ACE ACE1550B P-channel enhancement mode field effect transistor Datasheet

ACE1550B
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE1550B combines advanced trench MOSFET technology with a low resistance package to
provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones,
Pagers.
Features





VDS(V) =-20V
ID=-0.7A
RDS(ON)<620mΩ (VGS=-4.5V)
RDS(ON)<860mΩ (VGS=-2.5V)
RDS(ON)<1450mΩ (VGS=-1.8V)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current * AC
TA=25℃
TA=70℃
Pulsed Drain Current * B
Power Dissipation
ID
IDM
TA=25℃
TA=70℃
PD
-0.7
-0.56
-1
0.27
0.16
Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150
A
A
W
O
C
Packaging Type
SOT-523
VER 1.2
1
ACE1550B
P-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE1550B XX + H
Halogen - free
Pb - free
KM : SOT-523
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Conditions
Min.
Typ.
Max. Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
Drain-Source On-Resistance
V(BR)DSS
VGS=0V, ID=-250 uA
-20
VGS(th)
VDS=VGS, IDS=-250uA
-0.3
IGSS
VDS=0V,VGS=±12V
100
nA
IDSS
VDS=-20V, VGS=0V
1
uA
RDS(ON)
V
-0.8
VGS=-4.5V, ID=-0.6A
500
620
VGS=-2.5V, ID=-0.5A
700
860
VGS=-1.8V, ID=-0.4A
1000
1450
Forward Transconductance
gfs
VDS=-10V,ID=-0.4A
1
Diode Forward Voltage
VSD
ISD=-0.15A, VGS=0V
-0.65
-1.2
1.0
1.3
mΩ
S
V
Switching
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
0.3
td(on)
10
15
10
15
40
60
30
50
70
100
Turn-On Time
Turn-Off Time
tr
td(off)
VDS=-10V, VGS=-4.5V, ID=-0.25A
VGS=-4.5V, ID=-0.2A, VDS=-10V,
RG=10Ω
tf
0.1
nC
nS
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
REVERSE Transfer
Capacitance
Crss
VGS=0V, VDS=-10V, f=1MHz
20
pF
10
VER 1.2
2
ACE1550B
P-Channel Enhancement Mode Field Effect Transistor
Note:
1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The RθJA is the sum of the thermal impedence from junction to lead R θJA and lead to ambient .
4. The static characteristics are obtained using <300 μs pulses, duty cycle 0.5% max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The SOA curve provides a single pulse rating.
Typical Performance Characteristics
VER 1.2
3
ACE1550B
P-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
4
ACE1550B
P-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
5
ACE1550B
P-Channel Enhancement Mode Field Effect Transistor
Packing Information
SOT-523
Unit:mm
Dim.
Min.
Typ.
Max.
A
0.1
0.2
0.3
B
1.10
1.20
1.30
C
0.17
0.22
0.27
D
0.95
1.00
1.05
E
0.09
0.125
0.16
F
0.525
0.575
0.60
G
1.5
1.6
1.7
VER 1.2
6
ACE1550B
P-Channel Enhancement Mode Field Effect Transistor
+Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
7
Similar pages