i,, Una, TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal BLW33 area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties. The transistor has a 1/4" capstan envelope with ceramic cap. QUICK REFERENCE DATA MODE OF OPERATION MHz VCE V Ic mA Th °C dim<1> dB 860 860 25 25 300 300 70 25 -60 -60 'vision class-A; linear amplifier Po sync (1) *' Gp dB W > 1,0 typ. > 10,0 1,15 typ. 10,5 Note 1. Three-tone test method (vision carrier-8 dB, sound carrier-7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level. PIN CONFIGURATION PINNING-SOT122A. PIN Top View DESCRIPTION 1 collector 2 emitter 3 4 emitter base MBK1S7 Fig.1 Simplified outline. SOT122A. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors UHF linear power transistor BLW33 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 open base VCESM Emitter-base voltage (open collector) max. 50 V max. 30 V max. 4 V 1,25 A Collector current d.c. or average IG max. (peak value); f> 1 MHz ICM max. 1,9 A Total power dissipation up to Tmb = 25 °C Ptot max. 19,3 W Storage temperature Tstg Operating junction temperature T, 10 " l\f GP4 . ~ -65 to+150 "C max. 200 'C « _._ -[ (A) (1) > 1 — — Tr - "'x 70 "CV- 'y"mb T 25 11 \ \\, "" |l t - i 1 10 vCE(v, 102 (1) Sec Dnd breakdown limit (independent of temperature) Fig.2 D.C. SOAR. Fig.3 Power derating curve vs. temperature. THERMAL RESISTANCE (see Fig.4) From junction to mounting base (dissipation = 7,5 W; T mb = 74,5 °C; i.e. Th = 70 °C) From mounting base to heatsink Rthj-mb Rth mb-h 10,1 0,6 K/W KA/V UHF linear power transistor BLW33 PACKAGE OUTLINE SOT122A Studded ceramic package; 4 leads ceramic r+_ Q BeO ^1+- t ^ _.. -i I±iT U -c tI* / / metal rn 1 -c 7 I »L--|Q w^HjlA W —" \ / N3 "T" i detaillT: 10mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A 597 i 5.85 4.74 5.58 OUTLINE VERSION SOT122A D2 0.18 ! 750 6.48 I 014 622 723 H 724 L M 27.56 9.91 25.78 9-14 6.93 318 2.66 REFERENCES |EC JEDEC BAJ N 166 1182 13911.04 w , 3.86 292 338 274 8-32 UNC W1 n Qno u'°° ' EUROPEAN PROJECTION 97-04-18