AP18T20GH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristics BVDSS 200V RDS(ON) ID 175mΩ 13.4A G ▼ RoHS Compliant & Halogen-Free S Description AP18T20 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G D S TO-252(H) The TO-252 package is widely preferred for commercial-industrial surface mount applications and using infrared reflow technique and suited for high current application due to the low connection resistance. Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) . Symbol Parameter Rating Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Drain Current, VGS @ 10V 13.4 A ID@TC=100℃ Drain Current, VGS @ 10V 8.5 A 40 A 83.3 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Data & specifications subject to change without notice Value Unit 1.5 ℃/W 62.5 ℃/W 1 201501132 AP18T20GH-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance 2 Test Conditions Min. Typ. 200 - - V VGS=10V, ID=8A - - 175 mΩ VGS=4.5V, ID=5A - - 185 mΩ VGS=0V, ID=250uA Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=8A - 24 - S IDSS Drain-Source Leakage Current VDS=160V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=8A - 66 105 nC Qgs Gate-Source Charge VDS=160V - 8.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 21 - nC td(on) Turn-on Delay Time VDD=100V - 12 - ns tr Rise Time ID=8A - 14 - ns td(off) Turn-off Delay Time RG=3.3Ω - 50 - ns tf Fall Time VGS=10V - 30 - ns Ciss Input Capacitance VGS=0V - 2900 4640 pF Coss Output Capacitance VDS=25V - 130 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF Rg Gate Resistance f=1.0MHz - 1.2 2.4 Ω Min. Typ. IS=8A, VGS=0V - - 1.3 V . Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=8A, VGS=0V, - 110 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 470 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP18T20GH-HF 32 25 10V 7.0V 6.0V 5.0V V G =4.0V 24 10V 7.0V 6.0V 5.0V V GS =4.0V o T C =150 C 20 ID , Drain Current (A) ID , Drain Current (A) T C = 25 o C 16 15 10 8 5 0 0 0 4 8 12 16 0 20 4 8 12 16 20 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.8 1.6 I D =8A V GS =10V I D =1mA 2.4 1.2 . 1 Normalized RDS(ON) Normalized BVDSS 1.4 2 1.6 1.2 0.8 0.8 0.4 0.6 0 -50 0 50 100 150 -50 o 0 50 100 150 o T j , Junction Temperature ( C) T j , Junction Temperature ( C ) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 2 8 I D =250uA 1.6 IS(A) Normalized VGS(th) 6 4 T j =150 o C 1.2 0.8 o T j =25 C 2 0.4 0 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP18T20GH-HF f=1.0MHz 4000 I D =8A V DS =160V 10 3000 C iss 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 2000 4 1000 2 C oss C rss 0 0 0 20 40 60 80 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Operation in this area limited by RDS(ON) 10 ID (A) 100us . 1ms 10ms 100ms DC 1 T c =25 o C Single Pulse Normalized Thermal Response (Rthjc) 100 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0 0.1 1 10 100 1000 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance 16 ID , Drain Current (A) VG QG 12 10V QGS 8 QGD 4 Charge Q 0 25 50 75 100 T C , Case Temperature ( 125 o 150 C) Fig 11. Drain Current v.s. Case Temperature Fig 12. Gate Charge Waveform 4 AP18T20GH-HF MARKING INFORMATION 18T20GH Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 5