BUV27 MEDIUM POWER NPN SILICON TRANSISTOR ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION APPLICATIONS SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The BUV27 is a Multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-base Voltage (I E = 0) 240 V V CEO Collector-Emitter Voltage (I B = 0) 120 V V EBO Emitter-Base Voltage (I C = 0) 7 V IC I CM IB Collector Current 12 A Collector Peak Current 20 A 4 A Base Current I BM Base Peak Current 6 A P tot Total Dissipation at Tc < 25 o C 85 W P tot Total Dissipation at T c < 60 o C 65 T stg Tj June 1997 Storage Temperature Max. Operating Junction Temperature W -65 to +175 o C 175 o C 1/4 BUV27 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.76 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit 3 mA I CER Collector Cut-off Current (R BE = 50Ω) V CE = 240V T c = 125 C I CEX Collector Cut-off Current V CE = 240V VBE = -1.5V T c = 125 C 1 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage o I C = 0.2 A Emitter-Base Voltage (I C = 0) I E = 50mA V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 4A I C = 8A V BE(sat) ∗ Base-Emitter Saturation Voltage V EBO t on ts tf RESISTIVE LOAD Turn-on Time Storage Time Fall Time ts tf INDUCTIVE LOAD Storage time Fall Time ts tf Storage Time Fall Time L = 25mH 120 V 30 V I B = 0.4A I B = 0.8A 0.7 1.5 V V I C = 8A I B = 0.8A 2 V V CC = 90V V BE = - 6V R BB = 3.75Ω I C = 8A I B1 = 0.8A 0.4 0.5 0.12 0.8 1.2 0.25 ms µs µs V CC I B1 LB V CC I B1 LB I C = 8A V BE = - 5V 0.6 0.04 ∗ Pulsed: Pulse duration = 300µs, duty cycle = 2 % 2/4 Min. o = 90V = 0.8A = 1µH = 90V = 0.8A = 1µH 7 IC = 8 A V BE = - 5V T j = 125o C µs µs 2 0.15 µs µs BUV27 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 L4 0.645 13.0 14.0 0.511 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 3/4 BUV27 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4