Diotec BYP35A6 Silicon-press-fit-diodes - high temperature diode Datasheet

BYP35A05 ... BYP35A6, BYP35K05 ... BYP35K6
BYP35A05 ... BYP35A6, BYP35K05 ... BYP35K6
Silicon-Press-Fit-Diodes – High Temperature Diodes
Silizium-Einpress-Dioden – Hochtemperatur-Dioden
Version 2006-04-22
Nominal Current
Nennstrom
Ø 12.75
Ø 11
±0.1
28.5 min
Rändel 0.8
knurl 0.8
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
5
±0.2
10.7
±0.2
1.3
35 A
Ø 13±01
Dimensions - Maße [mm]
50 ... 600 V
Metal press-fit case with plastic cover
Metall-Einpressgehäuse mit Plastik-Abdeckung
Weight approx.
Gewicht ca.
10 g
Compound has classification UL94V-0
Vergussmasse nach UL94V-0 klassifiziert
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Grenzwerte
Type / Typ
Wire to / Draht an
Repetive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
Anode
Cathode
BYP35A05
BYP35K05
50
60
BYP35A1
BYP35K1
100
120
BYP35A2
BYP35K2
200
240
BYP35A3
BYP35K3
300
360
BYP35A4
BYP35K4
400
480
BYP35A6
BYP35K6
600
700
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 150°C
IFAV
35 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
130 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
360/400 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
660 A2s
Tj
TS
-50...+215°C
-50...+215°C
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
1
Max. case temperature TC = 150°C – Max. Gehäusetemperatur TC = 150°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
BYP35A05 ... BYP35A6, BYP35K05 ... BYP35K6
Characteristics
Kennwerte
Forward Voltage – Durchlass-Spannung
Tj = 25°C
IF = 35 A
VF
< 1.1 V
Leakage Current – Sperrstrom
Tj = 25°C
VR = VRRM
IR
< 100 µA
RthC
< 0.8 K/W
Thermal Resistance Junction – Case
Wärmewiderstand Sperrschicht – Gehäuse
120
3
10
[%]
[A]
100
Tj = 125°C
2
10
80
Tj = 25°C
10
60
40
1
20
IF
IFAV
0
360a-(35a-1,1v)
-1
10
0
100
TC 50
150
200
[°C]
Rated forward current versus case temperature
Zul. Richtstrom in Abh. von der Gehäusetemp.
0.4
VF
0.8
1.0
1.4
1.2
[V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
3
10
[A]
102
îF
10
1
© Diotec Semiconductor AG
2
3
10
10
[n]
10
Peak forward surge current versus number of cycles at 50 Hz
Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz
http://www.diotec.com/
2
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