CYStech Electronics Corp. Spec. No. : C210D3 Issued Date : 2004.09.01 Revised Date : 2005.04.20 Page No. : 1/4 High Voltage NPN Epitaxial Planar Transistor BTC4620D3 Features • High breakdown voltage. (BVCEO =350V) • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA. • Complementary to BTA1776D3 • Pb-free package Symbol Outline BTC4620D3 TO-126ML B：Base C：Collector E：Emitter EC B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature BTC4620D3 Symbol Limit Unit VCBO VCEO VEBO IC ICP 350 350 5 100 200 1.2 7 150 -55~+150 V V V PD Tj Tstg mA W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C210D3 Issued Date : 2004.09.01 Revised Date : 2005.04.20 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) hFE fT Cob Min. 350 350 5 40 - Typ. 0.1 70 2.6 Max. 0.1 0.1 0.6 1 320 - Unit V V V µA µA V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=200V, IE=0 VEB=4V, IC=0 IC=20mA, IB=2mA IC=20mA, IB=2mA VCE=10V, IC=10mA VCE=30V, IC=10mA, f=10MHz VCB=30V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range BTC4620D3 C 40~80 D 60~120 E 100~200 F 160~320 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C210D3 Issued Date : 2004.09.01 Revised Date : 2005.04.20 Page No. : 3/4 Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 10000 Saturation Voltage---(mV) Current Gain---HFE 1000 100 VCE = 10V VCE = 5V 10 VCE = 1V 1000 VCE(SAT) @ IC = 20IB 100 VCE(SAT) @ IC = 10IB 10 1 1 10 100 Collector Current---IC(mA) 1 1000 10 100 Collector Current---IC(mA) Saturation Voltage vs Collector Current Power Derating Curve 1.6 Power Dissipation---PD(W) Saturation Voltage---(mV) 1000 VBE(SAT) @ IC =10IB 100 1.2 0.8 0.4 0 1 10 100 1000 0 50 100 150 200 Ambient Temperature---TA(℃) Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(W) 10 8 6 4 2 0 0 BTC4620D3 50 100 150 Case Temperature---TC(℃) 200 CYStek Product Specification Spec. No. : C210D3 Issued Date : 2004.09.01 Revised Date : 2005.04.20 Page No. : 4/4 CYStech Electronics Corp. TO-126ML Dimension Marking: C4620 Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-126ML Plastic Package CYStek Package Code: D3 *: Typical Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1220 0.1299 0.1181 0.1260 0.0737 0.0837 0.0294 0.0494 DIM A B C D Φ1 Φ2 F G Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 3.10 3.30 3.00 3.20 1.87 2.12 0.74 1.25 DIM H I J K L M N O Inches Min. Max. 0.0462 0.0562 *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842 Millimeters Min. Max. 1.17 1.42 *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC4620D3 CYStek Product Specification