Dynex DCR1576SY42 Phase control thyristor Datasheet

DCR1576SY
DCR1576SY
Phase Control Thyristor
Advance Information
Replaces January 2000 version, DS4355-4.0
DS4355-5.0 July 2001
FEATURES
KEY PARAMETERS
■ Double Side Cooling
VDRM
5200V
■ High Surge Capability
IT(AV)
2162A
ITSM
40000A
dVdt*
1000V/µs
dI/dt
300A/µs
■ High Mean Current
■ Fatigue Free
APPLICATIONS
*Higher dV/dt selections available
■ High Power Drives
■ High Voltage Power Supplies
■ DC Motor Control
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
VDRM VRRM
V
5200
DCR1576SY52
5000
DCR1576SY50
4800
DCR1576SY48
4600
DCR1576SY46
4400
DCR1576SY44
4200
DCR1576SY42
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 500mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
Respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
Outline type code: Y
See Package Details for further information.
(The DCR1576 is also available in a thin package, type code V.
Please contact Customer Services for more information).
Fig. 1 Package outline
For example:
DCR1575SY36
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DCR1576SY
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise
Symbol
Parameter
Conditions
Max.
Units
2162
A
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
3396
A
Continuous (direct) on-state current
-
3200
A
1440
A
IT
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
2261
A
Continuous (direct) on-state current
-
1984
A
Conditions
Max.
Units
1720
A
IT
Half wave resistive load
CURRENT RATINGS
Tcase = 80˚C unless stated otherwise
Symbol
Parameter
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
2700
A
Continuous (direct) on-state current
-
2500
A
1120
A
IT
Half wave resistive load
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1760
A
Continuous (direct) on-state current
-
1510
A
IT
Half wave resistive load
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DCR1576SY
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
Surge (non-repetitive) on-state current
Conditions
Max.
Units
10ms half sine; Tcase = 125oC
32.0
kA
VR = 50% VRRM - 1/4 sine
5.12 x 106
A2s
10ms half sine; Tcase = 125oC
40.0
kA
VR = 0
8.0 x 106
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Min.
Max.
dc
-
0.0095
o
Anode dc
-
0.019
o
Cathode dc
-
0.019
o
C/W
Double side
-
0.002
o
C/W
Single side
-
0.004
o
C/W
On-state (conducting)
-
135
o
Reverse (blocking)
-
125
o
Storage temperature range
–55
150
o
Clamping force
45.0
55.0
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Units
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 50.0kN
with mounting compound
C
Virtual junction temperature
C
C
kN
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DCR1576SY
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Typ.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
300
mA
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% VDRM Tj = 125oC.
-
1000
V/µs
-
150
A/µs
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV)
Gate source 20V, 20Ω
tr < 0.5µs.
Repetitive 50Hz
dI/dt
Non-repetitive
-
300
A/µs
IRRM/IDRM
Threshold voltage
At Tvj = 125oC
-
1.05
V
rT
On-state slope resistance
At Tvj = 125oC
-
0.34
mΩ
tgd
Delay time
VD = 67% VDRM, Gate source 30V, 15Ω
Rise time 0.5µs, Tj = 25oC
-
2.5
µs
IL
Latching current
Tj = 25oC, VD = 5V
550
1000
mA
IH
Holding current
Tj = 25oC, Rg - k = ∞
150
300
mA
tq
Turn-off time
IT = 800A, tp = 1ms, Tj = 125˚C,
VRM = 50V, dIRR/dt = 20A/µs,
VDR = 67% VDRM, dVDR/dt = 20V/µs linear
1.0
-
ms
Max.
Units
VT(TO)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
3.0
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
300
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
0.25
V
VRGM
Peak reverse gate voltage
5
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
30
A
PGM
Peak gate power
See table, fig.4
150
W
PG(AV)
Mean gate power
10
W
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DCR1576SY
CURVES
5000
8000
Measured under pulse conditions
Tj = 125˚C
6 phase
Max.
Halfwave
d.c.
4000
Instantaneous on-state current, IT - (A)
Min.
3 phase
Mean power dissipation - (W)
6000
4000
3000
2000
2000
1000
0
0.0
1.0
2.0
3.0
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
4.0
0
0
1000
2000
Mean on-state current, IT(AV) - (A)
3000
Fig.3 Dissipation curves
VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT
Where
A = 0.6963535
B = 0.1224886
C = 3.3104885 x 10–4
D = 1.619778 x 10–4
these values are valid for Tj = 125˚C for IT 500A to 7200A
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DCR1576SY
1000
Table gives pulse power PGM in Watts
Pulse Width
Min. IRR
Max. QS
10000
Reverse recovery current, IRR - (A)
Max. IRR
Stored charge, QS - (µC)
100
Conditions:
Tj = 125˚C, VR = 1600V,
IT = 2000A
Snubber 1µF, 11 Ohms
100
Min. QS
10
1000
IT
Gate trigger voltage, VGT - (V)
100000
µs
100
200
500
1ms
10ms
Frequency Hz
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
10
2W
50W
20W
10W
5W
Tj = 125˚C
1
Up
pe
im
rL
it 9
9%
t1
imi
rL
we
Tj = -40˚C
T
=
25˚C
% j
Lo
QS
tp = 2ms
dI/dt
100
0.1
IRM
0.1
0.001
1
1.0
100
10
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.4 Stored charge
0.01
0.1
1.0
Gate trigger current, IGT - (A)
10
Fig.5 Gate characteristics
0.1
0.1000
Single side cooled
0.01
0.0100
Double side cooled
0.001
Conduction
0.01
Double
Single
sided
sided
d.c.
0.0095
0.019
half wave
0.0105
0.020
3 phase 120˚
0.0112
0.0207
6 phase 60˚
0.0139
0.1
1.0
Time - (s)
Conduction
Effective Thermal Resistance
Junction to heatsink - ˚C/W
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.0234
10
Double side cooled
0.0010
Effective thermal resistance
Junction to case - ˚C/W
0.0001
0.001
Thermal impedance Rth(j-hs) - (˚C/W)
Thermal impedance, Rth(j-c) - ˚C/W
Single side cooled
100
Fig.6 Transient thermal impedance - junction to case
0.0001
0.001
0.01
0.1
1.0
Time - (s)
Double
Sided
Single
Sided
0.0115
0.0125
0.0132
0.0159
0.0230
0.0240
0.0247
0.0274
10
100
Fig.7 Transient thermal impedance - junction to heatsink
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DCR1576SY
6.0
75
5.0
50
4.0
I2t value for fusing - (A2s x 106)
Peak half sinewave on-state current - (kA)
100
I2t
3.0
25
0
1
10
ms
1
5
10
2.0
50
Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase = 125˚C)
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DCR1576SY
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole Ø3.6 x 2.0 deep (One in each electrode)
Cathode tab
Cathode
Ø112.5 max
Ø73 nom
37.7
36.0
Ø1.5
Gate
Ø73 nom
Anode
Nominal weight: 1600g
Clamping force: 43kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outine type code: Y
(The DCR1576 is also available in a thin package, type code V. Please contact Customer Services for more information).
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DCR1576SY
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4355-5 Issue No. 5.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
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or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
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