CHM2179b98F W-band Mixer GaAs Monolithic Microwave IC Description The CHM2179b98F is a monolithic single channel mixer, which integrates high quality Schottky diodes that produces low conversion loss and very low 1/f noise. The circuit is designed for sensors system at W-band, such as automotive long range radar and industrial sensors. The circuit is manufactured with a Schottky diode MMIC process, 1µm gate length, via holes through the substrate, air bridges and stepper lithography. It is available in chip form. LO RF IF Main Features ■ W-band LO and RF frequency range ■ Low conversion loss ■ IF from DC to >100MHz ■ High LO/RF isolation ■ High LO/AM Noise rejection ■ Very low IF noise ■ Low LO input power ■ Automatic assembled oriented ■ BCB layer protection ■ Small chip size 1.53 x 1.17 x 0.10mm Main Electrical Characteristics Tamb.= +25°C Symbol Parameter F_lo, F_rf LO, RF frequency F_if IF frequency range Lc Conversion loss l_lo/rf LO/RF isolation N_if IF noise @ 100kHz Ref. : DSCHM2179b98F3246 - 03 Sep 13 Min 76 [DC;100] Typ 8 22 -162 1/8 Max 79 Unit GHz MHz dB dB dBm/Hz Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHM2179b98F W-Band Mixer Electrical Characteristics Tamb.= +25°C. Symbol Parameter Min Typ Max Unit F_lo, F_rf LO, RF frequency 76 79 GHz F_if IF frequency range [DC;100] MHz Lc Conversion loss 8 dB P_lo LO input power 3 5 8 dBm P_RF_1dB RF input power at 1 dB -3 0 dBm (1) VSWR_lo LO port VSWR (50Ω) 2:1 2.5:1 (1) VSWR_rf RF port VSWR (50Ω) 2:1 2.5:1 (2) IMP_if IF load impedance 200 Ω L_lo/rf LO/RF isolation 23 dB R_lo_am LO AM noise rejection (SSB) 27 dB (3) Noise figure for IF=1KHz 35 dB (3) Noise figure for IF=10KHz 29 dB NF (3) Noise figure for IF=100KHz 21.5 dB Noise figure for IF=200KHz (3) 18 dB (4) +V Positive supply voltage 4.5 V (4) +I Positive supply current 1 2.5 mA Top Operating temperature range -40 +100 °C (1) An external matching network is required (see section “Recommended assembly plan”) (2) The IF optimum load for conversion loss is 200Ω. For minimum noise figure this load can be lower, the best results have been obtained on 50Ω. (3) Measured on 200Ω IF impedance. (4) An external resistor controls the bias current (see section “Typical bias and IF Configuration”) Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter (2) +I Supply current P_lo Maximum peak input power overdrive at LO port (3) P_rf_cw Maximum input power at RF port (4) Tj Junction temperature Top Operating temperature range Tstg Storage temperature range (1) Operation of this device above anyone of these parameters damage. (2) An external resistor controls the bias current (see section Configuration”). (3) Duration < 1s. (4) Continuous wave mode. Ref. : DSCHM2179b98F3246 - 03 Sep 13 2/8 Values Unit 2.5 mA 9 dBm 3 dBm 175 °C -40 to +100 °C -55 to +150 °C may cause permanent “Typical bias and IF Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHM2179b98F W-Band Mixer Typical conversion gain Measured on 200Ω IF load Conversion gain (dB) Conversion gain versus LO frequency 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 -13 -14 -15 -16 -17 -18 -19 -20 75 75,5 76 76,5 77 77,5 78 78,5 79 79,5 80 LO frequency (GHz) Typical IF noise power Measured on 50Ω IF load IF noise power versus IF frequency Ref. : DSCHM2179b98F3246 - 03 Sep 13 3/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHM2179b98F W-Band Mixer Mechanical data 3 2 1 4 5 6 11 10 9 8 7 Chip thickness: 100µm. Chip size: 1530x1170 ±35µm HF Pads (2,5) = 105 X 86 (BCB opening) DC/IF Pads = 86 x 83 (BCB opening) All dimensions are in micrometers Pin number Pin name Description 1,3,4,6 On chip Ground: Not connected (1) 2 LO LO input 5 RF RF input GND 7 Ground (optional) 8 Not connected 9 IF IF output 10 C_ext Bias decoupling 11 +V Positive supply voltage (1) If required, please ask for more information. Ref. : DSCHM2179b98F3246 - 03 Sep 13 4/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHM2179b98F W-Band Mixer Typical Bias and IF Configuration Several external configurations are possible for bias and IF. The objective is to give flexibility for the integration. As this component is mainly dedicated to low IF use, there are several possibilities for interfacing with low noise IF amplifier. The optimum IF load for conversion loss is 200, however depending on the IF amplifier noise characteristic this load can be modified in order to optimise the noise figure. A series capacitor, between IF output and the load is recommended. Due to high sensitivity to electrical discharges an integrated resistance is used and two ports are available for biasing. One is for the connection of a decoupling capacitor (C_ext) and the other one is for the supply voltage connection through an external series resistance (+V port). However, in order to keep the compatibility with the CHM2179b98F, only the “C_ext” port can be used. +V +V R_load_IF R_load_IF C_bias C_ext R_bias1 +V C_bias C_IF R_bias2 C_IF IF C_ext +V IF 1k 1k LO RF RF LO Other possible configuration (compatible with the previous version) Recommended external bias and IF configuration The recommended values for external components are: C_bias R_bias x C >> 1/F_IF R_bias1 2.9k for 1mA current consumption (V = 4.5V, typical LO power) R_bias2 R_bias2 = R_bias1 + 1k R_load_IF From 50 to 200 Notes: (1) R_bias = R_bias1 + 1k when “+V” port is used, otherwise R_bias = R_bias2. R_bias can be adjusted if necessary; this allows optimizing the performances when some parameters are different from recommended ones (Supply voltage, LO power …). However maximum ratings for the current have to be taken into account. (2) A series capacitor at IF outputs is recommended for DC decoupling. Ref. : DSCHM2179b98F3246 - 03 Sep 13 5/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHM2179b98F W-Band Mixer Recommended assembly plan In order to use acceptable wire bonding length, compatible with automatic pick and place and wire bonding equipment, an external matching network is proposed on low dielectric constant substrate for 76-77GHz band. Example of integration using low dielectric constant substrate (Er=3, Thickness=127µm) All dimensions are in micrometers Ref. : DSCHM2179b98F3246 - 03 Sep 13 6/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHM2179b98F W-Band Mixer RF and LO ports impedance For use at frequency band outside 76 to 77GHz range, and for custom assembly configuration, the typical RF and LO ports impedance versus frequency are given below in the bond pad centre plan. This can be used to design external matching network for compensation of wire bonding. Ref. : DSCHM2179b98F3246 - 03 Sep 13 7/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHM2179b98F W-Band Mixer Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Ordering Information Chip form: CHM2179b98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorized for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHM2179b98F3246 - 03 Sep 13 8/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34