AO9926B Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO9926B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. Standard Product AO9926B is Pb-free (meets ROHS & Sony 259 specifications). AO9926BL is a Green Product ordering option. AO9926B and AO9926BL are electrically identical. VDS (V) = 20V ID = 7.6 A (VGS = 10V) RDS(ON) < 23mΩ (VGS = 10V) RDS(ON) < 26mΩ (VGS = 4.5V) RDS(ON) < 34mΩ (VGS = 2.5V) RDS(ON) < 52mΩ (VGS = 1.8V) S2 G2 S1 G1 1 2 3 4 8 7 6 5 D1 D2 D2 D1 D1 G1 SOIC-8 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A ID IDM TA=70°C TA=25°C Power Dissipation Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Maximum 20 Units V ±12 V 30 2 W 1.28 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 6.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C S2 7.6 Pulsed Drain Current B A D2 RθJA RθJL Typ 48 74 35 Max 62.5 110 50 Units °C/W °C/W °C/W AO9926B Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=16V, VGS=0V 20 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Gate-Source Breakdown Voltage VDS=0V, VGS=±10V VDS=0V, IG=±250uA Gate Threshold Voltage On state drain current VDS=VGS ID=250uA VGS=4.5V, VDS=5V VGS=10V, ID=7.6A BVGSO VGS(th) ID(ON) gFS VSD IS Static Drain-Source On-Resistance Max Units V 1 5 TJ=55°C µA 100 nA V 0.8 1 V 18 25 23 30 mΩ 21 26 mΩ 27 38 24 0.7 34 52 mΩ mΩ 1 S V 3.5 A ±12 0.5 30 TJ=125°C RDS(ON) Typ VGS=4.5V, ID=7A VGS=2.5V, ID=6A VGS=1.8V, ID=2A Forward Transconductance VDS=5V, ID=7.6A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz 630 164 137 pF pF pF VGS=0V, VDS=0V, f=1MHz 1.5 Ω SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime VGS=4.5V, VDS=10V, ID=7.6A 8.8 1 3.7 nC nC nC VGS=5V, VDS=10V, RL=1.3Ω, RGEN=3Ω 5.5 14 29 10.2 ns ns ns ns 15.2 6.3 ns nC tr tD(off) tf trr Qrr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time IF=7.6A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=7.6A, dI/dt=100A/µs 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The currentand power rating is based on the≤t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 1: June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO9926B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V VGS=5V 3V 4V VGS =2V 15 ID(A) ID(A) 20 10 10 VGS =1.5V 125°C 5 25°C 0 0 0 1 2 3 4 5 0.0 VDS(Volts) 0.5 1.0 1.5 2.0 2.5 VGS(Volts) Figure 2: Transfer Characteristics Figure 1: On-Regions Characteristi cs 50 1.6 RDS(ON)(mΩ) VGS =1.8V Normalize ON-Resistance VGS=2 5V 40 VGS =2.5V 30 VGS =4.5V 20 VGS =10V 10 0 0 5 10 15 1.4 VGS=4 5V 1.2 VGS=1 8V 1.0 0.8 20 0 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 80 1E+01 ID=7.6A 70 1E+00 60 125°C 1E-01 50 40 IS(A) RDS(ON)(mΩ) VGS=10V 125°C 1E-02 1E-03 30 20 1E-04 25°C 25°C 1E-05 10 0 2 4 6 8 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD(Volts) Figure 6: Body-Diode Characteristics 1.0 AO9926B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=10V 1200 ID=7.6A Capacitance (pF) VGS(Volts) 4 3 2 1000 1 Ciss 800 600 Crss 400 Coss 200 0 0 0 2 4 6 8 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 20 40 100 TJ(Max)=150°C, TA=25°C 10µs 100µs 1ms 1 10ms DC 20 10 100m 10s 1s 0.1 0.1 TJ(Max)=150°C TA=25°C 30 Power (W) RDS(ON) limited ID (Amps) 10 15 VDS(Volts) Figure 8: Capacitance Characteristics 1 10 0 0.001 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.01 ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000