Preliminary Datasheet BCR1AM-8P R07DS0178EJ0100 Rev.1.00 Sep 29, 2010 Triac Low Power Use Features Non-Insulated Type Planar Passivation Type IT (RMS) : 1 A VDRM : 400 V IFGTI , IRGTI, IRGT III : 5 mA (3 mA)Note5 IFGT III : 10 mA Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92*) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 3 2 Applications Contactless AC switch, fan motor, rice-cooker, electric pot, air cleaner, heater, refrigerator, washing machine, electric fan, vending machine, trigger circuit for low and medium triac, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Parameter Voltage class 8 400 500 Symbol VDRM VDSM Unit V V Symbol Ratings Unit RMS on-state current IT (RMS) 1.0 A Commercial frequency, sine full wave Note3 360° conduction, Tc = 56C Surge on-state current ITSM 10 A 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t 0.41 A2s PGM PG (AV) VGM IGM Tj Tstg — 1 0.1 6 0.5 – 40 to +125 – 40 to +125 0.23 W W V A C C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. Gate open. R07DS0178EJ0100 Rev.1.00 Sep 29, 2010 Page 1 of 6 BCR1AM-8P Preliminary Electrical Characteristics Parameter Symbol Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. 3. 4. 5. Unit Test conditions IDRM VTM VFGT VRGT VRGT — — — — — — 2.0 2.0 2.0 V V V V V VFGT IFGT IRGT IRGT IFGT — — — — — — — — — — 2.0 5 5Note5 5Note5 10 V mA mA mA mA VGD Rth (j-c) 0.1 — — — — 50 V C/W Tj = 125C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 2 — — V/s Tj = 125C Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Rated value Typ. Max. — 0.5 — 1.6 Min. — — mA V Tj = 125C, VDRM applied Tc = 25C, ITM = 1.5 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT 3 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = – 0.5 A/ms 3. Peak off-state voltage VD = 400 V R07DS0178EJ0100 Rev.1.00 Sep 29, 2010 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 6 BCR1AM-8P Preliminary Performance Curves 102 7 Tj = 25°C 5 3 2 Rated Surge On-State Current 10 Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 101 7 5 3 2 100 7 5 3 2 2 3 4 5 7 101 2 3 4 5 7 102 Gate Trigger Current vs. Junction Temperature PG(AV) = 0.1W VGM = 6V PGM = 1W IGM = 0.5A IFGT III VGD = 0.1V Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics 103 7 5 4 3 2 Typical Example IFGT I, IRGT I 102 7 5 4 3 2 IRGT III, IFGT III 101 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case, Junction to ambient) 103 7 5 4 3 2 Typical Example VFGT I, VRGT I VRGT III,VFGT III 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) R07DS0178EJ0100 Rev.1.00 Sep 29, 2010 Transient Thermal Impedance (°C/W) Gate Voltage (V) 2 Conduction Time (Cycles at 60Hz) 10–2 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 4 On-State Voltage (V) 100 7 5 3 IFGT I 2 IRGT I IRGT III 10–1 7 5 3 2 102 7 5 4 3 2 6 0 100 10–1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 101 7 5 3 2 8 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 103 7 5 3 2 Junction to ambient 102 7 5 Junction to case 3 2 101 7 5 3 2 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) Page 3 of 6 BCR1AM-8P Preliminary Allowable Case Temperature vs. RMS On-State Current Maximum On-State Power Dissipation 1.6 1.2 0.8 0.4 0 360° Conduction Resistive, inductive loads 0 0.4 1.2 1.6 2.0 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 120 100 80 60 40 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS On-State Current (A) 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Holding Current vs. Junction Temperature 103 7 5 4 3 2 Latching Current vs. Junction Temperature Typical Example Latching Current (mA) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Curves apply regardless of conduction angle RMS On-State Current (A) 140 0 140 RMS On-State Current (A) 160 Ambient Temperature (°C) 0.8 Case Temperature (°C) 160 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) On-State Power Dissipation (W) 2.0 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) R07DS0178EJ0100 Rev.1.00 Sep 29, 2010 102 7 5 3 2 Distribution T2+, G– Typical Example 101 7 5 3 2 100 7 5 3 2 T2+, G+ T2–, G– Typical Example T2–, G+ 10-1 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Page 4 of 6 BCR1AM-8P Preliminary Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 101 7 5 4 3 2 Typical Example Tj = 125°C 140 120 I Quadrant 100 80 60 40 III Quadrant 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Commutation Characteristics Gate Trigger Current vs. Gate Current Pulse Width III Quadrant Minimum Characteristics Value I Quadrant 10–1 –1 10 160 Rate of Rise of Off-State Voltage (V/μs) Typical Example Tj = 125°C IT = 1A τ = 500μs VD = 200V 100 7 5 4 3 2 Breakover Voltage vs. Rate of Rise of Off-State Voltage Junction Temperature (°C) Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Breakover Voltage vs. Junction Temperature 2 3 4 5 7 100 2 3 4 5 7 101 Rate of Decay of On-State Commutating Current (A/ms) 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 Typical Example IFGT I IFGT III IRGT III IRGT I 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (μs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω A 6V V A 6V 330Ω 330Ω V Test Procedure I Test Procedure II 6Ω 6Ω A 6V V 330Ω Test Procedure III R07DS0178EJ0100 Rev.1.00 Sep 29, 2010 A 6V V 330Ω Test Procedure IV Page 5 of 6 BCR1AM-8P Preliminary Package Dimensions Package Name TO-92* JEITA Package Code SC-43A RENESAS Code PRSS0003EA-A Previous Code T920 MASS[Typ.] 0.23g Unit: mm φ5.0Max 11.5Min 5.0Max 4.4 1.25 1.25 3.6 1.1 Circumscribed circle φ0.7 Order Code Lead form Straight type Lead form Form A8 Standard packing Vinyl sack Vinyl sack Taping Quantity 500 500 2000 Standard order code Type name Type name – Lead forming code Type name – TB Standard order code example BCR1AM-8P BCR1AM-8P -A6 BCR1AM-8P -TB Note : Please confirm the specification about the shipping in detail. 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