EIC7179-8 7.10-7.90GHz 8-Watt Internally-Matched Power FET UPDATED 08/21/2007 FEATURES • • • • • • • 7.10–7.90GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL 100% Tested for DC, RF, and RTH Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) IDSS PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 7.10-7.90GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 7.10-7.90GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 7.10-7.90GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 2200mA f = 7.10-7.90GHz Drain Current at 1dB Compression f = 7.10-7.90GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 7.90GHz Saturated Drain Current VDS = 3 V, VGS = 0 V VP Pinch-off Voltage SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 TYP 38.5 39.5 dBm 7.5 8.5 dB MAX UNITS ±0.6 dB 30 2400 -43 VDS = 3 V, IDS = 40 mA Thermal Resistance RTH MIN 3 % 2800 mA -46 dBc 4000 4500 -2.5 -4.0 3.5 mA V o 4.0 C/W Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS Vds Vgs Igf Igr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 CONTINUOUS2 15V 10V -5V -4V 96mA 28.8mA -19.2mA -4.8mA 39dBm @ 3dB Compression 175C 175C -65C to +175C -65C to +175C 37.5W 37.5W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised October 2007 EIC7179-8 7.10-7.90GHz 8-Watt Internally-Matched Power FET UPDATED 08/21/2007 PERFORMANCE DATA Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 2200mA S11 and S22 .0 0 .4 -0 S[1,1] -3 * .0 EIC7179-8 0. 4 10 0 0 4. S[2,2] * EIC7179-8 S21 and S12 (dB) 0 3. 0 5.0 2 -5. -0. -4 . 0.2 -10.0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10.0 0 S21 and S12 20 2. 1.0 0.8 .6 -2 6 0. -0 -0.8 -1.0 Swp Max 8.5GHz DB(|S[2,1]|) * EIC7179-8 0 0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 10.0 5.0 DB(|S[1,2]|) * EIC7179-8 -10 -10.0 10.0 2 4. .0 -3 .0 3. -30 -1.0 6.5 -2 0.8 1.0 -0.8 6 -0 . 0. 0 0 0 6 .0 0. 4 -4 5.0 .4 -0 2. FREQ -20 0.2 -5. 0 -0. --- S11 --- 7 7.5 Frequency (GHz) Swp Min 6.5GHz --- S21 --- --- S12 --- 8 8.5 --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 6.25 0.880 -49.670 2.147 58.460 0.045 1.160 0.220 -119.050 6.50 0.803 -70.860 2.561 25.780 0.061 -30.980 0.255 155.400 6.75 0.693 -96.200 2.913 -8.850 0.078 -66.370 0.409 103.720 7.00 0.517 -126.330 3.150 -44.530 0.096 -100.870 0.533 66.370 7.25 0.330 -162.030 3.324 -79.880 0.112 -136.570 0.576 32.440 7.50 0.165 137.750 3.420 -117.150 0.122 -173.260 0.545 -2.360 7.75 0.160 26.960 3.298 -154.880 0.129 150.260 0.470 -43.000 8.00 0.285 -38.600 3.055 167.050 0.126 113.450 0.399 -92.540 8.25 0.398 -86.640 2.676 129.920 0.115 77.180 0.413 -144.320 8.50 0.492 -128.940 2.241 93.730 0.099 43.170 0.505 173.770 8.75 0.570 -165.600 1.765 59.440 0.081 10.010 0.606 143.580 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 4 Revised October 2007 EIC7179-8 7.10-7.90GHz 8-Watt Internally-Matched Power FET UPDATED 08/21/2007 Power De-rating Curve and IM3 Definition Power Dissipation vs. Temperature THIRD-ORDER INTERCEPT POINT IP3 40 30 IP3 = Pout + IM3/2 Potentially Unsafe Operating Region 25 20 Safe Operating Region 15 f1 or f2 Pout [S.C.L.] (dBm) Total Power Dissipation (W) 35 Pout IM3 Pin IM3 f1 f2 (2f1-f2) f1 f2 (2f2-f1) 10 (2f2 - f1) or (2f1 - f2) 5 0 0 25 50 75 100 125 Case Temperature (°C) 150 175 Pin [S.C.L.] (dBm) Typical Power Data (VDS = 10 V, IDSQ = 2200 mA) P-1dB & G-1dB vs Frequency 40 IM3 vs Output Power 13 38 P-1dB (dBm) 11 G-1dB (dB) 37 10 36 9 35 8 7.0 7.2 7.4 7.6 Frequency (GHz) 7.8 8.0 IM3 (dBc) 12 G-1dB (dB) 39 P-1dB (dBm) Typical IM3 Data (VDS = 10 V, IDSQ ≈ 65% IDSS) f1 = 7.90 GHz, f2 = 7.91 GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 IM3 (dBc) 23 24 25 26 27 28 29 30 31 32 33 34 35 Pout [S.C.L.] (dBm) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised October 2007 EIC7179-8 7.10-7.90GHz 8-Watt Internally-Matched Power FET UPDATED 08/21/2007 PACKAGES OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified EIC7179-8 (Hermetic) Excelics EIC7179-8NH (Non-Hermetic) Excelics .024 EIC7179-8 .827±.010 .669 EIC7179-8NH .421 .120 MIN .120 MIN YYWW YYWW SN SN .004 .125 .063 .508±.008 .442 .168±.010 .004 .105±.008 ALL DIMENSIONS IN INCHES ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. Caution! ESD sensitive device. ORDERING INFORMATION Part Number Packages Grade1 fTest (GHz) P1dB (min) IM3 (min)2 EIC7179-8 Hermetic Industrial 7.10-7.90GHz 38.5 -43 EIC7179-8NH Non-Hermetic Industrial 7.10-7.90GHz 38.5 -43 Notes: 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in “Electrical Characteristics” table. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revised October 2007