TGS C945 Plastic-encapsulate transistor Datasheet

TIGER ELECTRONIC CO.,LTD
TO-92
C945
Plastic-Encapsulate Transistors
TO-92
TRANSISTOR (NPN )
1.EMITTER
FEATURE
z
Excellent hFE linearity
z
Low noise
z
Complementary to A733
2.COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
150
mA
PC
Collector Power Dissipation
400
mW
TJ
Junction Temperature
125
℃
Tstg
Storage Temperature
-55-125
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=1mA , IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=100 μA , IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100 μ A, IC=0
5
V
Collector cut-off current
ICBO
VCB=60V, IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=45V, IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V ,IC=0
0.1
μA
hFE(1)
VCE=6V , IC=1mA
70
hFE(2)
VCE=6V , IC=0.1mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB=10mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB=10mA
1
V
DC current gain
fT
Transition frequency
Collector output capacitance
Cob
Noise figure
NF
VCE=6V,IC=10mA,f=30MHz
700
200
VCB=10V,IE=0,f=1MHz
VCE=6V,IC=0.1mA
RG=10kΩ,f=1MHz
MHz
3.0
pF
10
dB
CLASSIFICATION OF hFE(1)
Rank
O
Y
GR
BL
Range
70-140
120-240
200-400
350-700
A,Jan,2011
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