CY62137CV25/30/33 MoBL® CY62137CV MoBL® 2M (128K x 16) Static RAM Life™ (MoBL®) in portable applications such as cellular telephones. The devices also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). Features • Very high speed: 55 ns and 70 ns • Temperature Ranges — Industrial: –40°C to +85°C — Automotive: –40°C to +125°C • Pin-compatible with the CY62137V • Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A16). — Typical active current: 5.5 mA @ f = fmax (70-ns speed) • Low and ultra-low standby power • Easy memory expansion with CE and OE features • Automatic power-down when deselected • CMOS for optimum speed/power • Offered in a lead-free and non-lead-free 48-ball FBGA packages Functional Description[1] The CY62137CV25/30/33 and CY62137CV are high-performance CMOS static RAMs organized as 128K words by 16 bits. These devices feature advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes. Logic Block Diagram DATA IN DRIVERS A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 SENSE AMPS ROW DECODER 10 128K x 16 RAM Array 2048 x 1024 I/O0–I/O7 I/O8–I/O15 BHE WE CE OE BLE A12 A13 A14 A15 A16 A11 COLUMN DECODER CE Power-down Circuit BHE BLE Note: 1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05201 Rev. *F • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised January 6, 2006 CY62137CV25/30/33 MoBL® CY62137CV MoBL® Pin Configuration[2, 3] 48-ball FBGA Pinout Top View 1 2 3 4 5 6 BLE OE A0 A1 A2 NC A I/O8 BHE A3 A4 CE I/O0 B I/O9 I/O10 A5 A6 I/O1 I/O2 C VSS I/O11 NC A7 I/O3 VCC D VCC I/O12 DNU A16 I/O4 VSS E I/O14 I/O13 A14 A15 I/O5 I/O6 F I/O15 NC A12 A13 WE I/O7 G NC A8 A9 A10 A11 NC H Product Portfolio Power Dissipation Operating, ICC (mA) VCC Range (V) Product Range f = 1 MHz Standby, ISB2 (µA) f = fmax Min. Typ.[4] Max. Speed (ns) Typ.[4] Max. Typ.[4] Max. Typ.[4] Max. 55 1.5 3 7 15 2 10 70 1.5 3 5.5 12 55 1.5 3 7 15 2 10 CY62137CV25LL Industrial 2.2 2.5 2.7 CY62137CV30LL Industrial 2.7 3.0 3.3 70 1.5 3 5.5 12 CY62137CV30LL Automotive 2.7 3.0 3.3 70 1.5 3 5.5 15 2 15 CY62137CV33LL Industrial 3.0 3.3 3.6 55 1.5 3 7 15 5 15 70 1.5 3 5.5 12 CY62137CVLL Industrial 2.7V 3.3 3.6 70 1.5 3 5.5 12 5 15 CY62137CVSL Industrial 2.7V 3.3 3.6 70 1.5 3 5.5 12 1 5 Notes: 2. NC pins are not connected to the die. 3. E3 (DNU) can be left as NC or tied to VSS to ensure proper application. 4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25°C. Document #: 38-05201 Rev. *F Page 2 of 13 CY62137CV25/30/33 MoBL® CY62137CV MoBL® Maximum Ratings Static Discharge Voltage.......................................... > 2001V (per MIL-STD-883, Method 3015) (Above which the useful life may be impaired. For user guidelines, not tested.) Latch-up Current.................................................... > 200 mA Storage Temperature ................................. –65°C to +150°C Operating Range Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage to Ground Potential –0.5V to VCCMAX + 0.5V Device Range CY62137CV25 Industrial Ambient Temperature TA VCC –40°C to +85°C 2.2V to 2.7V DC Voltage Applied to Outputs in High-Z State[5] ....................................–0.5V to VCC + 0.3V CY62137CV30 2.7V to 3.3V CY62137CV33 3.0V to 3.6V DC Input Voltage[5] .................................... −0.5V to VCC + 0.3V CY62137CV 2.7V to 3.6V Output Current into Outputs (LOW) .............................20 mA CY62137CV30 Automotive –40°C to +125°C 2.7V to 3.3V Electrical Characteristics Over the Operating Range CY62137CV25-55 Parameter Description Test Conditions VOH Output HIGH Voltage IOH = –0.1 mA VCC = 2.2V VOL Output LOW Voltage IOL = 0.1 mA VCC = 2.2V VIH Input HIGH Voltage VIL Input LOW Voltage IIX Input Leakage Current GND < VI < VCC IOZ Output Leakage Current GND < VO < VCC, Output Disabled ICC VCC Operating Supply Current f = fMAX = 1/tRC ISB1 Automatic CE Power-down Current— CMOS Inputs CE > VCC – 0.2V VIN > VCC – 0.2V or VIN < 0.2V, f = fmax (Address and Data Only), f=0 (OE, WE, BHE, and BLE) ISB2 Automatic CE Power-down Current— CMOS Inputs CE > VCC – 0.2V VIN > VCC – 0.2V or VIN < 0.2V, f = 0, VCC = 2.7V f = 1 MHz VCC = 2.7V IOUT = 0 mA CMOS Levels Min. Typ.[4] Max. 2.0 CY62137CV25-70 Min. Typ.[4] Max. 2.0 Unit V 0.4 0.4 V V 1.8 VCC + 0.3 1.8 VCC + 0.3 –0.3 0.6 –0.3 0.6 V –1 +1 –1 +1 µA –1 +1 –1 +1 µA mA 7 15 5.5 12 1.5 3 1.5 3 2 10 2 10 µA Note: 5. VIL(min.) = –2.0V for pulse durations less than 20 ns. Document #: 38-05201 Rev. *F Page 3 of 13 CY62137CV25/30/33 MoBL® CY62137CV MoBL® Electrical Characteristics Over the Operating Range CY62137CV30-55 Parameter Description Test Conditions Min. Typ. VOH Output HIGH Voltage VOL Output LOW Voltage IOL = 2.1 mA VIH Input HIGH Voltage VIL Input LOW Voltage IIX Input Leakage Current GND < VI < VCC Output Leakage Current GND < VO < VCC, Output Disabled VCC Operating Supply Current f = fMAX = 1/tRC VCC = 3.3V Ind’l IOUT = 0mA Auto CMOS f = 1 MHz Ind’l Levels Auto IOZ ICC ISB1 ISB2 IOH = –1.0 mA VCC = 2.7V [4] Max. 2.4 VCC = 2.7V Ind’l Ind’l VOH –0.3 0.8 –0.3 0.8 V –1 +1 –1 +1 µA –2 +2 –1 +1 –2 +2 –1 +1 7 15 15 1.5 3 10 2 10 2 15 2 10 2 15 CE > VCC – 0.2V VIN > VCC – 0.2V or VIN < 0.2V f = 0, VCC = 3.3V Ind’l 2 IOL = 2.1 mA 12 5.5 3 Automatic CE Power-down Current— CMOS Inputs Output LOW Voltage 5.5 1.5 10 Auto Min. Typ.[4] Max. 2.4 VCC = 2.7V VOL V VCC + 0.3 2 VCC = 3.0V V 2.2 Ind’l CE > VCC – 0.2V VIN > VCC – 0.2V or VIN < 0.2V, f = fmax (Address and Data Auto Only), f=0 (OE, WE, BHE and BLE) IOH = –1.0 mA 0.4 VCC + 0.3 Automatic CE Power-down Current— CMOS Inputs Output HIGH Voltage Unit 2.2 Auto Test Conditions Max. V 0.4 Auto Description Min. Typ.[4] 2.4 CY62137CV33-55 Parameter CY62137CV30-70 VCC = 3.0V µA mA µA CY62137CV33-70 CY62137CV-70 Min. Typ.[4] Max. Unit 2.4 V 2.4 V 0.4 VCC = 2.7V 0.4 V 0.4 V VIH Input HIGH Voltage 2.2 VCC + 0.3 2.2 VCC + 0.3 V VIL Input LOW Voltage –0.3 0.8 –0.3 0.8 V IIX Input Leakage Current –1 +1 –1 +1 µA IOZ Output Leakage Current GND < VO < VCC, Output Disabled –1 +1 –1 +1 µA ICC VCC Operating Supply Current f = fMAX = 1/tRC VCC = 3.6V IOUT = 0 mA f = 1 MHz CMOS Levels mA ISB1 Automatic CE Power-down Current —CMOS Inputs ISB2 Automatic CE Power-down Current —CMOS Inputs Document #: 38-05201 Rev. *F GND < VI < VCC 7 15 5.5 12 1.5 3 1.5 3 CE > VCC – 0.2V VIN > VCC – 0.2V or VIN < 0.2V, f = fmax (Address and Data Only), f=0 (OE, WE, BHE, and BLE) 5 15 5 15 LL CE > VCC – 0.2V VIN > VCC – 0.2V or SL VIN < 0.2V, f = 0, VCC = 3.6V 5 15 5 15 1 5 µA Page 4 of 13 CY62137CV25/30/33 MoBL® CY62137CV MoBL® Capacitance[6] Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions Max. Unit 6 pF 8 pF TA = 25°C, f = 1 MHz, VCC = VCC(typ.) Thermal Resistance Parameter Description ΘJA Thermal Resistance (Junction to Ambient)[6] ΘJC Thermal Resistance (Junction to Case)[6] Test Conditions Still Air, soldered on a 3 x 4.5 inch, two-layer printed circuit board FBGA Package Unit 55 °C/W 16 °C/W AC Test Loads and Waveforms R1 VCC ALL INPUT PULSES VCC Typ OUTPUT 10% R2 30 pF INCLUDING JIG AND SCOPE 90% 10% 90% GND Rise TIme: 1 V/ns Fall Time: 1 V/ns Equivalent to: THÉVENIN EQUIVALENT RTH OUTPUT Parameters R1 R2 RTH VTH 2.5V 16600 15400 8000 1.20 VTH 3.0V 1105 1550 645 1.75 3.3V 1216 1374 645 1.75 Unit Ω Ω Ω V Data Retention Characteristics (Over the Operating Range) Parameter Description VDR VCC for Data Retention ICCDR Data Retention Current Conditions Min. Typ.[4] 1.5 VCC= 1.5V LL CE > VCC – 0.2V, VIN > VCC – 0.2V or VIN < 0.2V SL tCDR[6] Chip Deselect to Data Retention Time tR[7] Operation Recovery Time Ind’l 1 Max. Unit Vccmax V 6 Auto 8 Ind’l 4 µA 0 ns tRC ns Data Retention Waveform[8] DATA RETENTION MODE VCC VCC(min.) tCDR VDR > 1.5 V VCC(min.) tR CE or BHE.BLE Notes: 6. Tested initially and after any design or process changes that may affect these parameters. 7. Full-device AC operation requires linear VCC ramp from VDR to VCC(min.) > 100 µs or stable at VCC(min.) > 100 µs. 8. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE. Document #: 38-05201 Rev. *F Page 5 of 13 CY62137CV25/30/33 MoBL® CY62137CV MoBL® Switching Characteristics Over the Operating Range[9] 55 ns Parameter Description Min 70 ns Max Min Max Unit Read Cycle tRC Read Cycle Time 55 tAA Address to Data Valid tOHA Data Hold from Address Change tACE CE LOW to Data Valid 55 70 ns tDOE OE LOW to Data Valid 25 35 ns [10] tLZOE OE LOW to Low-Z 10 [10] CE LOW to Low-Z tHZCE CE HIGH to High-Z[10, 12] tPU CE LOW to Power-up tPD CE HIGH to Power-down tDBE BHE/BLE LOW to Data Valid tLZBE[11] BHE/BLE LOW to Low-Z[10] tHZBE BHE/BLE HIGH to 70 10 ns 25 10 20 0 0 55 5 ns ns 70 ns 70 ns 5 20 ns ns 25 55 ns ns 5 20 High-Z[10, 12] ns 10 5 OE HIGH to High-Z tLZCE Write 55 [10, 12] tHZOE 70 ns 25 ns Cycle[13] tWC Write Cycle Time 55 70 ns tSCE CE LOW to Write End 45 60 ns tAW Address Set-up to Write End 45 60 ns tHA Address Hold from Write End 0 0 ns tSA Address Set-up to Write Start 0 0 ns tPWE WE Pulse Width 40 45 ns tBW BHE/BLE Pulse Width 50 60 ns tSD Data Set-up to Write End 25 30 ns tHD Data Hold from Write End 0 tHZWE WE LOW to High-Z[10, 12] tLZWE [10] WE HIGH to Low-Z 0 20 10 ns 25 10 ns ns Notes: 9. Test conditions assume signal transition time of 5 ns or less, timing reference levels of VCC(typ.)/2, input pulse levels of 0 to VCC(typ.), and output loading of the specified IOL/IOH and 30-pF load capacitance. 10. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 11. If both byte enables are toggled together this value is 10 ns. 12. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedance state. 13. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the write. Document #: 38-05201 Rev. *F Page 6 of 13 CY62137CV25/30/33 MoBL® CY62137CV MoBL® Switching Waveforms Read Cycle No. 1 (Address Transition Controlled)[14, 15] tRC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled)[15, 16] ADDRESS tRC CE tPD tHZCE tACE OE BHE/BLE ttLZOE LZOE tHZOE tDOE tHZBE tLZBE DATA OUT tDBE HIGH IMPEDANCE HIGH IMPEDANCE DATA VALID tLZCE VCC SUPPLY CURRENT tPU ICC 50% 50% ISB Notes: 14. Device is continuously selected. OE, CE = VIL, BHE, BLE = VIL. 15. WE is HIGH for read cycle. 16. Address valid prior to or coincident with CE, BHE, BLE transition LOW. Document #: 38-05201 Rev. *F Page 7 of 13 CY62137CV25/30/33 MoBL® CY62137CV MoBL® Switching Waveforms (continued) Write Cycle No. 1 (WE Controlled)[13, 17, 18] tWC ADDRESS tSCE CE tAW tHA tSA tPWE WE tBW BHE/BLE OE tSD DATA I/O tHD DATAIN VALID NOTE 19 tHZOE Write Cycle No. 2 (CE Controlled)[13, 17, 18] tWC ADDRESS tSCE CE tSA tAW tHA tPWE WE tBW BHE/BLE OE tSD DATA I/O tHD DATAIN VALID NOTE 19 tHZOE Notes: 17. Data I/O is high-impedance if OE = VIH. 18. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. 19. During this period, the I/Os are in output state and input signals should not be applied. Document #: 38-05201 Rev. *F Page 8 of 13 CY62137CV25/30/33 MoBL® CY62137CV MoBL® Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW)[18] . tWC ADDRESS tSCE CE tBW BHE/BLE tAW tHA tSA tPWE WE tSD DATAI/O NOTE 19 tHD DATAIN VALID tLZWE tHZWE Write Cycle No. 4 (BHE/BLE Controlled, OE LOW)[18] tWC ADDRESS CE tSCE tAW tHA tBW BHE/BLE tSA tPWE WE tSD DATA I/O NOTE 19 Document #: 38-05201 Rev. *F tHD DATAIN VALID Page 9 of 13 CY62137CV25/30/33 MoBL® CY62137CV MoBL® Truth Table CE WE OE BHE BLE Inputs/Outputs Mode Power H X X X X High-Z Deselect/Power-down Standby (ISB) X X X H H High-Z Deselect/Power-down Standby (ISB) L H L L L Data Out (I/OO–I/O15) Read Active (ICC) L H L H L Data Out (I/OO–I/O7); I/O8–I/O15 in High-Z Read Active (ICC) L H L L H Data Out (I/O8–I/O15); I/O0–I/O7 in High-Z Read Active (ICC) L H H L L High-Z Output Disabled Active (ICC) L H H H L High-Z Output Disabled Active (ICC) L H H L H High-Z Output Disabled Active (ICC) L L X L L Data In (I/OO–I/O15) Write Active (ICC) L L X H L Data In (I/OO–I/O7); I/O8–I/O15 in High-Z Write Active (ICC) L L X L H Data In (I/O8–I/O15); I/O0–I/O7 in High-Z Write Active (ICC) Ordering Information Speed (ns) 70 Ordering Code CY62137CV30LL-70BAI Voltage Range (V) 2.7–3.3 CY62137CV30LL-70BVI 2.7–3.3 Automotive 48-ball FBGA (6 x 8 x 1 mm) (Pb-free) 2.7–3.3 CY62137CV30LL-55BVI 51-85096 48-ball FBGA (7 x 7 x 1.2 mm) Industrial 51-85150 48-ball FBGA (6 x 8 x 1 mm) CY62137CV30LL-55BVXI CY62137CV33LL-55BVI 51-85096 48-ball FBGA (7 x 7 x 1.2 mm) 51-85150 48-ball FBGA (6 x 8 x 1 mm) CY62137CV30LL-70BVXE CY62137CV33LL-55BAI 51-85150 48-ball FBGA (6 x 8 x 1 mm) 48-ball FBGA (7 x 7 x 1.2 mm) (Pb-free) CY62137CV30LL-70BVE CY62137CV30LL-55BAI 51-85096 48-ball FBGA (7 x 7 x 1.2 mm) 51-85096 48-ball FBGA (7 x 7 x 1.2 mm) CY62137CVSL-70BAXI 55 Industrial 51-85150 48-ball FBGA (6 x 8 x 1 mm) 2.7–3.6 CY62137CVSL-70BAI CY62137CV30LL-70BAE 51-85096 48-ball FBGA (7 x 7 x 1.2 mm) Operating Range 48-ball FBGA (6 x 8 x 1 mm) (Pb-free) 3.0–3.6 CY62137CV33LL-70BVI CY62137CVSL-70BVI Package Type 51-85150 48-ball FBGA (6 x 8 x 1 mm) CY62137CV30LL-70BVXI CY62137CV33LL-70BAI Package Diagram 48-ball FBGA (6 x 8 x 1 mm) (Pb-free) 3.0–3.6 51-85096 48-ball FBGA (7 x 7 x 1.2 mm) 51-85150 48-ball FBGA (6 x 8 x 1 mm) Please contact your local Cypress sales representative for availability of other parts. Document #: 38-05201 Rev. *F Page 10 of 13 CY62137CV25/30/33 MoBL® CY62137CV MoBL® Package Diagrams 48-ball FBGA (7 x 7 x 1.2 mm) (51-85096) BOTTOM VIEW TOP VIEW PIN 1 CORNER Ø0.05 M C PIN 1 CORNER (LASER MARK) Ø0.25 M C A B Ø0.30±0.05(48X) 1 2 3 4 5 6 6 4 3 2 1 C F G D E F 2.625 E 0.75 C 5.25 B 7.00±0.10 A B D 7.00±0.10 5 A G H H A A 1.875 0.75 B 7.00±0.10 3.75 7.00±0.10 0.10 C 0.21±0.05 0.53±0.05 0.25 C B 0.15(4X) 51-85096-*F 0.36 SEATING PLANE C Document #: 38-05201 Rev. *F 1.20 MAX. Page 11 of 13 CY62137CV25/30/33 MoBL® CY62137CV MoBL® Package Diagrams (continued) 48-ball FBGA (6 x 8 x 1 mm) (51-85150) BOTTOM VIEW TOP VIEW A1 CORNER Ø0.05 M C Ø0.25 M C A B A1 CORNER Ø0.30±0.05(48X) 2 3 4 5 6 6 5 4 3 2 1 C C E F G D E 2.625 D 0.75 A B 5.25 A B 8.00±0.10 8.00±0.10 1 F G H H A 1.875 A B 0.75 6.00±0.10 3.75 6.00±0.10 0.10 C 0.21±0.05 0.25 C 0.55 MAX. B 0.15(4X) 51-85150-*D C 1.00 MAX 0.26 MAX. SEATING PLANE MoBL is a registered trademark and More Battery Life is a trademark of Cypress Semiconductor Corporation. All product and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05201 Rev. *F Page 12 of 13 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY62137CV25/30/33 MoBL® CY62137CV MoBL® Document History Page Document Title: CY62137CV25/30/33 MoBL® and CY62137CV MoBL® 2M (128K x 16) Static RAM Document Number: 38-05201 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 112393 02/19/02 GAV New Data Sheet (advance information) *A 114015 04/25/02 JUI Added BV package diagram Changed from Advance Information to Preliminary *B 117064 07/12/02 MGN Changed from Preliminary to Final *C 118122 09/10/02 MGN Added new part number: CY62137CV with wider voltage (2.7V – 3.6V). Added new SL power bin for new part number. For TAA = 55 ns, improved tPWE min. from 45 ns to 40 ns. For TAA = 70 ns, improved tPWE min. from 50 ns to 45 ns. For TAA = 70 ns, improved tLZWE min. from 5 ns to 10 ns. *D 118761 09/23/02 MGN Improved Typ. ICC spec to 7 mA (for 55 ns) and 5.5 mA (for 70 ns). Improved Max ICC spec to 15 mA (for 55 ns) and 12 mA (for 70 ns). For TAA = 55 ns, improved tLZWE min. from 5 ns to 10 ns. Changed upper spec. for Supply Voltage to Ground Potential to VCCMAX + 0.5V. Changed upper spec. for DC Voltage Applied to Outputs in High-Z State and DC Input Voltage to VCC + 0.3V. *E 343877 See ECN PCI Added Automotive Information in Operating Range, DC and Ordering Information Table *F 419237 See ECN ZSD Changed the address of Cypress Semiconductor Corporation on Page #1 from “3901 North First Street” to “198 Champion Court” Updated the ordering information table and replaced the Package name column with Package diagram. Document #: 38-05201 Rev. *F Page 13 of 13