UTC DTA114TG-AN3-6-R Digital transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
DTA114T
PNP SILICON TRANSISTOR
DIGITAL TRANSISTORS
(BUILT- IN BIAS RESISTORS)
FEATURES
„
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow positive input.
EQUIVALENT CIRCUIT
„
B
R1
C
E
„
ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
DTA114TL-AE3-6-R
DTA114TG-AE3-6-R
DTA114TL-AL3-6-R
DTA114TG-AL3-6-R
DTA114TL-AN3-6-R
DTA114TG-AN3-6-R
„
Package
SOT-23
SOT-323
SOT-523
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
MARKING
ofwww.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R206-061.C
DTA114T
„
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA = 25℃)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-100
mA
SOT-23
200
Collector Power Dissipation
PC
mW
SOT-323/SOT-523
150
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55~+150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS (TA= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
BVCBO
IC=-50μA
-50
Collector-Emitter Breakdown Voltage
BVCEO
IC=-1mA
-50
Emitter-Base Breakdown Voltage
BVEBO
IE=-50μA
-5
Collector-Emitter Saturation Voltage
VCE(SAT) IC=-10mA, IB=-1mA
Collector Cutoff Current
ICBO
VCB=-50V
Emitter Cutoff Current
IEBO
VEB=-4V
DC Current Gain
hFE
VCE=-5V, IC=-1mA
100
Input Resistance
R1
7
Transition Frequency
fT
VCE=-10V, IE=5mA,f=100MHz (Note)
Note: Transition frequency of the device
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP MAX UNIT
V
V
V
-0.3
V
-0.5
μA
-0.5
μA
250 600
10
13
kΩ
250
MHz
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Collector Saturation Voltage, VCE(SAT) (mV)
TYPICAL CHARACTERISTICS
DC Current Gain, hFE
■
PNP SILICON TRANSISTOR
UTC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-061.C
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