Ordering number : EN7988B 2SA2125/2SC5964 Bipolar Transistor http://onsemi.com (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Applicaitons • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features • • • Adoption of MBIT process Low collector to emitter saturation voltage Halogen free compliance Specifications ( • • Large current capacity High-speed switching ) : 2SA2125 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Conditions Ratings Unit VCBO VCES (-50)100 V (-50)100 V VCEO (--)50 V VEBO (--)6 V Continued on next page. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Top View 4.5 1.6 1 2 Packing Type: TD 4.0 1.0 2.5 1.5 2SA2125-TD-E 2SA2125-TD-H 2SC5964-TD-E 2SC5964-TD-H TD Marking 3 0.4 3.0 2SA2125 0.75 2SC5964 Electrical Connection 2 1 : Base 2 : Collector 3 : Emitter Bottom View LOT No. AY 1.5 HA 0.5 LOT No. 0.4 PCP Semiconductor Components Industries, LLC, 2013 November, 2013 1 2 1 3 2SA2125 3 2SC5964 N0613 TKIM TC-00003049/91912 TKIM/N3004 TSIM TB-00000265 No.7988-1/6 2SA2125/2SC5964 Continued from preceding page. Parameter Symbol Collector Current Collector Current (Pulse) IC ICP Base Current IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Conditions Ratings Unit (--)3 (--)6 A A (--)600 mA When mounted on ceramic substrate (250mm2×0.8mm) 1.3 W Tc=25°C 3.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product VCE=(--)2V, IC=(--)100mA VCE(sat)2 Base to Emitter Saturation Voltage Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Turn-ON Time Storage Time Fall Time typ 200 VCE=(--)10V, IC=(--)500mA VCE(sat)1 Collector to Emitter Saturation Voltage Ratings min VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A fT Cob Output Capacitance Conditions max (--)1 μA (--)1 μA 560 (390)380 VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)50mA MHz (24)13 IC=(--)2A, IB=(--)100mA IC=(--)2A, IB=(--)100mA Unit pF (--125)100 (--230)150 mV (--250)190 (--500)290 mV (--)0.94 (--)1.2 VBE(sat) V(BR)CBO IC=(--)10μA, IE=0A (--50)100 V V(BR)CES V(BR)CEO IC=(--)100μA, RBE=0Ω IC=(--)1mA, RBE=∞ (--50)100 V (--)50 V V(BR)EBO ton IE=(--)10μA, IC=0A tstg tf See specified Test Circuit. (--)6 V V (30)35 ns (230)300 ns (18)25 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% OUTPUT IB2 INPUT VR RB RL 50Ω + 100μF VBE= --5V + 470μF VCC=25V IC=10IB1= --10IB2=1A For PNP, the polarity is reversed. Ordering Information Package Shipping memo 2SA2125-TD-E Device PCP 1,000pcs./reel Pb Free 2SA2125-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free 2SC5964-TD-E PCP 1,000pcs./reel Pb Free 2SC5964-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free No.7988-2/6 2SA2125/2SC5964 IC -- VCE 2SA2125 mA --250 mA mA --150 mA --100 --200 --4.0 --3.5 -- --2.5 --20mA --2.0 --10mA --1.5 --5mA 4.0 40mA 3.5 3.0 20mA 2.5 10mA 2.0 5mA 1.5 1.0 --0.5 0.5 IB=0mA 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 Collector to Emitter Voltage, VCE -- V 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Collector to Emitter Voltage, VCE -- V 2.0 IT07259 IC -- VBE 3.0 2SC5964 VCE=2V 2SA2125 VCE= --2V --2.5 --1.5 --0.5 0 0 --0.2 --0.4 --0.6 --25° C Ta= 7 5°C 25°C --1.0 --0.8 --1.0 1.0 0 0 --1.2 0.2 0.4 DC Current Gain, hFE --25°C 2 100 1.0 1.2 IT07261 2SC5964 VCE=2V 7 Ta=75°C 25°C 0.8 hFE -- IC 1000 2SA2125 VCE= --2V 7 0.6 Base to Emitter Voltage, VBE -- V IT07260 hFE -- IC 3 1.5 0.5 Base to Emitter Voltage, VBE -- V 1000 2.0 --25°C Collector Current, IC -- A 2.5 --2.0 5 0.2 IT07258 IC -- VBE --3.0 IB=0mA 0 --2.0 °C 25°C 0 Collector Current, IC -- A 80mA 60mA --1.0 DC Current Gain, hFE 100m 4.5 50mA --3.0 A 2SC5964 Ta=7 5 Collector Current, IC -- A --4.5 IC -- VCE 5.0 Collector Current, IC -- A --5.0 Ta=75°C 25°C 5 --25°C 3 2 7 5 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 2 100 7 5 3 5 7 --0.1 2 3 3 5 7 0.1 5 7 --1.0 Collector Current, IC -- A 2 3 5 IT07264 2 3 5 7 1.0 2 Collector Current, IC -- A 3 5 IT07263 f T -- IC 1000 5 2 2 IT07262 2SA2125 VCE= --10V 7 3 --0.01 7 0.01 5 f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz 3 Gain-Bandwidth Product, f T -- MHz 3 --0.01 100 2SC5964 VCE=10V 7 5 3 2 100 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT07265 No.7988-3/6 2SA2125/2SC5964 Cob -- VCB 100 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 7 5 3 2 10 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 VCE(sat) -- IC 3 2 --0.1 °C 75 5 = Ta 3 °C 25 5°C --2 2 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 5 3 2 C 75° Ta= 7 5 °C 25 °C --25 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 7 75°C 25°C 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 3 2 3 2 5 IT07272 3 5 7 100 IT07267 2 0.1 7 5 °C 75 = Ta 3 2 25 °C C 5° --2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 IT07269 VCE(sat) -- IC 2SC5964 IC / IB=50 3 2 0.1 °C 75 7 5 = Ta 3 5°C --2 2 2 3 5 7 0.1 2 3 °C 25 5 7 1.0 2 Collector Current, IC -- A 3 5 IT07271 VBE(sat) -- IC 3 2 Ta= --25°C 5 7 10 VCE(sat) -- IC IT07270 2SA2125 IC / IB=20 --1.0 3 2SC5964 IC / IB=20 0.01 0.01 5 VBE(sat) -- IC 3 2 Collector Current, IC -- A Collector to Emitter Saturation Voltage, VCE(sat) -- V 7 --0.1 5 7 1.0 5 --2 2 5°C 5°C 75 °C --1.0 --0.01 --0.01 Base to Emitter Saturation Voltage, VBE(sat) -- V 3 3 7 2SA2125 IC / IB=50 5 2 IT07268 Ta= Collector to Emitter Saturation Voltage, VCE(sat) -- V 2 2 7 5 0.01 VCE(sat) -- IC 3 3 5 2SA2125 IC / IB=20 7 5 Collector to Base Voltage, VCB -- V Base to Emitter Saturation Voltage, VBE(sat) -- V Collector to Emitter Saturation Voltage, VCE(sat) -- V 5 7 IT07266 Collector to Emitter Saturation Voltage, VCE(sat) -- V 7 2SC5964 f=1MHz 10 0.1 5 7 --100 Collector to Base Voltage, VCB -- V Cob -- VCB 100 2SA2125 f=1MHz 2SC5964 IC / IB=20 2 1.0 Ta= --25°C 7 3 0.01 75°C 25°C 5 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT07273 No.7988-4/6 2SA2125/2SC5964 SOA ICP=6A IC=3A s 10 10 2 ms 0m DC s 0μ 1.0 7 5 op era tio n 3 2 0.1 7 5 2SA2125 / 2SC5964 Tc=25°C Single Pulse (For PNP, minus sign is omitted.) 3 2 0.01 0.1 2 3 5 7 1.0 2 3 2SA2125 / 2SC5964 W he n 1.2 50 s 1.3 s 0μ 10 3 Collector Current, IC -- A 1m PC -- Ta 1.4 <10μs Collector Dissipation, PC -- W 10 7 5 m ou nt 1.0 ed on ce ra 0.8 m ic su bs tra 0.6 te (2 50 m 0.4 m2 ✕ 0. 8m m 0.2 ) 0 5 7 10 2 Collector to Emitter Voltage, VCE -- V 3 5 7 IT07274 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07275 PC -- Tc 4.0 2SA2125 / 2SC5964 Collector Dissipation, PC -- W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT14114 No.7988-5/6 2SA2125/2SC5964 Outline Drawing Land Pattern Example 2SA2125-TD-E, 2SA2125-TD-H, 2SC5964-TD-E, 2SC5964-TD-H Mass (g) Unit 0.058 mm * For reference Unit: mm 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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