BLF4G22-130; BLF4G22LS-130 UHF power LDMOS transistor Rev. 01 — 3 July 2007 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Tcase = 25 °C in a common source class-AB test circuit. Mode of operation 2-carrier W-CDMA[1] [1] f VDS PL(AV) (MHz) (V) (W) f1 = 2135; f2 = 2145 28 33 ηD IMD3 ACPR (dB) (%) (dBc) (dBc) 13.5 26 −37 −41 Gp 10 MHz carrier spacing PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1 - 64 DPCH. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical 2-carrier W-CDMA performance at a supply voltage of 28 V and an IDq of 1150 mA: u Average output power = 33 W u Power gain = 13.8 dB u Efficiency = 26 % u ACPR = −41 dBc u IMD3 = −37 dBc n Easy power control n Integrated ESD protection n Excellent ruggedness (> 10 : 1 VSWR at 130 W (CW)) n High efficiency n High peak power capability (> 190 W) n Excellent thermal stability n Designed for broadband operation (2000 MHz to 2200 MHz) n Internally matched for ease of use BLF4G22-130; BLF4G22LS-130 NXP Semiconductors UHF power LDMOS transistor 1.3 Applications n RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range. 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol BLF4G22-130 (SOT502A) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 BLF4G22LS-130 (SOT502B) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange 3. Ordering information Table 3. Ordering information Type number BLF4G22-130 Package Name Description Version - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A earless flanged LDMOST ceramic package; 2 leads SOT502B BLF4G22LS-130 - 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage −0.5 +15 V ID drain current - 15 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C BLF4G22-130_4G22LS-130_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 July 2007 2 of 13 BLF4G22-130; BLF4G22LS-130 NXP Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 5: Thermal characteristics Symbol Parameter Conditions Rth(j-case) thermal resistance from Tcase = 80 °C; junction to case PL = 33 W Type Typ Max Unit BLF4G22-130 0.56 0.65 K/W BLF4G22LS-130 0.50 0.59 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.1 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 230 mA 2.5 3.1 3.5 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 µA IDSX drain cut-off current VGS = VGS(th) + 6 V; VDS = 10 V 35 44 - A IGSS gate leakage current VGS = +15 V; VDS = 0 V - - 420 nA gfs forward transconductance VDS = 10 V; ID = 12.8 A - 11 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 6 V; ID = 7.7 A - 0.07 - Ω Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - 3.4 - pF 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA, PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1-64 DPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 33 W 12.5 13.5 - dB RLin input return loss PL(AV) = 33 W −9 −15 - dB ηD drain efficiency PL(AV) = 33 W 24 26 - % IMD3 third order intermodulation distortion PL(AV) = 33 W - −37 −34 dBc ACPR adjacent channel power ratio PL(AV) = 33 W - −41 −39 dBc 7.1 Ruggedness in class-AB operation The BLF4G22-130 and the BLF4G22LS-130 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1150 mA; PL = 130 W (CW). BLF4G22-130_4G22LS-130_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 July 2007 3 of 13 BLF4G22-130; BLF4G22LS-130 NXP Semiconductors UHF power LDMOS transistor 001aag620 40 IMD3 ACPR (dBc) ηD (%) Gp (dB) 30 001aag621 −15 40 30 −25 20 −35 10 −45 0 −55 ηD 20 IMD3 Gp ACPR 10 0 0 10 20 30 40 50 PL(AV) (W) 0 VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; f = 1990 MHz. 10 20 30 40 50 PL(AV) (W) VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; f = 1990 MHz. Fig 1. 2-Carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values Fig 2. 2-Carrier W-CDMA IMD3 and ACPR as functions of average load power; typical values Table 8. Typical impedance VDS = 28 V; IDq = 1150 mA; PL(AV) = 33 W; Tcase = 25 °C. f ZS ZL MHz Ω Ω 2110 1.9 − j2.8 1.7 − j1.8 2140 1.8 − j2.7 1.6 − j1.6 2170 1.7 − j2.6 1.5 − j1.4 BLF4G22-130_4G22LS-130_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 July 2007 4 of 13 BLF4G22-130; BLF4G22LS-130 NXP Semiconductors UHF power LDMOS transistor 001aag622 16 IMD3 (dBc) (5) Gp (dB) 001aag623 −20 (4) −30 (3) (2) 14 (5) −40 (1) (4) (3) (2) −50 (1) 12 −60 10 1 10 102 103 −70 1 102 10 PL(PEP) (W) (1) IDq = 850 mA (1) IDq = 850 mA (2) IDq = 975 mA (2) IDq = 975 mA (3) IDq = 1150 mA (3) IDq = 1150 mA (4) IDq = 1350 mA (4) IDq = 1350 mA (5) IDq = 1550 mA (5) IDq = 1550 mA VDS = 28 V; f1 = 2140.0 MHz; f2 = 2140.1 MHz. VDS = 28 V; f1 = 2140.0 MHz; f2 = 2140.1 MHz. Fig 3. Two-tone power gain as a function of peak envelope load power; typical values 001aag624 15 103 PL(PEP) (W) Fig 4. Third order intermodulation distortion as a function of peak envelope load power; typical values 001aag625 1011 t50% × IDS2 (h × A2) Gp (dB) 1010 (1) 13 109 (2) 108 11 107 106 9 0 80 160 240 80 120 160 200 240 Tj (°C) PL (W) ton = 8 µs; toff = 1 ms. (1) PL(1dB) = 174 W (= 52.4 dBm) (2) PL(3db) = 209 W (= 53.2 dBm) Fig 5. Pulsed peak power capability; typical values Fig 6. Time in hours to 50 % cumulative failure (t50%) due to electromigration as function of junction temperature BLF4G22-130_4G22LS-130_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 July 2007 5 of 13 xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x C12 VGG C13 VDD R1 C11 C2 NXP Semiconductors 8. Test information BLF4G22-130_4G22LS-130_1 Product data sheet C1 C14 C4 C3 L7 L14 C15 C8 C9 C10 C5 L6 DUT C7 L1 L10 L2 L3 C16 L11 L13 L12 L4 L5 L8 L9 See Table 9 for list of components. 6 of 13 © NXP B.V. 2007. All rights reserved. Fig 7. Schematic test circuit for operation at 2.14 GHz UHF power LDMOS transistor 001aac275 BLF4G22-130; BLF4G22LS-130 Rev. 01 — 3 July 2007 C6 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NXP Semiconductors BLF4G22-130_4G22LS-130_1 Product data sheet 50 mm C13 C1 VGG R1 C12 C11 C2 C3 C4 C14 C15 L7 L14 C5 C8 C9 C10 75 mm Rev. 01 — 3 July 2007 L6 C16 C7 L1 L2 L3 L10 L4 L5 L11 L12 L13 L8 L9 The components are situated on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (εr = 3.5); thickness = 0.76 mm. The other side is unetched and serves as a ground plane. See Table 9 for list of components. 7 of 13 © NXP B.V. 2007. All rights reserved. Fig 8. Component layout for 2.14 GHz test circuit UHF power LDMOS transistor 001aac276 BLF4G22-130; BLF4G22LS-130 C6 NXP Semiconductors BLF4G22-130; BLF4G22LS-130 UHF power LDMOS transistor Table 9. List of components (see Figure 7 and Figure 8) Component Description Value C1, C2, C11 tantalum capacitor 10 µF; 35 V C3 multilayer ceramic chip capacitor 4.7 µF; 25 V C4, C10 multilayer ceramic chip capacitor 8.2 pF C5, C8, C14, C15 multilayer ceramic chip capacitor 1.5 µF; 50 V C6 multilayer ceramic chip capacitor 0.6 pF [1] C7 multilayer ceramic chip capacitor 4.7 pF [2] C9 multilayer ceramic chip capacitor 220 nF; 50 V C12 electrolytic capacitor 220 µF; 63 V C13 tantalum capacitor 4.7 µF; 50 V C16 multilayer ceramic chip capacitor 7.5 pF [1] ATC180R L1 stripline Z0 = 50 Ω [3] (W × L) 32.3 mm × 1.7 mm stripline Z0 = 50 Ω [3] (W × L) 2.2 mm × 1.7 mm stripline Z0 = 24 Ω [3] (W × L) 2.3 mm × 4.8 mm L4 stripline Z0 = 15 Ω [3] (W × L) 2.4 mm × 8 mm L5 stripline Z0 = 9.5 Ω [3] (W × L) 9.3 mm × 14 mm stripline Z0 = 60 Ω [3] (W × L) 4 mm × 1.2 mm stripline Z0 = 60 Ω [3] (W × L) 14.5 mm × 1.2 mm L8 stripline Z0 = 8.2 Ω [3] (W × L) 9.3 mm × 16.8 mm L9 stripline Z0 = 5.5 Ω [3] (W × L) 3 mm × 25.8 mm stripline Z0 = 50 Ω [3] (W × L) 11 mm × 1.7 mm stripline Z0 = 50 Ω [3] (W × L) 9.5 mm × 1.7 mm L12 stripline Z0 = 34 Ω [3] (W × L) 3 mm × 3 mm L13 stripline Z0 = 50 Ω [3] (W × L) 12.7 mm × 1.7 mm L14 stripline Z0 = 43 Ω [3] (W × L) 13.5 mm × 2.1 mm R1 SMD resistor 4.7 Ω; 0.1 W L2 L3 L6 L7 L10 L11 Remarks [2] [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. [3] Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (εr = 3.5); thickness = 0.76 mm. BLF4G22-130_4G22LS-130_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 July 2007 8 of 13 BLF4G22-130; BLF4G22LS-130 NXP Semiconductors UHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 9. Package outline SOT502A BLF4G22-130_4G22LS-130_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 July 2007 9 of 13 BLF4G22-130; BLF4G22LS-130 NXP Semiconductors UHF power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 10. Package outline SOT502B BLF4G22-130_4G22LS-130_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 July 2007 10 of 13 BLF4G22-130; BLF4G22LS-130 NXP Semiconductors UHF power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description 3GPP Third Generation Partnership Project ACPR Adjacent Channel Power Ratio CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel EDGE Enhanced Data rates for GSM Evolution EVM Error Vector Magnitude GSM Global System for Mobile communications LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio RF Radio Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF4G22-130_4G22LS-130_1 20070703 Product data sheet - - BLF4G22-130_4G22LS-130_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 July 2007 11 of 13 NXP Semiconductors BLF4G22-130; BLF4G22LS-130 UHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BLF4G22-130_4G22LS-130_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 July 2007 12 of 13 NXP Semiconductors BLF4G22-130; BLF4G22LS-130 UHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 July 2007 Document identifier: BLF4G22-130_4G22LS-130_1