BUK92150-55A TrenchMOS™ logic level FET Rev. 03 — 30 May 2002 Product data M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK92150-55A in SOT428 (D-PAK). 2. Features ■ ■ ■ ■ TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications ■ Automotive and general purpose power switching: ◆ 12 V and 24 V loads ◆ Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base; connected to drain (d) Simplified outline Symbol d mb g MBB076 2 1 Top view 3 MBK091 SOT428 (D-PAK) s BUK92150-55A Philips Semiconductors TrenchMOS™ logic level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit - 55 V VDS drain-source voltage (DC) ID drain current (DC) Tmb = 25 °C; VGS = 5 V - 11 A Ptot total power dissipation Tmb = 25 °C - 36 W Tj junction temperature - 175 °C RDSon drain-source on-state resistance Tj = 25 °C; VGS = 5 V; ID = 5 A 120 140 Tj = 25 °C; VGS = 4.5 V; ID = 5 A - 155 Tj = 25 °C; VGS = 10 V; ID = 5 A 97 125 Tj = 175 °C; VGS = 5 V; ID = 5 A - 280 mΩ mΩ mΩ mΩ Min Max Unit - 55 V - 55 V 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage (DC) VDGR drain-gate voltage (DC) VGS gate-source voltage (DC) ID drain current (DC) Conditions RGS = 20 kΩ - ±15 V Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 - 11 A Tmb = 100 °C; VGS = 5 V; Figure 2 - 7.8 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 44 A Ptot total power dissipation Tmb = 25 °C; Figure 1 - 36 W Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C Source-drain diode IDR reverse drain current (DC) Tmb = 25 °C - 11 A IDRM peak reverse drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 44 A unclamped inductive load; ID = 11 A; VDS ≤ 55 V; VGS = 5 V; RGS = 50 Ω; starting Tj = 25 °C - 16 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09725 Product data Rev. 03 — 30 May 2002 2 of 13 BUK92150-55A Philips Semiconductors TrenchMOS™ logic level FET 03na19 120 03nf49 12 ID (A) Pder (%) 80 8 40 4 0 0 0 50 100 150 200 Tmb (°C) 0 50 100 150 200 Tmb (°C) VGS ≥ 4.5 V P tot P der = ---------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. 102 03nf47 ID (A) tp = 10 µs Limit RDSon = VDS/ID 10 100 µs 1 ms DC 1 10 ms 100 ms 10-1 1 10 VDS (V) 102 Tmb = 25 °C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09725 Product data Rev. 03 — 30 May 2002 3 of 13 BUK92150-55A Philips Semiconductors TrenchMOS™ logic level FET 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Rth(j-a) Rth(j-mb) Conditions Min Typ Max Unit thermal resistance from junction to ambient - 71.4 - K/W thermal resistance from junction to mounting Figure 4 base - - 4.1 K/W 7.1 Transient thermal impedance 03nf48 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 0.05 0.02 10-1 δ= P single shot tp T t tp T 10-2 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09725 Product data Rev. 03 — 30 May 2002 4 of 13 BUK92150-55A Philips Semiconductors TrenchMOS™ logic level FET 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = 25 °C 55 - - V Tj = −55 °C 50 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 drain-source leakage current Tj = 25 °C 1 1.5 2 V Tj = 175 °C 0.5 - - V Tj = −55 °C - - 2.3 V Tj = 25 °C - 0.05 10 µA Tj = 175 °C - - 500 µA - 2 100 nA Tj = 25 °C - 120 140 mΩ Tj = 175 °C - - 280 mΩ VGS = 4.5 V; ID = 5 A; - - 155 mΩ VGS = 10 V; ID = 5 A; - 97 125 mΩ VGS = 5 V; VDD = 44 V; ID = 5 A; Figure 14 - 6 - nC - 0.72 - nC - 2.6 - nC - 240 338 pF - 50 65 pF - 40 58 pF - 8 - ns VDS = 55 V; VGS = 0 V IGSS gate-source leakage current VGS = ±10 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 5 V; ID = 5 A; Figure 7 and 8 Dynamic characteristics Qg(tot) total gate charge Qgs gate-to-source charge Qgd gate-to-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time - 57 - ns td(off) turn-off delay time - 16 - ns tf fall time - 13 - ns Ld internal drain inductance measured from drain to centre of die - 2.5 - nH Ls internal source inductance measured from source lead to source bond pad - 7.5 - nH VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 VDD = 20 V; RL = 3.3 Ω; VGS = 5 V; RG = 10 Ω; © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09725 Product data Rev. 03 — 30 May 2002 5 of 13 BUK92150-55A Philips Semiconductors TrenchMOS™ logic level FET Table 5: Characteristics…continued Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit - 0.85 1.2 V Source-drain diode VSD source-drain (diode forward) voltage IS = 15 A; VGS = 0 V; Figure 15 trr reverse recovery time Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 30 V 24 - ns 26 - nC © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09725 Product data - Rev. 03 — 30 May 2002 6 of 13 BUK92150-55A Philips Semiconductors TrenchMOS™ logic level FET 03nf44 16 10 5 ID (A) 03nf43 140 label is VGS (V) RDSon (mΩ) 4 12 3.8 120 3.6 8 3.4 3.2 100 3 4 2.8 2.6 2.4 2.2 0 0 2 4 80 6 8 10 VDS (V) Tj = 25 °C 0 10 VGS (V) 15 Tj = 25 °C; ID = 5 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 03nf45 300 5 3 3.2 RDSon (mΩ) 03ne89 2 3.4 a 3.6 250 1.5 3.8 1 200 4 150 0.5 VGS = 5 V 0 100 2 6 10 ID (A) 14 -60 60 120 180 Tj (°C) Tj = 25 °C R DSon a = --------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09725 Product data 0 Rev. 03 — 30 May 2002 7 of 13 BUK92150-55A Philips Semiconductors TrenchMOS™ logic level FET 03aa33 2.5 max ID (A) 10-2 typ 10-3 VGS(th) (V) 2 1.5 03aa36 10-1 min min 1 10-5 0 10-6 0 60 max 10-4 0.5 -60 typ 120 o Tj ( C) 180 0 1 2 VGS (V) 3 Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. 03nf41 10 Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03nf46 600 gfs (S) C (pF) 8 400 Ciss 6 4 Coss 200 2 Crss 0 0 0 4 8 12 ID (A) 16 10-2 1 102 10 VDS (V) Tj = 25 °C; VDS = 25 V VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09725 Product data 10-1 Rev. 03 — 30 May 2002 8 of 13 BUK92150-55A Philips Semiconductors TrenchMOS™ logic level FET 03nf42 8 03nf40 5 VGS (V) ID (A) 4 6 3 VDD = 14 V VDD = 44 V 4 2 2 Tj = 175 °C Tj = 25 °C 1 0 0 0 1 2 3 VGS (V) 4 0 2 4 QG (nC) 6 Tj = 25 °C; ID = 5 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. 03nf39 30 IS (A) 20 10 Tj = 175 °C Tj = 25 °C 0 0.0 0.5 1.0 1.5 2.0 VSD (V) VGS = 0 V Fig 15. Reverse diode current as a function of reverse diode voltage; typical values. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09725 Product data Rev. 03 — 30 May 2002 9 of 13 BUK92150-55A Philips Semiconductors TrenchMOS™ logic level FET 9. Package outline Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 seating plane y A E A2 A A1 b2 E1 mounting base D1 D HE L2 2 L1 L 1 3 b1 w M A b c e e1 0 10 20 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1(1) A2 b b1 b2 c D D1 min. E mm 2.38 2.22 0.65 0.45 0.93 0.73 0.89 0.71 1.1 0.9 5.46 5.26 0.4 0.2 6.22 5.98 4.0 6.73 6.47 E1 e e1 4.81 2.285 4.57 4.45 HE L L1 min. L2 w y max. 10.4 9.6 2.95 2.55 0.5 0.9 0.5 0.2 0.2 Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC JEITA TO-252 SC-63 EUROPEAN PROJECTION ISSUE DATE 99-09-13 01-12-11 Fig 16. SOT428 (D-PAK). © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09725 Product data Rev. 03 — 30 May 2002 10 of 13 BUK92150-55A Philips Semiconductors TrenchMOS™ logic level FET 10. Revision history Table 6: Revision history Rev Date 03 20020530 CPCN Description - Product data (9397 750 09725) Modifications: • RDSon Max @ 5 V lowered to 140 mΩ. Values @ 10 V and 4.5 V adjusted accordingly. 02 20010703 - Product data; second version. 01 20000690 - Product data; initial manuscript version. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09725 Product data Rev. 03 — 30 May 2002 11 of 13 BUK92150-55A Philips Semiconductors TrenchMOS™ logic level FET 11. Data sheet status Data sheet status[1] Product status[2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09725 Rev. 03 — 30 May 2002 12 of 13 Philips Semiconductors BUK92150-55A TrenchMOS™ logic level FET Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 © Koninklijke Philips Electronics N.V. 2002. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 30 May 2002 Document order number: 9397 750 09725