AOL1446 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1446 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOL1446 is Pb-free (meets ROHS & Sony 259 specifications). AOL1446L is a Green Product ordering option. AOL1446 and AOL1446L are electrically identical. VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7mΩ (VGS = 10V) RDS(ON) < 11mΩ (VGS = 4.5V) TM Ultra SO-8 Top View Fits SOIC8 footprint ! D D Bottom tab connected to drain S G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS 30 Drain-Source Voltage VGS ±20 Gate-Source Voltage Continuous Drain 85 TC=25°C G B Current 70 ID TC=100°C IDM 200 Pulsed Drain Current Continuous Drain TA=25°C 14 G Current IDSM 11 TA=70°C C Avalanche Current IAR 30 C Repetitive avalanche energy L=0.3mH EAR 135 TC=25°C 100 PD Power Dissipation B TC=100°C 50 A Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A A A mJ W 2.5 1.6 -55 to 175 TA=25°C PDSM TA=70°C Junction and Storage Temperature Range TJ, TSTG Power Dissipation Units V V RθJA RθJC Typ 19.5 48 1 W °C Max 25 60 1.5 Units °C/W °C/W °C/W AOL1446 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250μA, VGS=0V VDS=24V, V GS=0V 30 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance gFS VSD IS VGS=4.5V, ID=20A VDS=5V, ID=20A Forward Transconductance Diode Forward Voltage IS=1A,V GS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Typ Max 0.005 1 5 100 3 V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250μA VGS=10V, V DS=5V VGS=10V, ID=20A 1 100 TJ=125°C VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=20A VGS=10V, V DS=15V, R L=0.75Ω, RGEN=3Ω IF=20A, dI/dt=100A/μs IF=20A, dI/dt=100A/μs Units 2.3 μA nA V A 5 6.7 8.4 60 0.72 7 8.1 11 mΩ 1 85 S V A 1325 535 155 0.95 1600 26 13.5 3.2 6.6 7.2 12.5 22 6 29.7 29 32 18 1.5 10 18 33 9 36 36 mΩ pF pF pF Ω nC nC nC nC ns ns ns ns ns nC A: The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOL1446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 50 4.0V 50 40 30 ID(A) ID (A) 40 VDS=5V 3.5V 20 125°C 30 25°C 20 10 10 VGS=3V 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 10 1.8 9 VGS=4.5V Normalized On-Resistance RDS(ON) (mΩ) 2.5 8 7 6 VGS=10V 5 ID=20A 1.6 VGS=10V 1.4 VGS=4.5V 1.2 1 4 0 10 20 30 40 50 0.8 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 20 100 125 150 175 1.0E+02 125°C 1.0E+01 16 1.0E+00 ID=20A 12 IS (A) RDS(ON) (mΩ) 75 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 125°C 8 1.0E-01 25°C 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 4 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOL1446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2400 10 VDS=15V ID=20A 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 1600 Ciss 1200 Coss 800 400 0 0 5 10 15 20 25 Crss 0 30 0 Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) 100 10μs 1ms 10 DC 0.1 1 10 100 30 T J(Max)=175°C T A=25°C 200 Figure 9: Maximum Forward Biased Safe Operating Area (Note H) 10 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJC=1.5°C/W PD 0.1 T on Single Pulse 0.01 0.00001 25 100 T J(Max)=175°C T A=25°C 0.1 ZθJc Normalized Transient Thermal Resistance 20 300 100μs 1 15 400 RDS(ON) limited 1 10 VDS (Volts) Figure 8: Capacitance Characteristics Power (W) 1000 5 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOL1446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 T A=25°C 80 Power Dissipation (W) ID(A), Peak Avalanche Current 100 60 40 20 0 0.00001 0.0001 0.001 90 60 30 0 0.01 0 25 100 100 80 80 60 40 20 75 100 125 150 175 60 40 20 0 0 25 50 75 100 125 150 0 0.01 175 TCASE (°C) Figure 14: Current De-rating (Note B) 10 ZθJA Normalized Transient Thermal Resistance 50 TCASE (°C) Figure 13: Power De-rating (Note B) Power (W) Current rating ID(A) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 0.001 0.00001 PD D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=60 °C/W 0.0001 0.001 0.01 T on 0.1 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000