0.20Ω Ω 400V 23A APT4020BVFR APT4020SVFR APT4020BVFRG* APT4020SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V ® BVFR FREDFET TO -2 47 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • Avalanche Energy Rated • Lower Leakage • TO-247 or Surface Mount D3Pak D3PAK SVFR D G • Fast Recovery Body Diode S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT4020B_SVFR(G) UNIT 400 Volts Drain-Source Voltage 23 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 250 Watts 2 W/°C VGSM PD TJ,TSTG 92 Linear Derating Factor -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 23 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 960 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 400 Volts 23 Amps On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 11.5A) MAX 0.20 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 320V VDSS, VGS = 0V, TC =125°C) Ohms µA ±100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) TYP 3-2006 BVDSS Characteristic / Test Conditions 050-5635 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT4020B_SVFR(G) Test Conditions Characteristic MIN TYP Ciss Input Capacitance VGS = 0V 2650 Coss Output Capacitance VDS = 25V 400 Crss Reverse Transfer Capacitance f = 1 MHz 180 VGS = 10V 120 VDD = 200V ID = 23A @ 25°C 16 60 Turn-on Delay Time VGS = 15V 10 Rise Time VDD = 200V 11 ID = 23A @ 25°C 38 RG = 1.6Ω 7 3 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge t d(on) tr t d(off) Turn-off Delay Time tf Fall Time MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Symbol MIN TYP Continuous Source Current (Body Diode) IS 1 Pulsed Source Current VSD Diode Forward Voltage dv/ Peak Diode Recovery dv/dt dt 23 (Body Diode) ISM 2 MAX 92 (VGS = 0V, IS = -23A) 5 UNIT Amps 1.3 Volts 15 V/ns t rr Reverse Recovery Time (IS = -23A, di/dt = 100A/µs) Tj = 25°C ? Tj = 125°C ? Q rr Reverse Recovery Charge (IS = -23A, di/dt = 100A/µs) Tj = 25°C ? Tj = 125°C ? IRRM Peak Recovery Current (IS = -23A, di/dt = 100A/µs) Tj = 25°C ? Tj = 125°C ? ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.50 RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 40 D=0.5 0.2 0.1 0.1 0.05 Note: 0.02 0.005 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5635 Rev B 3-2006 0.5 0.01 0.01 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 °C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 3.63mH, R = 25Ω, Peak I = 23A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS ≤ -ID Cont. di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C [ ] APT Reserves the right to change, without notice, the specifications and information contained herein. 0.05 UNIT 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves APT4020B_SVFR(G) 50 50 VGS=15V 6.5V 40 30 6V 20 5.5V 5V 10 4.5V ID, DRAIN CURRENT (AMPERES) 30 20 10 TJ = +125°C TJ = -55°C TJ = +25°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 10 5V 1.4 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.3 1.2 VGS=10V 1.1 VGS=20V 1.0 0.9 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 0 10 20 30 40 50 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 15 10 5 25 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 2.5 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 1.1 1.0 0.9 0.8 3-2006 ID, DRAIN CURRENT (AMPERES) 20 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 5.5V 1.15 25 0 20 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 6V 4.5V VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) TJ = +25°C 40 30 0 0 40 80 120 160 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS TJ = -55°C 7V 6.5V 0 50 VGS=10V 40 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5635 Rev B ID, DRAIN CURRENT (AMPERES) VGS=7V, 10V & 15V APT4020B_SVFR(G) 10,000 10µS 50 100µS OPERATION HERE LIMITED BY RDS (ON) 5,000 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 100 1mS 10 5 10mS 100mS DC 1 TC =+25°C TJ =+150°C SINGLE PULSE .5 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) D VDS=80V VDS=200V 12 VDS=320V 8 4 0 500 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE I = I [Cont.] 16 Coss 100 1 5 10 50 100 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D 1,000 Crss .1 20 Ciss 0 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 100 50 TJ =+150°C TJ =+25°C 10 5 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 3 D PAK (SVFR) Package Outline e1 SAC: Tin, Silver, Copper e3 100% Sn 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) Drain 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain (Heat Sink) TO-247 (BVFR) Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) 13.41 (.528) 13.51(.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 0.46 (.018) 0.56 (.022) {3 Plcs} 050-5635 Rev B 3-2006 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.