EMLSI EM7641FS8DW-70LL 128k x8 bit super low power and low voltage full cmos static ram Datasheet

merging Memory & Logic Solutions Inc.
EM610FV8S Series
Low Power, 128Kx8 SRAM
Document Title
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
History
Draft Date
0.0
Initial Draft
May 9 , 2003
0.1
2’nd Draft
Add Pb-free part number
Remark
February 13 , 2004
Emerging Memory & Logic Solutions Inc.
IT Venture Tower Eastside 11F, 78, Karac-Dong, Songpa-Ku, Seoul, Rep.of Korea Zip Code : 138-160
Tel : +82-2-2142-1759~1766 Fax : +82-2-2142-1769 / Homepage : www.emlsi.com
The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
EM610FV8S Series
merging Memory & Logic Solutions Inc.
Low Power, 128Kx8 SRAM
FEATURES
GENERAL DESCRIPTION
•
•
•
•
•
•
The EM610FV8S families are fabricated by EMLSI’s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale
Package for user flexibility of system design. The families also supports low data retention voltage for battery
back-up operation with low data retention current.
Process Technology : 0.18µm Full CMOS
Organization : 128K x 8 bit
Power Supply Voltage : 2.7V ~ 3.6V
Low Data Retention Voltage : 1.5V(Min)
Three state output and TTL Compatible
Package Type : 32-sTSOP1
PRODUCT FAMILY
Power Dissipation
Product
Family
EM610FV8S
Operating
Temperature
Industrial
(-40 ~ 85oC)
Vcc
Range
2.7V~3.6V
Speed
Standby
(ISB1 , Typ)
Operating
(I CC1.Max)
PKG Type
551) / 70ns
0.5µA2)
3 mA
32 - sTSOP1
1. The parameter is measured with 30pF test load.
2. Typical values are measured at Vcc=3.3V, T A =25 oC and not 100% tested.
FUNCTIONAL BLOCK DIAGRAM
A11
1
32
OE
A9
2
31
A10
A8
3
30
CS1
A13
4
29
IO8
WE
CS2
5
6
28
27
IO7
IO6
A15
7
26
IO5
VCC
NC
8
9
25
24
IO4
VSS
A16
A14
A12
10
11
23
22
21
I/O3
I/O2
I/O1
20
19
A0
A1
18
A2
17
A3
A7
A6
32 - sTSOP
Type1 - Forward
12
13
A5
14
15
A4
16
Pre-charge Circuit
A0
A1
A2
VCC
Row S elect
PIN DESCRIPTION
A3
A4
A5
A6
A7
VSS
Memory Array
1024 x 1024
A8
A9
I/O1 ~ I/O8
Data
Cont
I/O Circuit
Column Select
Name
Function
Name
Function
A10 A11 A12 A13 A14 A15 A16
CS 1 ,CS 2
OE
A 0 ~A16
Chip select inputs
WE
Write Enable input
Output Enable input
Vcc
Power Supply
Address Inputs
Vss
Ground
Data Inputs/outputs
NC
No Connection
WE
OE
CS1
I/O1 ~I/O 8
CS2
2
Control Logic
EM610FV8S Series
merging Memory & Logic Solutions Inc.
Low Power, 128Kx8 SRAM
ABSOLUTE MAXIMUM RATINGS *
Parameter
Symbol
Voltage on Any Pin Relative to Vss
Ratings
Unit
VIN , VOUT
-0.2 to Vcc+0.3 (Max. 4.0V)
V
VCC
-0.2 to 4.0V
V
Power Dissipation
PD
1.0
W
Operating Temperature
TA
-40 to 85
oC
Voltage on Vcc supply relative to Vss
* Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
FUNCTIONAL DESCRIPTION
CS 1
CS 2
OE
WE
I/O
Mode
Power
H
X
X
X
High-Z
Deselected
Stand by
X
L
X
X
High-Z
Deselected
Stand by
L
H
H
H
High-Z
Output Disabled
Active
L
H
L
H
Data Out
Read
Active
L
H
X
L
Data In
Write
Active
Note: X means don’t care. (Must be low or high state)
3
EM610FV8S Series
merging Memory & Logic Solutions Inc.
Low Power, 128Kx8 SRAM
RECOMMENDED DC OPERATING CONDITIONS 1)
Parameter
1.
2.
3.
4.
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
2.7
3.3
3.6
V
Ground
VSS
0
0
0
V
Input high voltage
VIH
2.2
-
VCC + 0.22)
V
Input low voltage
VIL
-0.2 3)
-
0.6
V
TA= -40 to 85oC, otherwise specified
Overshoot: V CC +2.0 V in case of pulse width < 20ns
Undershoot: -2.0 V in case of pulse width < 20ns
Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE 1) (f =1MHz, TA=25oC)
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C IN
VIN=0V
-
8
pF
Input/Ouput capacitance
CIO
VIO =0V
-
10
pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
V IN=V SS to V CC
-1
-
1
µA
Output leakage current
ILO
CS 1 = VIH , CS2 =VIL or OE=V IH or WE=VIL , VIO= VSS to V CC
-1
-
1
µA
Operating power supply
ICC
I IO=0mA, CS 1=V IL, CS 2=WE = VIH , VI N=VI H or VIL
-
-
3
mA
-
-
3
mA
55ns
-
-
25
70ns
-
-
20
Cycle time=1µs, 100% duty, I IO=0mA,
I CC1
Average operating current
CS 1< 0.2V, CS2 >V CC -0.2V,
V IN< 0.2V or VIN >V CC-0.2V
I CC2
Cycle time = Min, I IO =0mA, 100% duty,
CS 1=V IL, CS2 =V IH, V IN=V IL or VI H
Output low voltage
VOL
I OL = 2.1mA
-
-
0.4
V
Output high voltage
VOH
I O H = -1.0mA
2.4
-
-
V
-
-
0.3
mA
-
0.5 1)
5
µA
Standby Current (TTL)
ISB
CS 1 = VIH , CS2 =VIL , Other inputs=V IH or V IL
CS 1 >V CC-0.2V, CS 2>V C C-0.2V (CS 1 controlled)
or 0V<CS 2 <0.2V (CS 2 controlled),
Standby Current (CMOS)
ISB1
Other inputs=0~V CC
o
(Typ. condition : V C C=3.3V @ 25 C)
(Max. condition : V CC=3.6V @ 85 o C)
NOTES
1. Typical values are measured at Vcc=3.3V, T A= 25o C and not 100% tested.
4
LL
LF
mA
EM610FV8S Series
merging Memory & Logic Solutions Inc.
Low Power, 128Kx8 SRAM
VTM 3)
AC OPERATING CONDITIONS
Test Conditions (Test Load and Test Input/Output Reference)
R12)
Input Pulse Level : 0.4 to 2.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 1.5V
Output Load (See right) : CL = 100pF+ 1 TTL
R22)
CL1)
CL 1) = 30pF + 1 TTL
1. Including scope and Jig capacitance
2. R1 =3070Ω,
R 2 =3150Ω
3. VTM=2.8V
READ CYCLE (V cc =2.7 to 3.6V, Gnd = 0V, T A = -40oC to +85oC)
Parameter
55ns
Symbol
70ns
Min
Max
Min
Max
Unit
Read cycle time
tRC
55
-
70
-
ns
Address access time
tAA
-
55
-
70
ns
Chip select to output
tco1, tco2
-
55
-
70
ns
tO E
-
25
-
35
ns
tLZ1, tLZ2
10
-
10
-
ns
tOLZ
5
-
5
-
ns
tHZ1, tHZ2
0
20
0
25
ns
Output disable to high-Z output
tOHZ
0
20
0
25
ns
Output hold from address change
tOH
10
-
10
-
ns
Output enable to valid output
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
WRITE CYCLE (Vcc =2.7 to 3.6V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
55ns
Symbol
70ns
Unit
Min
Max
Min
Max
tWC
55
-
70
-
ns
tCW1, tCW2
45
-
60
-
ns
Address setup time
tAs
0
-
0
-
ns
Address valid to end of write
tAW
45
-
60
-
ns
Write pulse width
tWP
40
-
50
-
ns
Write recovery time
tWR
0
-
0
-
ns
Write to ouput high-Z
tWHZ
0
20
0
20
ns
Data to write time overlap
tDW
25
Data hold from write time
tDH
0
-
0
-
ns
End write to output low-Z
tOW
5
-
5
-
ns
Write cycle time
Chip select to end of write
5
30
ns
merging Memory & Logic Solutions Inc.
EM610FV8S Series
Low Power, 128Kx8 SRAM
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1).
(Address Controlled, CS1=OE=VIL, CS2= WE=V IH )
tRC
Address
tAA
tOH
Data Out
Previous Data Valid
Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE = VIH)
tRC
Address
tAA
tOH
tCO
CS1
CS2
tHZ
tOE
OE
tOHZ
tOLZ
Data Out
High-Z
Data Valid
tLZ
NOTES (READ CYCLE)
1. t HZ and tOHZ are defined as the outputs achieve the open circuit conditions and are not referanced to output voltage levels.
2. At any given temperature and voltage condition, t HZ(Max.) is less than t LZ(Min.) both for a given device and from device to device
interconnection.
6
EM610FV8S Series
merging Memory & Logic Solutions Inc.
Low Power, 128Kx8 SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE CONTROLLED)
tWC
Address
tCW (2)
tWR (4)
CS1
CS2
tAW
tWP (1)
WE
tAS(3)
Data in
tDH
tDW
High-Z
High-Z
Data Valid
tWHZ
Data out
tOW
Data Undefined
TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 CONTROLLED)
tWC
Address
tAS(3)
tCW (2)
tWR (4)
CS1
CS2
tAW
tWP (1)
WE
tDW
Data in
Data out
Data Valid
High-Z
High-Z
7
tDH
EM610FV8S Series
merging Memory & Logic Solutions Inc.
Low Power, 128Kx8 SRAM
TIMING WAVEFORM OF WRITE CYCLE(3) ( CS2 CONTROLLED)
tWC
Address
tCW(2)
tW R(4)
CS1
tAS(3)
CS2
tAW
tW P(1)
WE
tDW
Data in
Data out
tDH
Data Valid
High-Z
High-Z
NOTES (WRITE CYCLE)
1. A write occurs during the overlap(tWP ) of low CS1, a high CS2 and low WE. A write begins at the latest
transition among CS1 goes low, CS2 goes high and WE goes low. A write ends at the earliest transition
when CS1 goes high, CS2 goes hagh and WE goes high. The t WP is measured from the beginning of write
to the end of write.
2. t CW is measured from the CS1 going low to end of write.
3. t A S is measured from the address valid to the beginning of write.
4. t WR is measured from the end or write to the address change. tWR applied in case a write ends as CS1 or WE
going high.
8
EM610FV8S Series
merging Memory & Logic Solutions Inc.
Low Power, 128Kx8 SRAM
DATA RETENTION CHARACTERISTICS
Parameter
Symbol
VCC for Data Retention
VDR
Data Retention Current
I DR
Chip Deselect to Data Retention Time
tSDR
Operation Recovery Time
Test Condition
ISB1 Test Condition
(Chip Disabled)
1)
VCC =1.5V, ISB1 Test Condition
(Chip Disabled) 1)
Min
Typ2)
Max
Unit
1.5
-
3.6
V
-
0.25
-
µA
0
-
-
t RC
-
-
See data retention wave form
tRDR
ns
NOTES
1. See the IS B 1 measurement condition of datasheet page 4.
2. Typical values are measured at T A= 25o C and not 100% tested.
DATA RETENTION WAVE FORM
CS1 Controlled
tSDR
Data Retention Mode
tRDR
Vcc
2.7V
2.2V
VDR
CS 1 > Vcc-0.2V
CS 1
GND
CS2 Controlled
Vcc
2.7V
CS2
Data Retention Mode
tRDR
tSDR
VDR
0.4V
CS 2 < 0.2V
GND
9
EM610FV8S Series
merging Memory & Logic Solutions Inc.
Low Power, 128Kx8 SRAM
PACKAGE DIMENSIONS
Unit : millimeters/Inches
( 32-sTSOP1-0813.4F )
+0.10
- 0.05
0.008 +0.004
- 0.002
0.20
13.40 +/-0.20
0.528 +/- 0.008
0.10
0.004 MAX
#1
#32
( 0.25 )
0.010
8.40
0.331MAX
0.50
0.0197
#16
8.00
0.315
#17
1.00 +/-0.10
0.039 +/- 0.004
0.25
TYP
0.010
11.80
0.465
+/-0.10
+/- 0.004
+0.10
- 0.05
0.006 +0.004
- 0.002
0.15
0~8
0.50
( 0.020 )
0.45~0.75
0.018~0.030
10
1.20
MAX
0.047
0.05
0.002 MIN
merging Memory & Logic Solutions Inc.
EM610FV8S Series
Low Power, 128Kx8 SRAM
MEMORY FUNCTION GUIDE
EM X XX X X X XX X X - XX XX
1. EMLSI Memory
11. Power
2. Device Type
10. Speed
3. Density
4. Option
9. Packages
5. Technology
8. Version
6. Operating Voltage
7. Orgainzation
1. Memory Component
8. Version
Blank ----------------- Mother Die
A ----------------------- First revision
B ----------------------- Second revision
C ----------------------- Third revision
D ----------------------- Fourth revision
E ----------------------- Fifth revision
F ----------------------- Sixth revision
2. Device Type
6 ------------------------ Low Power SRAM
7 ------------------------ STRAM
3. Density
1 ------------------------- 1M
2 ------------------------- 2M
4 ------------------------- 4M
8 ------------------------- 8M
16 ----------------------- 16M
32 ----------------------- 32M
64 ----------------------- 64M
9. Package
Blank ---------------------- FPBGA
S ---------------------------- 32 sTSOP1
T ---------------------------- 32 TSOP1
U ---------------------------- 44 TSOP2
W ---------------------------- Wafer
4. Option
0 ----------------------- Dual CS
1 ----------------------- Single CS
10. Speed
45 ---------------------- 45ns
55 ---------------------- 55ns
70 ---------------------- 70ns
85 ---------------------- 85ns
10 --------------------- 100ns
12 --------------------- 120ns
5. Technology
Blank ------------------ CMOS
F ------------------------ Full CMOS
6. Operating Voltage
Blank ------------------ 5.0V
V ------------------------- 2.7V~3.6V
U ------------------------- 3.0V
S ------------------------- 2.5V
R ------------------------- 2.0V
P ------------------------- 1.8V
11. Power
LL ---------------------- Low Low Power
LF ---------------------- Low Low Power(Pb-Free)
L ---------------------- Low Power
S ---------------------- Standard Power
7. Orginzation
8 ---------------------- x8 bit
16 ---------------------- x16 bit
32 ---------------------- x32 bit
11
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