D44H8 D44H11 ® NPN SILICON POWER TRANSISTORS ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED APPLICATIONS GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIER ■ 3 1 DESCRIPTION The D44H8, and D44H11 are silicon Multiepitaxial Planar NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for various switching and general purpose applications. D44H8, D44H11 are complementary with D45H8, D45H11. 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value D44H8 V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) Unit D44H11 60 80 V 5 V Collector Current 10 A I CM Collector Peak Current 20 A P tot Total Dissipation at T c ≤ 25 o C Storage Temperature 50 W IC T stg Tj July 2002 Max. Operating Junction Temperature -65 to 150 o C 150 o C 1/5 D44H8/D44H11 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 2.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CBO Collector Cut-off Current (I E = 0) V CB = rated V CEO I EBO Emitter Cut-off Current (I C = 0) V EB = 5V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage I C = 100 mA for D44H8 for D44H11 Min. Typ. Max. Unit 10 µA 100 µA 60 80 V V V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 8 A I B = 0.4 A 1 V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 8 A I B = 0.8 A 1.5 V DC Current Gain IC = 2 A IC = 4 A V CE = 1 V V CE = 1 V h FE ∗ ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % Safe Operating Area 2/5 Derating Curves 60 40 D44H8/D44H11 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/5 D44H8/D44H11 TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 L2 L4 16.40 13.00 0.409 0.645 14.00 0.511 0.551 0.116 L5 2.65 2.95 0.104 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 3.85 0.147 M DIA. 2.60 3.75 0.102 0.151 P011CI 4/5 D44H8/D44H11 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5