JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diodes WBFBP-06C FBAT54CDW (2×2×0.5) unit: mm SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES z Low Forward Voltage Drop z Fast Switching SCHOTTKY DIODE APPLICATION Ultra high speed switching, rectifiers For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) FBAT54CDW Marking:KL7 Maximum Ratings @TA=25℃ Parameter Peak Repetitive reverse voltage DC Blocking Voltage Symbol Limits Unit VRM VR 30 V mA Average Rectified Output Current IO Power Dissipation PD 100 150 TJ 125 ℃ TSTG -65-125 ℃ Junction temperature Storage temperature range ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage Forward Total leakage current voltage capacitance Reverse recovery time Symbol V(BR) IR VF CT t rr unless Test otherwise conditions IR= 100μA VR=25V mW specified） MIN MAX 30 V 2 IF=0.1mA 240 IF=1mA 320 IF=10mA 400 IF=30mA 500 IF=100mA 1000 VR=1V,f=1MHz IF=10mA, IR=10mA~1mA RL=100Ω UNIT uA mV 10 pF 5 nS Typical Characteristics Symbol A A1 b D E D1 E1 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.100 0.150 0.250 1.900 2.100 1.900 2.100 0.420 REF. 0.800 REF. 0.650 TYP. 0.400 REF. 0.350 REF. 0.500 REF. Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.006 0.010 0.075 0.083 0.075 0.083 0.017 REF. 0.032 REF. 0.026 TYP. 0.016 REF. 0.014 REF. 0.020 REF. APPLICATION CIRCUITS Bridge rectifiers