UMS CHM2179B98F W-band mixer Datasheet

CHM2179b98F
W-band Mixer
GaAs Monolithic Microwave IC
Description
The CHM2179b98F is a monolithic single
channel mixer, which integrates high quality
Schottky
diodes that
produces
low
conversion loss and very low 1/f noise.
The circuit is designed for sensors system at
W-band, such as automotive long range
radar and industrial sensors.
The circuit is manufactured with a Schottky
diode MMIC process, 1µm gate length, via
holes through the substrate, air bridges and
stepper lithography.
It is available in chip form.
LO
RF
IF
Main Features
■ W-band LO and RF frequency range
■ Low conversion loss
■ IF from DC to >100MHz
■ High LO/RF isolation
■ High LO/AM Noise rejection
■ Very low IF noise
■ Low LO input power
■ Automatic assembled oriented
■ BCB layer protection
■ Small chip size 1.53 x 1.17 x 0.10mm
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
F_lo, F_rf LO, RF frequency
F_if
IF frequency range
Lc
Conversion loss
l_lo/rf
LO/RF isolation
N_if
IF noise @ 100kHz
Ref. : DSCHM2179b98F3246 - 03 Sep 13
Min
76
[DC;100]
Typ
8
22
-162
1/8
Max
79
Unit
GHz
MHz
dB
dB
dBm/Hz
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHM2179b98F
W-Band Mixer
Electrical Characteristics
Tamb.= +25°C.
Symbol
Parameter
Min
Typ
Max
Unit
F_lo, F_rf LO, RF frequency
76
79
GHz
F_if
IF frequency range
[DC;100]
MHz
Lc
Conversion loss
8
dB
P_lo
LO input power
3
5
8
dBm
P_RF_1dB RF input power at 1 dB
-3
0
dBm
(1)
VSWR_lo LO port VSWR (50Ω)
2:1
2.5:1
(1)
VSWR_rf
RF port VSWR (50Ω)
2:1
2.5:1
(2)
IMP_if
IF load impedance
200
Ω
L_lo/rf
LO/RF isolation
23
dB
R_lo_am
LO AM noise rejection (SSB)
27
dB
(3)
Noise figure for IF=1KHz
35
dB
(3)
Noise figure for IF=10KHz
29
dB
NF
(3)
Noise figure for IF=100KHz
21.5
dB
Noise figure for IF=200KHz (3)
18
dB
(4)
+V
Positive supply voltage
4.5
V
(4)
+I
Positive supply current
1
2.5
mA
Top
Operating temperature range
-40
+100
°C
(1)
An external matching network is required (see section “Recommended assembly plan”)
(2)
The IF optimum load for conversion loss is 200Ω. For minimum noise figure this load can
be lower, the best results have been obtained on 50Ω.
(3)
Measured on 200Ω IF impedance.
(4)
An external resistor controls the bias current (see section “Typical bias and IF
Configuration”)
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
(2)
+I
Supply current
P_lo
Maximum peak input power overdrive at LO port (3)
P_rf_cw Maximum input power at RF port (4)
Tj
Junction temperature
Top
Operating temperature range
Tstg
Storage temperature range
(1)
Operation of this device above anyone of these parameters
damage.
(2)
An external resistor controls the bias current (see section
Configuration”).
(3)
Duration < 1s.
(4)
Continuous wave mode.
Ref. : DSCHM2179b98F3246 - 03 Sep 13
2/8
Values
Unit
2.5
mA
9
dBm
3
dBm
175
°C
-40 to +100
°C
-55 to +150
°C
may cause permanent
“Typical bias and IF
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHM2179b98F
W-Band Mixer
Typical conversion gain
Measured on 200Ω IF load
Conversion gain (dB)
Conversion gain versus LO frequency
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
-13
-14
-15
-16
-17
-18
-19
-20
75
75,5
76
76,5
77
77,5
78
78,5
79
79,5
80
LO frequency (GHz)
Typical IF noise power
Measured on 50Ω IF load
IF noise power versus IF frequency
Ref. : DSCHM2179b98F3246 - 03 Sep 13
3/8
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHM2179b98F
W-Band Mixer
Mechanical data
3
2
1
4
5
6
11
10
9
8
7
Chip thickness: 100µm.
Chip size: 1530x1170 ±35µm
HF Pads (2,5) = 105 X 86 (BCB opening)
DC/IF Pads = 86 x 83 (BCB opening)
All dimensions are in micrometers
Pin number
Pin name
Description
1,3,4,6
On chip Ground: Not connected (1)
2
LO
LO input
5
RF
RF input
GND
7
Ground (optional)
8
Not connected
9
IF
IF output
10
C_ext
Bias decoupling
11
+V
Positive supply voltage
(1)
If required, please ask for more information.
Ref. : DSCHM2179b98F3246 - 03 Sep 13
4/8
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHM2179b98F
W-Band Mixer
Typical Bias and IF Configuration
Several external configurations are possible for bias and IF. The objective is to give flexibility
for the integration.
As this component is mainly dedicated to low IF use, there are several possibilities for
interfacing with low noise IF amplifier. The optimum IF load for conversion loss is 200,
however depending on the IF amplifier noise characteristic this load can be modified in order
to optimise the noise figure. A series capacitor, between IF output and the load is
recommended.
Due to high sensitivity to electrical discharges an integrated resistance is used and two ports
are available for biasing. One is for the connection of a decoupling capacitor (C_ext) and the
other one is for the supply voltage connection through an external series resistance (+V port).
However, in order to keep the compatibility with the CHM2179b98F, only the “C_ext” port can
be used.
+V
+V
R_load_IF
R_load_IF
C_bias
C_ext
R_bias1
+V
C_bias
C_IF
R_bias2
C_IF
IF
C_ext
+V
IF
1k
1k
LO
RF
RF
LO
Other possible configuration
(compatible with the previous version)
Recommended external bias and IF
configuration
The recommended values for external components are:
C_bias
R_bias x C >> 1/F_IF
R_bias1
2.9k for 1mA current consumption (V = 4.5V, typical LO power)
R_bias2
R_bias2 = R_bias1 + 1k
R_load_IF
From 50 to 200
Notes:
(1)
R_bias = R_bias1 + 1k when “+V” port is used, otherwise R_bias = R_bias2. R_bias can
be adjusted if necessary; this allows optimizing the performances when some parameters are
different from recommended ones (Supply voltage, LO power …). However maximum ratings
for the current have to be taken into account.
(2)
A series capacitor at IF outputs is recommended for DC decoupling.
Ref. : DSCHM2179b98F3246 - 03 Sep 13
5/8
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHM2179b98F
W-Band Mixer
Recommended assembly plan
In order to use acceptable wire bonding length, compatible with automatic pick and place and
wire bonding equipment, an external matching network is proposed on low dielectric constant
substrate for 76-77GHz band.
Example of integration using low dielectric constant substrate (Er=3, Thickness=127µm)
All dimensions are in micrometers
Ref. : DSCHM2179b98F3246 - 03 Sep 13
6/8
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHM2179b98F
W-Band Mixer
RF and LO ports impedance
For use at frequency band outside 76 to 77GHz range, and for custom assembly
configuration, the typical RF and LO ports impedance versus frequency are given below in
the bond pad centre plan. This can be used to design external matching network for
compensation of wire bonding.
Ref. : DSCHM2179b98F3246 - 03 Sep 13
7/8
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHM2179b98F
W-Band Mixer
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS products.
Recommended environmental management
UMS products are compliant with the regulation in particular with the directives RoHS
N°2011/65 and REACh N°1907/2006. More environmental data are available in the
application note AN0019 also available at http://www.ums-gaas.com.
Ordering Information
Chip form:
CHM2179b98F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorized for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHM2179b98F3246 - 03 Sep 13
8/8
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
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