CHENMKO ENTERPRISE CO.,LTD BAV70DPT SURFACE MOUNT FAST SWITCHING DIODE ARRAY VOLTAGE 75 Volts CURRENT 150 mAmpere APPLICATION * Ultra high speed switching * For general purpose switching application SC-88/SOT-363 FEATURE * Small surface mounting type. (SC-88/SOT-363) * High speed. (TRR=1.5nSec Typ.) * Suitable for high packing density. (1) * Maximum total power disspation is 200mW. * Peak forward current is 300mA. (6) 0.65 1.2~1.4 2.0~2.2 0.65 CONSTRUCTION * Silicon epitaxial planar (4) 0.15~0.35 (3) 1.15~1.35 MARKING * KJA 0.8~1.1 0.08~0.15 0~0.1 0.1 Min. CIRCUIT 6 4 1 3 2.15~2.45 Dimensions in millimeters SC-88/SOT-363 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS SYMBOL BAV70DPT UNITS Maximum Non-Repetitive Peak Reverse Voltage VRM 100 Volts Maximum RMS Voltage VRMS 53 Volts VRRM, VDC 75 Volts IO 150 mAmps Maximum Repetitive Peak Reverse and DC Blocking Voltage Maximum Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current @t=1.0uSec @t=1.0Sec IFSM 2.0 1.0 Amps Typical Junction Capacitance between Terminal (Note 1) CJ 2.0 pF Maximum Reverse Recovery Time (Note 2) TRR 4.0 nSec 625 o Thermal Resistance Junction to Ambient (Note 3) Maximum Operating and Storage Temperature Range R JA TJ,TSTG -65 to +150 C/W o C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS SYMBOL BAV70DPT UNITS Maximum Instantaneous Forward Voltage @IF=1.0mA @IF=10mA @IF=50mA @IF=150mA VF 0.715 0.855 1.00 1.25 Volts Maximum Average Reverse Current @VR=20V @VR=75V @VR=25V, TJ=150OC @VR=75V, TJ=150OC IR 25 2.5 30 50 nAmps uAmps uAmps uAmps NOTES : 1. 2. 3. 4. Measured at 1.0 MHZ and applied reverse voltage of 0 volts. Measured at applied froward current of 10mA and reverse current of 10mA. Device mounted on FR-4 by 1 inch X 0.85 inch X 0.062 inch ESD sensitive product handling required. 2002-9 FIG. 1 - TYPICAL FORWARD CURRENT DERAING CURVE 125 100 75 50 25 200 100 50 Ta=85oC 50oC 25oC 0oC o - 30 C 20 10 5 2 1 0 25 0 50 75 100 125 150 0 0.2 0.6 0.8 1.0 1.4 1.2 FORWARD VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE FIG. 4 - REVERSE CHARACTERISTICS 4 2 1.6 10u f=1MHz Ta=100oC 1u 75oC 50oC 100 25oC 10 0oC 1 - 25oC 0.1 0 0 2 4 6 8 10 12 14 16 18 20 0 10 REVERSE VOLTAGE, (V) 20 30 40 50 60 70 REVERSE VOLTAGE, (V) FIG. 5 - REVERSE RECOVERY TIME FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT 10 REVERSE RECOVERY TIME, (nS) 0.4 AMBIENT TEMPERATURE, (oC) REVERSE CURRENT, (nA) JUNCTION CAPACITANCE, (pF) FIG. 2 - FORWARD CHARACTERISTICS 500 FORWARD CURRENT, (mA) AVERAGE FORWARD CURRENT, (%) RATING CHARACTERISTIC CURVES ( BAV70DPT ) 0.01µF 9 D.U.T. VR=6V 8 5 7 PULSE GENERATOR OUTPUT 50 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 FORWARD CURRENT, (mA) 8 9 10 50 SAMPLING OSCILLOSCOPE 80