BSC120N03MS G OptiMOS™3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application (Notebook, VGA, POL) R DS(on),max • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 12 mΩ V GS=4.5 V 14 ID • 100% Avalanche tested 39 A PG-TDSON-8 • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications • Superior thermal resistance • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package Marking BSC120N03MS G PG-TDSON-8 120N03MS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 39 V GS=10 V, T C=100 °C 24 V GS=4.5 V, T C=25 °C 36 V GS=4.5 V, T C=100 °C 23 V GS=4.5 V, T A=25 °C, R thJA=50 K/W 2) Unit A 11 Pulsed drain current3) I D,pulse T C=25 °C 156 Avalanche current, single pulse 4) I AS T C=25 °C 35 Avalanche energy, single pulse E AS I D=25 A, R GS=25 Ω 10 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 Rev. 1.17 page 1 2009-11-04 BSC120N03MS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 28 T A=25 °C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.5 R thJA=50 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. bottom - - 4.5 top - - 20 6 cm2 cooling area2) - - 50 30 - - Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=16 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=20 A - 12.5 14 mΩ V GS=10 V, I D=30 A - 10.0 12.0 0.4 0.9 1.6 Ω 25 50 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 1.17 page 2 2009-11-04 BSC120N03MS G Parameter Values Symbol Conditions Unit min. typ. max. - 1100 1500 - 390 520 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=15 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 24 - Turn-on delay time t d(on) - 7.9 - Rise time tr - 4.4 - Turn-off delay time t d(off) - 7.0 - Fall time tf - 5.0 - Gate to source charge Q gs - 3.8 5.1 Gate charge at threshold Q g(th) - 1.8 2.4 Gate to drain charge Q gd - 1.7 2.9 Switching charge Q sw - 3.7 5.5 Gate charge total Qg - 7.2 10 Gate plateau voltage V plateau - 3.3 - Gate charge total Qg V DD=15 V, I D=30 A, V GS=0 to 10 V - 15 20 Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 6.2 8.3 Output charge Q oss V DD=15 V, V GS=0 V - 10 14 - - 25 - - 156 V DD=15 V, V GS=4.5 V, I D=30 A, R G=1.6 Ω pF ns Gate Charge Characteristics 5) V DD=15 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.92 1.1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 10 nC 4) 5) T C=25 °C A See figure 13 for more detailed information See figure 16 for gate charge parameter definition Rev. 1.17 page 3 2009-11-04 BSC120N03MS G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C) parameter: V GS 30 40 10 V 30 4.5 V I D [A] P tot [W] 20 20 10 10 0 0 0 40 80 120 160 0 40 80 T C [°C] 120 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 10 limited by on-state resistance 0.5 1 µs 102 10 µs 1 ms 0.01 single pulse 10 ms 100 101 102 0.01 0 0 0 0 0 0 1 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.17 0.05 0.02 0.1 10-1 10-1 0.1 Z thJC [K/W] I D [A] DC 100 0.2 1 100 µs 101 160 T C [°C] page 4 2009-11-04 BSC120N03MS G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 150 24 10 V 5V 20 120 3V 4.5 V 3.5 V 16 I D [A] R DS(on) [mΩ] 90 60 3.2 V 4V 4V 4.5 V 12 6V 5V 10 V 8 3.5 V 30 4 3.2 V 3V 2.8 V 0 0 0 1 2 3 0 10 20 V DS [V] 30 40 50 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 100 120 100 80 80 I D [A] g fs [S] 60 60 40 40 20 20 150 °C 25 °C 0 0 0 1 2 3 4 5 Rev. 1.17 0 40 80 120 160 I D [A] V GS [V] page 5 2009-11-04 BSC120N03MS G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 20 2.5 16 2 1.5 V GS(th) [V] R DS(on) [mΩ] 98 % 12 typ 8 1 4 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 25 °C 103 Coss 100 I F [A] C [pF] 150 °C, 98% Ciss 102 150 °C Crss 25 °C, 98% 10 101 100 1 0 10 20 30 Rev. 1.17 0.0 0.5 1.0 1.5 2.0 V SD [V] V DS [V] page 6 2009-11-04 BSC120N03MS G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 15 V 10 6V 24 V 8 V GS [V] I AV [A] 25 °C 10 6 100 °C 4 125 °C 2 1 0 1 10 100 1000 0 4 8 12 16 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 34 V GS Qg 32 V BR(DSS) [V] 30 28 26 V g s(th) 24 Q g(th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.17 page 7 2009-11-04 BSC120N03MS G Package Outline PG-TDSON-8 PG-TDSON-8: Outline Rev. 1.17 page 8 2009-11-04 BSC120N03MS G Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 1.17 page 9 2009-11-04 BSC120N03MS G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.17 page 10 2009-11-04