FDD13AN06A0_F085
N-Channel PowerTrench® MOSFET
60V, 50A, 13.5mΩ
Features
Applications
• r DS(ON) = 11.5mΩ (Typ.), VGS = 10V, ID = 50A
• Motor / Body Load Control
• Qg(tot) = 22nC (Typ.), VGS = 10V
• ABS Systems
• Low Miller Charge
• Powertrain Management
• Low QRR Body Diode
• Injection Systems
• UIS Capability (Single Pulse and Repetitive Pulse)
• DC-DC converters and Off-line UPS
• Qualified to AEC Q101
• Distributed Power Architectures and VRMs
• RoHS Compliant
• Primary Switch for 12V and 24V systems
Formerly developmental type 82555
DRAIN
(FLANGE)
D
GATE
G
SOURCE
S
TO-252AA
FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
Ratings
60
Units
V
VGS
Gate to Source Voltage
±20
V
50
A
9.9
A
Drain Current
ID
Continuous (TC < 80oC, VGS = 10V)
o
o
Continuous (TA = 25 C, VGS = 10V, R θJA = 52 C/W)
Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy ( Note 1)
Figure 4
A
56
mJ
Power dissipation
115
W
Derate above 25oC
0.77
W/o
-55 to 175
o
Operating and Storage Temperature
C
C
Thermal Characteristics
RθJC
RθJA
RθJA
1.3
o
C/W
Thermal Resistance Junction to Ambient TO-252
100
o
C/W
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
52
o
C/W
Thermal Resistance Junction to Case TO-252
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2010 Fairchild Semiconductor Corporation
FDD13AN06A0_F085 Rev. A
FDD13AN06A0_F085 N-Channel PowerTrench® MOSFET
September 2010
Device Marking
FDD13AN06A0
Device
FDD13AN06A0_F085
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
60
-
-
-
-
1
-
-
250
VGS = ±20V
-
-
±100
nA
-
4
V
V DS = 50V
VGS = 0V
TC = 150oC
μA
On Characteristics
VGS(TH)
rDS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
2
ID = 50A, VGS = 10V
-
0.0115 0.0135
ID = 25A, VGS = 6V
-
0.022
0.034
ID = 50A, VGS = 10V,
TJ = 175oC
-
0.026
0.030
-
1350
-
pF
-
260
-
pF
-
90
-
pF
22
29
nC
Ω
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Qg(TOT)
Total Gate Charge at 10V
VGS = 0V to 10V
Qg(TH)
Threshold Gate Charge
VGS = 0V to 2V
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller” Charge
V DS = 25V, VGS = 0V,
f = 1MHz
VDD = 30V
ID = 50A
Ig = 1.0mA
-
2.6
3.4
nC
-
8.2
-
nC
-
5.6
-
nC
-
6.4
-
nC
ns
Switching Characteristics (VGS = 10V)
tON
Turn-On Time
-
-
130
td(ON)
Turn-On Delay Time
-
9
-
ns
tr
Rise Time
-
77
-
ns
td(OFF)
Turn-Off Delay Time
-
26
-
ns
tf
Fall Time
-
25
-
ns
tOFF
Turn-Off Time
-
-
77
ns
V
V DD = 30V, ID = 50A
V GS = 10V, RGS = 12Ω
Drain-Source Diode Characteristics
ISD = 50A
-
-
1.25
ISD = 25A
-
-
1.0
V
Reverse Recovery Time
ISD = 50A, dISD/dt = 100A/μs
-
-
24
ns
Reverse Recovered Charge
ISD = 50A, dISD/dt = 100A/μs
-
-
15
nC
VSD
Source to Drain Diode Voltage
trr
QRR
Notes:
1: Starting T J = 25°C, L = 45μH, I AS = 50A.
©2010 Fairchild Semiconductor Corporation
FDD13AN06A0_F085 Rev. A
FDD13AN06A0_F085 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
1.2
80
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
CURRENT LIMITED
BY PACKAGE
60
40
20
0.2
0
0
0
25
50
75
100
150
125
25
175
50
75
TC , CASE TEMPERATURE (o C)
100
125
150
175
o
TC, CASE TEMPERATURE ( C)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x Z θJC x RθJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
800
TC = 25oC
IDM, PEAK CURRENT (A)
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
CURRENT AS FOLLOWS:
175 - TC
I = I25
150
VGS = 10V
100
30
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2010 Fairchild Semiconductor Corporation
FDD13AN06A0_F085 Rev. A
FDD13AN06A0_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
100
1000
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
100μs
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10
1
0.1
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
10μs
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
DC
10ms
10
STARTING TJ = 150oC
1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
100
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VDD = 15V
80
TC = 25oC
60
TJ = 175 oC
40
VGS = 20V
80
ID, DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)
STARTING TJ = 25o C
TJ = -55oC
TJ = 25oC
VGS = 10V
60
VGS = 6V
40
20
20
0
0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 5V
3
4
5
6
0
7
0.5
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
1.5
2.0
Figure 8. Saturation Characteristics
2.5
30
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
DRAIN TO SOURCE ON RESISTANCE(mΩ)
1.0
VDS , DRAIN TO SOURCE VOLTAGE (V)
25
VGS = 6V
20
15
VGS = 10V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
VGS = 10V, ID =50A
10
0
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
©2010 Fairchild Semiconductor Corporation
0.5
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD13AN06A0_F085 Rev. A
FDD13AN06A0_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
1.4
1.2
ID = 250μA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
VGS = VDS, I D = 250μA
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
1.0
0.8
0.6
0.4
-80
-40
0
40
80
120
160
1.1
1.0
0.9
200
-80
-40
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
3000
40
80
120
160
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
VGS , GATE TO SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
0
TJ , JUNCTION TEMPERATURE (o C)
CISS = CGS + C GD
1000
COSS ≅ C DS + C GD
CRSS = CGD
100
VDD = 30V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
ID = 50A
ID = 25A
2
VGS = 0V, f = 1MHz
40
0
0.1
1
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
©2010 Fairchild Semiconductor Corporation
60
0
5
10
15
Qg , GATE CHARGE (nC)
20
25
Figure 14. Gate Charge Waveforms for Constant
Gate Current
FDD13AN06A0_F085 Rev. A
FDD13AN06A0_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
VDS
BVDSS
tP
L
VDS
VARY tP TO OBTAIN
IAS
+
RG
REQUIRED PEAK IAS
VDD
VDD
-
VGS
DUT
tP
IAS
0V
0
0.01Ω
tAV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
VDS
VDD
Qg(TOT)
VDS
L
VGS
VGS
VGS = 10V
+
Qgs2
VDD
DUT
VGS = 2V
Ig(REF)
0
Qg(TH)
Qgs
Qgd
Ig(REF)
FDD13AN06A0_F085 N-Channel PowerTrench® MOSFET
Test Circuits and Waveforms
0
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
VDS
tON
tOFF
td(ON)
td(OFF)
RL
tf
tr
VDS
90%
90%
+
VGS
VDD
-
10%
10%
0
DUT
90%
RGS
VGS
50%
50%
PULSE WIDTH
VGS
0
Figure 19. Switching Time Test Circuit
©2010 Fairchild Semiconductor Corporation
10%
Figure 20. Switching Time Waveforms
FDD13AN06A0_F085 Rev. A
(T
–T )
JM
A
P D M = ----------------------------R θ JA
(EQ. 1)
In using surface mount devices such as the TO-252
package, the environment in which it is applied will have a
significant influence on the part’s current and maximum
power dissipation ratings. Precise determination of P DM is
complex and influenced by many factors:
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
125
RθJA = 33.32+ 23.84/(0.268+Area) EQ.2
RθJA = 33.32+ 154/(1.73+Area) EQ.3
100
RθJA (oC/W)
The maximum rated junction temperature, TJM , and the
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, PDM , in an
application.
Therefore the application’s ambient
temperature, TA (oC), and thermal resistance RθJA (oC/W)
must be reviewed to ensure that TJM is never exceeded.
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
75
50
25
0.01
(0.0645)
0.1
(0.645)
1
10
(6.45)
(64.5)
AREA, TOP COPPER AREA in 2 (cm2)
Figure 21. Thermal Resistance vs Mounting
Pad Area
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild provides thermal information to assist the
designer’s preliminary application evaluation. Figure 21
defines the RθJA for the device as a function of the top
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction temperature or power dissipation. Pulse
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
maximum transient thermal impedance curve.
Thermal resistances corresponding to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in inches square and equation 3 is for area in centimeters
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.
R
θ JA
23.84
( 0.268 + Area )
= 33.32 + -------------------------------------
(EQ. 2)
Area in Inches Squared
R
θ JA
154
( 1.73 + Area )
= 33.32 + ----------------------------------
(EQ. 3)
Area in Centimeters Squared
©2010 Fairchild Semiconductor Corporation
FDD13AN06A0_F085 Rev. A
FDD13AN06A0_F085 N-Channel PowerTrench® MOSFET
Thermal Resistance vs. Mounting Pad Area
.SUBCKT FDD13AN06A0 2 1 3 ; rev August 2002
Ca 12 8 5.1e-10
Cb 15 14 5.8e-10
Cin 6 8 1.3e-9
LDRAIN
DPLCAP
10
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
RLDRAIN
RSLC1
51
5
51
EVTHRES
+ 19 8
+
LGATE
GATE
1
ESLC
11
+
17
EBREAK 18
-
50
RDRAIN
6
8
ESG
DBREAK
+
RSLC2
Ebreak 11 7 17 18 65.40
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
DRAIN
2
5
EVTEMP
RGATE + 18 22
9
20
21
16
DBODY
MWEAK
6
MMED
MSTRO
RLGATE
Lgate 1 9 5.2e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 2.14e-9
LSOURCE
CIN
8
7
SOURCE
3
RSOURCE
RLSOURCE
RLgate 1 9 52
RLdrain 2 5 10
RLsource 3 7 21.4
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
S1A
12
S2A
13
8
17
18
RVTEMP
S2B
13
CB
6
8
5
8
EDS
-
19
VBAT
+
IT
14
+
+
EGS
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 3.1e-3
Rgate 9 20 3.71
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 5.5e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
15
14
13
S1B
CA
RBREAK
-
8
22
RVTHRES
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*160),6))}
.MODEL DbodyMOD D (IS=1.0E-11 N=1.08 RS=3.5e-3 TRS1=2.2e-3 TRS2=2.5e-9
+ CJO=.9e-9 M=5.1e-1 TT=1e-9 XTI=3.9)
.MODEL DbreakMOD D (RS=1.5e-1 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=4.1e-10 IS=1e-30 N=10 M=0.45)
.MODEL MmedMOD NMOS (VTO=3.5 KP=6 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=3.71)
.MODEL MstroMOD NMOS (VTO=4.3 KP=50 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=2.91 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=3.71e+1 RS=0.1)
.MODEL RbreakMOD RES (TC1=9e-4 TC2=-5e-7)
.MODEL RdrainMOD RES (TC1=1.3e-2 TC2=5.2e-5)
.MODEL RSLCMOD RES (TC1=1.8e-3 TC2=1.7e-5)
.MODEL RsourceMOD RES (TC1=1e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-5.3e-3 TC2=-1.0e-5)
.MODEL RvtempMOD RES (TC1=-2.5e-3 TC2=1e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-5 VOFF=-2)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-5)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=.5 VOFF=-1.5)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
©2010 Fairchild Semiconductor Corporation
FDD13AN06A0_F085 Rev. A
FDD13AN06A0_F085 N-Channel PowerTrench® MOSFET
PSPICE Electrical Model
rev August 2002
template FDD13AN06A0 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=1.0e-11,nl=1.08,rs=3.5e-3,trs1=2.2e-3,trs2=2.5e-9,cjo=.9e-9,m=5.1e-1,tt=1e-9,xti=3.9)
dp..model dbreakmod = (rs=1.5e-1,trs1=1e-3,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=4.1e-10,isl=10e-30,nl=10,m=0.45)
m..model mmedmod = (type=_n,vto=3.5,kp=6,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=4.3,kp=50,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=2.91,kp=0.05,is=1e-30, tox=1,rs=0.1)
LDRAIN
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-5,voff=-2)
DPLCAP 5
DRAIN
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-2,voff=-5)
2
10
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1.5,voff=.5)
RLDRAIN
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=.5,voff=-1.5)
RSLC1
51
c.ca n12 n8 = 5.1e-10
RSLC2
c.cb n15 n14 = 5.8e-10
ISCL
c.cin n6 n8 = 1.3e-9
spe.ebreak n11 n7 n17 n18 = 65.40
GATE
spe.eds n14 n8 n5 n8 = 1
1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
RDRAIN
6
8
ESG
EVTHRES
+ 19 8
+
LGATE
DBREAK
50
-
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
EVTEMP
RGATE + 18 22
9
20
21
11
DBODY
16
MWEAK
6
EBREAK
+
17
18
-
MMED
MSTRO
RLGATE
CIN
8
LSOURCE
7
SOURCE
3
RSOURCE
RLSOURCE
i.it n8 n17 = 1
S2A
S1A
12
l.lgate n1 n9 = 5.2e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 2.14e-9
13
8
res.rlgate n1 n9 = 52
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 21.4
15
14
13
S1B
CA
RBREAK
17
18
RVTEMP
S2B
13
CB
+
6
8
EGS
-
19
IT
14
+
VBAT
5
8
EDS
-
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
+
8
22
RVTHRES
res.rbreak n17 n18 = 1, tc1=9e-4,tc2=-5e-7
res.rdrain n50 n16 = 3.1e-3, tc1=1.3e-2,tc2=5.2e-5
res.rgate n9 n20 = 3.71
res.rslc1 n5 n51 = 1e-6, tc1=1.8e-3,tc2=1.7e-5
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 5.5e-3, tc1=1e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-5.3e-3,tc2=-1.0e-5
res.rvtemp n18 n19 = 1, tc1=-2.5e-3,tc2=1e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/160))** 6))
}}
©2010 Fairchild Semiconductor Corporation
FDD13AN06A0_F085 Rev. A
FDD13AN06A0_F085 N-Channel PowerTrench® MOSFET
SABER Electrical Model
th
JUNCTION
REV 22 August 2002
FDD13AN06A0T
CTHERM1 TH 6 9.7e-4
CTHERM2 6 5 6.2e-3
CTHERM3 5 4 4.6e-3
CTHERM4 4 3 4.9e-3
CTHERM5 3 2 8e-3
CTHERM6 2 TL 4.2e-2
RTHERM1
CTHERM1
6
RTHERM1 TH 6 5.24e-2
RTHERM2 6 5 10.08e-2
RTHERM3 5 4 4.28e-1
RTHERM4 4 3 1.8e-1
RTHERM5 3 2 1.9e-1
RTHERM6 2 TL 2.1e-1
RTHERM2
CTHERM2
5
SABER Thermal Model
SABER thermal model FDD13AN06A0T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =9.7e-4
ctherm.ctherm2 6 5 =6.2e-3
ctherm.ctherm3 5 4 =4.6e-3
ctherm.ctherm4 4 3 =4.9e-3
ctherm.ctherm5 3 2 =8e-3
ctherm.ctherm6 2 tl =4.2e-2
rtherm.rtherm1 th 6 =5.24e-2
rtherm.rtherm2 6 5 =10.08e-2
rtherm.rtherm3 5 4 =4.28e-1
rtherm.rtherm4 4 3 =1.8e-1
rtherm.rtherm5 3 2 =1.9e-1
rtherm.rtherm6 2 tl =2.1e-1
}
RTHERM3
CTHERM3
4
RTHERM4
CTHERM4
3
RTHERM5
CTHERM5
2
RTHERM6
CTHERM6
tl
©2010 Fairchild Semiconductor Corporation
CASE
FDD13AN06A0_F085 Rev. A
FDD13AN06A0_F085 N-Channel PowerTrench® MOSFET
PSPICE Thermal Model
AccuPower¥
Auto-SPM¥
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CorePLUS¥
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CTL¥
Current Transfer Logic¥
DEUXPEED®
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Rev. I48
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FDD13AN06A0_F085 N-Channel PowerTrench® MOSFET
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