BDX 64, A, B, C PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage VBE=-1.5 V IC(RMS) IC Collector Current ICM Value BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C COMSET SEMICONDUCTORS Unit -60 -80 -100 -120 -60 -80 -100 -120 V V -5.0 V -12 A -16 1/5 BDX 64, A, B, C Symbol Value Unit Base Current BDX64 BDX64A BDX64B BDX64C 0.2 A PT Power Dissipation BDX64 BDX64A BDX64B BDX64C 117 Watts W/°C TJ Junction Temperature -55 to +200 °C TS Storage Temperature BDX64 BDX64A BDX64B BDX64C IB Ratings @ TC = 25° THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case BDX64 BDX64A BDX64B BDX64C COMSET SEMICONDUCTORS Value Unit 1.5 °C/W 2/5 BDX 64, A, B, C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) ICEO IEBO Ratings Test Condition(s) Collector-Emitter Breakdown Voltage (*) Min Typ Mx Unit BDX64 -60 - - BDX64A -80 - V IC=-0.1 A, IB=0, L=25mH BDX64B -100 - - BDX64C -120 - - VCE=-30 V BDX64 - - VCE=-40 V BDX64A - - Collector Cutoff Current Emitter Cutoff Current VCE=-50 V BDX64B - - VCE=-60 V BDX64C - - VBE=-5 V BDX64 BDX64A BDX64B BDX64C - - COMSET SEMICONDUCTORS -1.0 mA -5.0 mA 3/5 BDX 64, A, B, C Symbol Ratings Test Condition(s) Min Typ Mx Unit - - 0.2 VCBO=-60 V TCASE=150°C - - 2 VCBO=-80 V - - 0.2 VCBO=-60 V BDX64 BDX64A ICBO Collector-Base Cutoff Current - VCBO=-80 V TCASE=150°C - - 2 VCBO=-100 V - - 0.2 VCBO=-100 V TCASE=150°C - - 2 VCBO=-120 V - - 0.2 - - 2 - - -2 V - 1.8 - V - - -2.5 V - 60 - KHz BDX64B BDX64C VCBO=-120 V TCASE=150° VCE(SAT) Collector-Emitter saturation Voltage (*) IC=-5.0 A, IB=-20 mA VF Forward Voltage (pulse method) IF=5 A VBE Fh21e Base-Emitter Voltage (*) Forward current transfer ratio Cutoff frequency IC=-5.0 A, VCE=-3V VCE=3 V, IC=5 A COMSET SEMICONDUCTORS BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C 4/5 BDX 64, A, B, C Symbol fT Ratings Test Condition(s) Transition Frequency VCE=-3 V, IC=-5 A, f=1 MHz VCE=-3 V, IC=-1 A Static forward current transfer ratio (*) h21E VCE=-3 V, IC=-5 A VCE=-3 V, IC=-12 A BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C Min Typ Mx Unit - 7 - - 1500 - 1000 - - - 750 - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Collector Emitter COMSET SEMICONDUCTORS 5/5 MHz -