Sheet . E0236E10 (Ver. 1.0)
3
EBD25RB4ALFB
Pin Description
Pin name
Function
A0 to A11
Address input
Row address
Column address
BA0, BA1
Bank select address
DQ0 to DQ63
Data input/output
CB0 to CB7
Check bit (Data input/output)
/RAS
Row address strobe command
/CAS
Column address strobe command
/WE
Write enable
/CS0
Chip select
CKE0
Clock enable
CLK0
Clock input
/CLK0
Differential clock input
DQS0 to DQS8
Input and output data strobe
DM0 to DM8/DQS9 to DQS17
Input masks
SCL
Clock input for serial PD
A0 to A11
A0 to A9, A11
SDA
Data input/output for serial PD
SA0 to SA2
Serial address input
VDD
Power for internal circuit
VDDQ
Power for DQ circuit
VDDSPD
Power for serial EEPROM
VREF
Input reference voltage
VSS
Ground
VDDID
VDD indentication flag
/RESET
Reset pin (forces register inputs low)
NC
No connection
Data Sheet . E0236E10 (Ver. 1.0)
4
EBD25RB4ALFB
Serial PD Matrix
Byte No.
0
1
Function described
Number of bytes utilized by module
manufacturer
Total number of bytes in serial PD
device
Bit7
Bit6
Bit5 Bit4
Bit3
Bit2
Bit1 Bit0
Hex value
Comments
1
0
0
0
0
0
0
0
80H
128 bytes
0
0
0
0
1
0
0
0
08H
256 bytes
2
Memory type
0
0
0
0
0
1
1
1
07H
DDR SDRAM
3
Number of row address
0
0
0
0
1
1
0
0
0CH
12
4
Number of column address
0
0
0
0
1
0
1
1
0BH
11
5
Number of DIMM banks
0
0
0
0
0
0
0
1
01H
1
6
Module data width
0
1
0
0
1
0
0
0
48H
72 bits
7
Module data width continuation
0
0
0
0
0
0
0
0
00H
0
8
Voltage interface level of this assembly 0
0
0
0
0
1
0
0
04H
SSTL 2
9
DDR SDRAM cycle time, CL = 2.5
(-7A)
0
1
1
1
0
1
0
1
75H
7.5ns
(-75)
0
1
1
1
0
1
0
1
75H
7.5ns
(-1A)
1
0
1
0
0
0
0
0
A0H
10ns
0
1
1
1
0
1
0
1
75H
0.75ns
(-75)
0
1
1
1
0
1
0
1
75H
0.75ns
(-1A)
1
0
0
0
0
0
0
0
80H
0.8ns
10
SDRAM access from clock (tAC)
(-7A)
11
DIMM configuration type
0
0
0
0
0
0
1
0
02H
ECC
12
Refresh rate/type
1
0
0
0
0
0
0
0
80H
Norm
13
Primary SDRAM width
0
0
0
0
0
1
0
0
04H
×4
14
Error checking SDRAM width
0
0
0
0
0
1
0
0
04H
×4
0
0
0
0
0
0
0
1
01H
1 CLK
0
0
0
0
1
1
1
0
0EH
2, 4, 8
0
0
0
0
0
1
0
0
04H
4
0
0
0
0
1
1
0
0
0CH
2, 2.5
0
0
0
0
0
0
0
1
01H
0
0
0
0
0
0
0
1
0
02H
1
SDRAM module attributes
0
0
1
0
0
1
1
0
26H
Reg+PLLdifclk
22
SDRAM device attributes: General
0
0
0
0
0
0
0
0
00H
VDD± 0.2V
23
Minimum clock cycle time at CL = 2
(-7A)
0
1
1
1
0
1
0
1
75H
7.5ns
15
16
17
18
19
20
21
24
SDRAM device attributes:
Minimum clock delay back-to-back
column access
SDRAM device attributes:
Burst length supported
SDRAM device attributes: Number of
banks on SDRAM device
SDRAM device attributes:
/CAS latency
SDRAM device attributes:
/CS latency
SDRAM device attributes:
/WE latency
(-75)
1
0
1
0
0
0
0
0
A0H
10ns
(-1A)
1
0
1
0
0
0
0
0
A0H
10ns
Maximum data access time (tAC) from
clock at CL = 2
0
(-7A)
1
1
1
0
1
0
1
75H
0.75ns
(-75)
0
1
1
1
0
1
0
1
75H
0.75ns
(-1A)
1
0
0
0
0
0
0
0
80H
0.8ns
0
0
0
0
0
0
0
0
00H
25 to 26
Data Sheet . E0236E10 (Ver. 1.0)
5
EBD25RB4ALFB
Byte No.
Function described
Bit7
Bit6
Bit5 Bit4
Bit3
Bit2
Bit1 Bit0
Hex value
Comments
27
Minimum row precharge time (tRP)
(-7A)
0
1
0
1
0
0
0
0
50H
20ns
(-75)
0
1
0
1
0
0
0
0
50H
20ns
(-1A)
0
1
0
1
0
0
0
0
50H
20ns
0
0
1
1
1
1
0
0
3CH
15ns
(-75)
0
0
1
1
1
1
0
0
3CH
15ns
(-1A)
0
0
1
1
1
1
0
0
3CH
15ns
0
1
0
1
0
0
0
0
50H
20ns
(-75)
0
1
0
1
0
0
0
0
50H
20ns
(-1A)
0
1
0
1
0
0
0
0
50H
20ns
0
0
1
0
1
1
0
1
2DH
45ns
(-75)
0
0
1
0
1
1
0
1
2DH
45ns
(-1A)
0
0
1
1
0
0
1
0
32H
50ns
28
29
30
Minimum row active to row active
delay (tRRD)
(-7A)
Minimum /RAS to /CAS delay (tRCD)
(-7A)
Minimum active to precharge time
(tRAS)
(-7A)
31
Module bank density
0
1
0
0
0
0
0
0
40H
256Mbytes
32
Address and command setup time
before clock (tIS)
(-7A)
1
0
0
1
0
0
0
0
90H
0.9ns
(-75)
1
0
0
1
0
0
0
0
90H
0.9ns
(-1A)
1
0
1
1
0
0
0
0
B0H
1.1ns
Address and command hold time after
1
clock (tIH)
(-7A)
0
0
1
0
0
0
0
90H
0.9ns
33
34
35
(-75)
1
0
0
1
0
0
0
0
90H
0.9ns
(-1A)
1
0
1
1
0
0
0
0
B0H
1.1ns
0
1
0
1
0
0
0
0
50H
0.5ns
(-75)
0
1
0
1
0
0
0
0
50H
0.5ns
(-1A)
0
1
1
0
0
0
0
0
60H
0.6ns
0
1
0
1
0
0
0
0
50H
0.5ns
(-75)
0
1
0
1
0
0
0
0
50H
0.5ns
(-1A)
0
1
1
0
0
0
0
0
60H
0.6ns
Future Use
Data input setup time before clock
(tDS)
(-7A)
Data input hold time after clock (tDH)
(-7A)
36 to 61
Superset information
0
0
0
0
0
0
0
0
00H
62
SPD Revision
0
0
0
0
0
0
0
0
00H
63
Checksum for bytes 0 to 62
(-7A)
1
0
1
0
0
0
1
0
A2H
(-75)
1
1
0
0
1
1
0
1
CDH
(-1A)
0
1
1
1
0
0
1
1
73H
64
Manufacturer’s JEDEC ID code
1
1
1
1
1
1
1
0
FEH
65 to 71
Manufacturer’s JEDEC ID code
0
0
0
0
0
0
0
0
00H
72
Manufacturing location
73 to 90
Manufacturer’s part number
91 to 92
Revision code
93 to 94
Manufacturing date
Data Sheet . E0236E10 (Ver. 1.0)
6
Elpida Memory
EBD25RB4ALFB
Byte No.
Function described
Bit7
95 to 98
Module serial number
99 to 127
Manufacture specific data
Bit6
Bit5 Bit4
Bit3
Bit2
Bit1 Bit0
Hex value
Block Diagram
VSS
/RCS0
RS
RS
DQS0
DM0/DQS9
4
RS
DQ0 to DQ3
DQS
/CS
DQ
D0
DM
4
RS
4
RS
DQS
/CS
DQ
D1
DM
4
RS
4
RS
DQS
/CS
DQ
D2
DM
4
4
RS
DQS
/CS
DQ
D3
DM
4
4
RS
DQS
/CS
DQ
D4
DM
4
4
/CS
DQ
D11
DM
DQS
/CS
DQ
D12
DM
DQS
/CS
DQ
D13
DM
RS
RS
DQS
/CS
DQ
D5
DM
4
RS
DQ44 to DQ47
RS
DQS
/CS
DQ
D14
DM
RS
DQS6
DM6/DQS15
4
RS
DQ48 to DQ51
DQS
/CS
DQ
D6
DM
4
RS
DQ52 to DQ55
RS
DQS
/CS
DQ
D15
DM
RS
DQS7
DM7/DQS16
4
RS
DQ56 to DQ59
DQS
/CS
DQ
D7
DM
4
RS
DQ60 to DQ63
RS
DQS
/CS
DQ
D16
DM
RS
DQS8
DM8/DQS17
4
CB0 to CB3
RS
PCK
/PCK
VDDQ
DQS
DM5/DQS14
DQ40 to DQ43
RS
RS
DQ36 to DQ39
RS
/WE
DM
RS
DQS5
RS
D10
DM4/DQS13
DQ32 to DQ35
CKE0
RS
DQ28 to DQ31
RS
RS
/CS
DQ
RS
DQS4
/CAS
DQS
DM3/DQS12
DQ24 to DQ27
RS
RS
DQ20 to DQ23
RS
/RAS
DM
RS
DQS3
A0 to A12
D9
DM2/DQS11
DQ16 to DQ19
RS
RS
DQ12 to DQ15
DQS2
RS
/CS
DQ
DM1/DQS10
DQ8 to DQ11
BA0 to BA1
DQS
RS
DQS1
/CS0
RS
DQ4 to DQ7
R
E
G
I
S
T
E
R
RS
DQS
/CS
DQ
D8
DM
4
CB4 to CB7
/RCS0 -> /CS: SDRAMs D0 to D17
RBA0 to RBA1 -> BA0 to BA1: SDRAMs D0 to D17
RA0 to RA12 -> A0 to A12: SDRAMs D0 to D17
/RRAS -> /RAS: SDRAMs D0 to D17
RS
DQS
/CS
DQ
D17
DM
* D0 to D17: EDD1204ALTA
U0: 2k bits EEPROM
RS: 22Ω
PLL: CDCV857
Register: SSTV16857
/RCAS -> /CAS: SDRAMs D0 to D17
Serial PD
RCKE0A -> CKE: SDRAMs D0 to D17
/RWE -> /WE: SDRAMs D0 to D17
SCL
SCL
/RESET
D0 to D17
VDD
D0 to D17
VREF
D0 to D17
VSS
D0 to D17
SDA
SDA
U0
A0
A1
A2
SA0 SA1 SA2
Notes:
1. The SDA pull-up resistor is required due to
the open-drain/open-collector output.
2. The SCL pull-up resistor is recommended
because of the normal SCL line inacitve
"high" state.
VDDID
open
CK0, /CK0
PLL*
Note: Wire per Clock loading table/Wiring diagrams.
Data Sheet . E0236E10 (Ver. 1.0)
7
Comments
EBD25RB4ALFB
Differential Clock Net Wiring (CLK0, /CLK0)
0ns (nominal)
SDRAM
stack
PLL
120Ω
OUT1
SDRAM
stack
120Ω
CLK0
IN
240Ω
/CLK0
120Ω
Register1
(Typically two registers per DIMM)
OUT'N'
C
Feedback
240Ω
Register2
Notes: 1. The clock delay from the input of the PLL clock to the input of any SDRAM or register willl
be set to 0ns (nominal).
2. Input, output and feedback clock lines are terminated from line to line as shown, and not
from line to ground.
3. Only one PLL output is shown per output type. Any additional PLL outputs will be wired
in a similar manner.
4. Termination resistors for feedback path clocks are located after the pins of the PLL.
Data Sheet . E0236E10 (Ver. 1.0)
8
EBD25RB4ALFB
Pin Functions (1)
CLK, /CLK (input pin): The CLK and the /CLK are the master clock inputs. All inputs except DMs, DQSs and DQs
are referred to the cross point of the CLK rising edge and the VREF level. When a read operation, DQSs and DQs
are referred to the cross point of the CLK and the /CLK. When a write operation, DMs and DQs are referred to the
cross point of the DQS and the VREF level. DQSs for write operation are referred to the cross point of the CLK and
the /CLK.
/CS (input pin): When /CS is Low, commands and data can be input. When /CS is High, all inputs are ignored.
However, internal operations (bank active, burst operations, etc.) are held.
/RAS, /CAS, and /WE (input pins): These pins define operating commands (read, write, etc.) depending on the
combinations of their voltage levels. See "Command operation".
A0 to A11 (input pins): Row address (AX0 to AX11) is determined by the A0 to the A11 level at the cross point of
the CLK rising edge and the VREF level in a bank active command cycle. Column address (AY0 to AY9, AY11) is
loaded via the A0 to the A9, the A11 at the cross point of the CLK rising edge and the VREF level in a read or a write
command cycle. This column address becomes the starting address of a burst operation.
A10 (AP) (input pin): A10 defines the precharge mode when a precharge command, a read command or a write
command is issued. If A10 = High when a precharge command is issued, all banks are precharged. If A10 = Low
when a precharge command is issued, only the bank that is selected by BA1, BA0 is precharged. If A10 = High
when read or write command, auto-precharge function is enabled. While A10 = Low, auto-precharge function is
disabled.
BA0, BA1 (input pin): BA0/BA1 are bank select signals. The memory array is divided into bank 0, bank 1, bank 2
and bank 3. If BA1 = Low and BA0 = Low, bank 0 is selected. If BA1 = High and BA0 = Low, bank 1 is selected. If
BA1 = Low and BA0 = High, bank 2 is selected. If BA1 = High and BA0 = High, bank 3 is selected.
CKE (input pin): CKE controls power down and self-refresh. The power down and the self-refresh commands are
entered when the CKE is driven Low and exited when it resumes to High.
The CKE level must be kept for 1 CLK cycle (= LCKEPW) at least, that is, if CKE changes at the cross point of the
CLK rising edge and the VREF level with proper setup time tIS, at the next CLK rising edge CKE level must be kept
with proper hold time tIH.
Data Sheet . E0236E10 (Ver. 1.0)
9
EBD25RB4ALFB
Pin Functions (2)
DQ, CB (input and output pins): Data are input to and output from these pins.
DQS (input and output pin): DQS provide the read data strobes (as output) and the write data strobes (as input).
DM (input pins): DM is the reference signal of the data input mask function. DMs are sampled at the cross point of
DQS and VREF
VDD and VDDQ (power supply pins): 2.5V is applied. (VDD is for the internal circuit and VDDQ is for the output
buffer.)
VDDSPD (power supply pin): 2.5V is applied (For serial EEPROM).
VSS (power supply pin): Ground is connected.
/RESET (input pin): LVCMOS reset input. When /RESET is low, all registers are reset and all outputs are low.
Detailed Operation Part, AC Characteristics and Timing Waveforms
Refer to the EDD1204ALTA, EDD1208ALTA, EDD1216ALTA Series datasheet (E0136E). DM pins of component
device fixed to VSS level on the module board. DIMM /CAS latency = Device CL + 1 for registered type.
Data Sheet . E0236E10 (Ver. 1.0)
10
EBD25RB4ALFB
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 1ms and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VT
–0.5 to +3.6
V
Supply voltage relative to VSS
VDD, VDDQ
–0.5 to +3.6
V
Short circuit output current
IO
50
mA
Power dissipation
PD
21
W
Operating temperature
TA
0 to +70
°C
Storage temperature
Tstg
–55 to +125
°C
Caution
Note
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Operating Conditions (TA = 0 to +70°C)
Parameter
Symbol
min.
Typ
max.
Unit
Notes
Supply voltage
VDD, VDDQ
2.3
2.5
2.7
V
1, 2
VSS
0
0
0
V
Input reference voltage
VREF
0.49 × VDDQ
—
0.51 × VDDQ
V
1
Termination voltage
VTT
VREF – 0.04
VREF
VREF + 0.04
V
1
DC Input high voltage
VIH
VREF + 0.18
—
VDDQ + 0.3
V
1, 3
DC Input low voltage
VIL
–0.3
—
VREF – 0.18
V
1, 4
DC Input signal voltage
VIN (dc)
–0.3
—
VDDQ + 0.3
V
5
DC differential input voltage
VSWING (dc) 0.36
—
VDDQ + 0.6
V
6
Notes: 1.
2.
3.
4.
5.
6.
All parameters are referred to VSS, when measured.
VDDQ must be lower than or equal to VDD.
VIH is allowed to exceed VDD up to 4.6V for the period shorter than or equal to 5ns.
VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
VIN (dc) specifies the allowable dc execution of each differential input.
VSWING (dc) specifies the input differential voltage required for switching.
Data Sheet . E0236E10 (Ver. 1.0)
11
EBD25RB4ALFB
DC Characteristics 1 (TA = 0 to 70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
Operating current (ACTV-PRE)
ICC0
Operating current (ACTV-READICC1
PRE)
Idle power down standby current ICC2P
Idle standby current
ICC2N
Active power down standby
current
ICC3P
Active standby current
ICC3N
Operating current
(Burst read operation)
ICC4R
Operating current
(Burst write operation)
ICC4W
Auto refresh current
ICC5
Self refresh current
ICC6
Notes. 1.
2.
3.
4.
5.
6.
7.
Grade
-7A
-75
-1A
-7A
-75
-1A
-7A
-75
-1A
-7A
-75
-1A
-7A
-75
-1A
-7A
-75
-1A
-7A
-75
-1A
-7A
-75
-1A
-7A
-75
-1A
-7A
-75
-1A
max.
Unit
Test condition
Notes
TBD
mA
CKE ≥ VIH,
tRC = tRC (min.)
1, 2, 5
TBD
mA
CKE ≥ VIH, BL = 2,
CL = 3.5,
tRC = tRC (min.)
1, 2, 5
TBD
mA
CKE ≤ VIL
4
TBD
mA
CKE ≥ VIH, /CS ≥ VIH
4
TBD
mA
CKE ≤ VIL
3
TBD
mA
CKE ≥ VIH, /CS ≥ VIH
tRAS = tRAS (max.)
3
TBD
mA
CKE ≥ VIH, BL = 2,
CL = 3.5
1, 2, 5, 6
TBD
mA
CKE ≥ VIH, BL = 2,
CL = 3.5
1, 2, 5, 6
TBD
mA
tRFC = tRFC (min.)
Input ≤ VIL or ≥ VIH
TBD
mA
Input ≥ VDD – 0.2V
Input ≤ 0.2V.
These ICC data are measured under condition that DQ pins are not connected.
One bank operation.
One bank active.
All banks idle.
Command/Address transition once per one cycle.
Data/Data mask transition twice per one cycle.
The ICC data on this table are measured with regard to tCK = tCK (min.) in general.
DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
min.
max.
Unit
Test condition
Input leakage current
ILI
–10
10
µA
VDD ≥ VIN ≥ VSS
Output leakage current
ILO
–5
5
µA
VDD ≥ VOUT ≥ VSS
Output high current
IOH
–15.2
—
mA
VOUT = 1.95V
Output low current
IOL
15.2
—
mA
VOUT = 0.35V
Data Sheet . E0236E10 (Ver. 1.0)
12
Notes
EBD25RB4ALFB
Pin Capacitance (TA = 25°C, VDD, VDDQ = 2.5V ± 0.2V)
Parameter
Symbol
Pins
Input capacitance
CI1
Address, /RAS, /CAS, /WE,
TBD
/CS, CKE
max.
Unit
pF
Input capacitance
CI2
CLK, /CLK
TBD
pF
Data and DQS input/output
capacitance
CO
DQ, DQS, CB
TBD
pF
Notes
AC Characteristics (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
Synchronous Characteristics
-7A
Parameter
Clock cycle time
CL = 2.5
-75
-1A
Symbol
min.
max.
min.
max.
min.
max.
Unit
tCK
7.5
12
7.5
12
10
12
ns
7.5
12
10
12
10
12
ns
CL = 2
CLK high-level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
tCK
CLK low-level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tCK
DQ output access time from CLK, /CLK
tAC
–0.75
0.75
–0.75
0.75
–0.8
0.8
ns
DQS output access time from CLK, /CLK
tDQSCK –0.75
0.75
–0.75
0.75
–0.8
0.8
ns
—
0.5
—
0.5
—
0.6
ns
DQS-DQ skew (for DQS and all DQ signals) tDQSQA —
0.5
—
0.5
—
0.6
ns
DQS-DQ skew (for DQS and associated DQ
tDQSQ
signals)
Data out low-impedance time from CLK,
/CLK
Data out high-impedance time from CLK,
/CLK
tLZ
–0.75
0.75
–0.75
0.75
–0.8
0.8
ns
tHZ
–0.75
0.75
–0.75
0.75
–0.8
0.8
ns
Half clock period
tHP
tCH, tCL
—
tCH, tCL
—
tCH, tCL —
ns
Read preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Read postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
DQ/DQS output hold time from DQS
tQH
tHP –
0.75
—
tHP – 0.75 —
tHP – 1 —
ns
DQ and DM input setup time
tDS
0.5
—
0.5
—
0.6
—
ns
DQ and DM input hold time
tDH
0.5
—
0.5
—
0.6
—
ns
DQ and DM input pulse width (for each
input)
tDIPW
1.75
—
1.75
—
2
—
ns
Write preamble setup time
tWPRES 0
—
0
—
0
—
ns
Write preamble
tWPRE
0.25
—
0.25
—
0.25
—
tCK
Write postamble
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
Write command to first DQS latching
transition
tDQSS
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS input high pulse width
tDQSH
0.35
—
0.35
—
0.35
—
tCK
DQS input low pulse width
tDQSL
0.35
—
0.35
—
0.35
—
tCK
DQS falling edge to CLK setup time
tDSS
0.2
—
0.2
—
0.2
—
tCK
DQS falling edge hold time from CLK
tDSH
0.2
—
0.2
—
0.2
—
tCK
Address and control input setup time
tIS
0.9
—
0.9
—
1.1
—
ns
Address and control input hold time
tIH
0.9
—
0.9
—
1.1
—
ns
Address and control input pulse width
tIPW
2.2
—
2.2
—
2.5
—
ns
Internal write to read command delay
tWTR
1
—
1
—
1
—
tCK
Data Sheet . E0236E10 (Ver. 1.0)
13
Note
EBD25RB4ALFB
Synchronous Characteristics Example
tCK
7.5 ns
Symbol
min.
max.
10 ns
min.
max.
Unit
tCH
3.4
4.1
4.5
5.5
ns
tCL
3.4
4.1
4.5
5.5
ns
tRPRE
6.75
8.25
9
11
ns
tRPST
3
4.5
4
6
ns
tWPRE
0.25
—
2.5
—
ns
tWPST
3
4.5
4
6
ns
tDQSS
5.6
9.4
7.5
12.5
ns
tDQSH
2.63
—
3.5
—
ns
tDQSL
2.63
—
3.5
—
ns
tDSS
1.5
—
2
—
ns
tDSH
1.5
—
2
—
ns
tWTR
7.5
—
10
—
ns
Asynchronous Characteristics
-7A
Parameter
ACT to REF/ACT command period
(operation)
REF to REF/ACT command period
(refresh)
ACT to PRE command period
-75
-1A
Symbol
min.
max.
min.
max.
min.
max.
Unit
tRC
65
—
65
—
70
—
ns
tRFC
75
—
75
—
80
—
ns
tRAS
45
120,000
45
120,000
50
120,000
ns
PRE to ACT command period
tRP
20
—
20
—
20
—
ns
ACT to READ/WRITE delay
tRCD
20
—
20
—
20
—
ns
ACT(one) to ACT(another) command
period
tRRD
15
—
15
—
15
—
ns
Write recovery time
tWR
2
—
2
—
2
—
CLK
Auto precharge write recovery time
+ precharge time
tDAL
TBD
—
TBD
—
TBD
—
ns
Mode register set command cycle time
tMRD
15
—
15
—
15
—
ns
Exit self refresh to command
tXSNR
75
—
75
—
80
—
ns
Average periodic Refresh interval
tREF1
—
15.6
—
15.6
—
15.6
µs
Data Sheet . E0236E10 (Ver. 1.0)
14
EBD25RB4ALFB
Physical Outline
Unit: mm
128.95
4.00 max
(DATUM -A-)
(64.48)
2.30
4.00 min
Component area
(Front)
1
92
B
64.77
A
1.27 ± 0.10
49.53
133.35 ± 0.15
4.00 ± 0.10
Component area
(Back)
30.48 ± 0.15
184
17.80
93
10.00
2 – φ 2.50 ± 0.10
3.00 min
R 2.00
Detail B
(DATUM -A-)
1.27 typ
6.62
0.20 ± 0.15
2.50 ± 0.20
Detail A
2.175
R 0.90
1.00 ± 0.05
3.80
6.35
1.80 ± 0.10
Note: Tolerance on all dimensions ± 0.13 unless otherwise specified.
ECA-TS2-0050-01
Data Sheet . E0236E10 (Ver. 1.0)
15
EBD25RB4ALFB
CAUTION FOR HANDLING MEMORY MODULES
When handling or inserting memory modules, be sure not to touch any components on the modules, such as
the memory IC, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on these
components to prevent damaging them.
When re-packing memory modules, be sure the modules are NOT touching each other. Modules in contact
with other modules may cause excessive mechanical stress, which may damage the modules.
MDE0107
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
Data Sheet . E0236E10 (Ver. 1.0)
16
EBD25RB4ALFB
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
[Product applications]
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
This product is not designed to be resistant to electromagnetic waves or radiation. This product must be
used in a non-condensing environment.
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
M01E0107
Data Sheet . E0236E10 (Ver. 1.0)
17
Similar pages