HP ABA-32563 2.5 ghz broadband silicon rfic amplifier Datasheet

Agilent ABA-32563
2.5 GHz Broadband Silicon
RFIC Amplifier
Data Sheet
Features
• Operating Frequency DC ~ 2.5 GHz
• 19 dB Gain
• VSWR < 2.0 throughout operating
frequency
• 8.4 dBm Output P1dB
Description
Agilent’s ABA-32563 is an
economical, easy-to-use, internally 50Ω matched, silicon
monolithic broadband amplifier
that offers excellent gain and
broadband response from DC to
2.5 GHz. Packaged in an ultraminiature SOT-363 package, it
requires half the board space of
a SOT-143 package.
ABA-32563 is fabricated using
Agilent’s HP25 silicon bipolar
process, which employs a doublediffused single polysilicon
process with self-aligned submicron emitter geometry. The
process is capable of simultaneous high fT and high NPN
breakdown (25 GHz fT at 6V
BVCEO). The process utilizes
industry standard device oxide
isolation technologies and
submicron aluminum multilayer
interconnect to achieve superior
performance, high uniformity,
and proven reliability.
• 3.5 dB Noise Figure
• Unconditionally Stable
• Single 3V Supply (Id = 37 mA)
• Lead-free
Pin Connections and
Package Marking
GND 1
GND 2
2Kx
At 2 GHz, the ABA-32563 offers
a small-signal gain of 19 dB,
output P1dB of 8.4 dBm and
19.5 dBm output third order
intercept point. It is suitable for
use as wideband applications.
They are designed for low cost
gain blocks in cellular applications, DBS tuners, LNB and other
wireless communication systems.
• 19.5 dBm Output IP3
Surface Mount Package
SOT-363/SC70
Input
Output
& Vcc
GND 3
Vcc
Note:
Top View. Package marking provides orientation
and identification. “x” is the date code.
Applications
• Amplifier for Cellular, Cordless,
Special Mobile Radio, PCS, ISM,
Wireless LAN, DBS, TVRO, and TV
Tuner Applications
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1B)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
Simplified Schematic
Vcc
RF
Output
& Vcc
RF
Input
Ground 2
Ground 3
Ground 1
ABA-32563 Absolute Maximum Ratings [1]
Symbol
Parameter
Units
Absolute Max.
Vcc
Device Voltage, RF output to ground (T = 25°C)
V
6
Pin
CW RF Input Power (Vcc = 3V)
dBm
15
Pdiss
Total Power Dissipation [3]
W
0.6
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Thermal Resistance[2] (Vcc = 3V)
θj-c = 124.3°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tc, is
25°C. Derate 8.1 mW/°C for Tc > 120.8°C.
Electrical Specifications
Tc = +25°C, Zo = 50 Ω, Pin = -30 dBm, Vcc = 3V, Freq = 2 GHz, unless stated otherwise.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Gp[1]
Power Gain (|S21|2 )
dB
17.5
19.0
∆Gp
Power Gain Flatness,
NF[1]
dB
1.0
3.0
Noise Figure
dB
3.5
P1dB[1]
Output Power at 1dB Gain Compression
dBm
8.4
OIP3[1]
Output Third Order Intercept Point
dBm
19.5
VSWRin[1]
VSWRout
[1]
f = 0.1 ~ 1.5 GHz
f = 0.1 ~ 2.5 GHz
Input VSWR
<1.5
Output VSWR
<1.5
Icc[1]
Device Current
mA
37
Td[1]
Group Delay
ps
140
Max.
Std Dev.
4.4
42.5
Notes:
1. Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
Cblock
1 nF
RF Outp
2Kx
RFC
33 nH
F Input
Vcc
Cblock
1 nF
Cbypass
100 pF
Figure 1. ABA-32563 Production Test Circuit.
2
Cbypass
1000 pF
ABA-32563 Typical Performance
Tc = +25°C, Zo = 50Ω, Vcc = 3V unless stated otherwise.
22
22
20
20
5
3.5V
3V
2.7V
4.5
16
18
NF (dB)
GAIN (dB)
GAIN (dB)
4
18
3.5
16
3
3.5V
3V
2.7V
14
12
0
0.5
1
+85°C
+25°C
-40°C
14
1.5
2
2.5
3
12
4
3.5
2
0
0.5
1
FREQUENCY (GHz)
1.5
2
2.5
3
3.5
0
4
0.5
P1dB (dBm)
4
3.5
13
13
11
11
9
+85°C
+25°C
-40°C
7
3
2
0.5
1
1.5
2
2.5
3
3.5
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency and
Temperature.
3
3.5V
3V
2.7V
5
4
0.5
1
2
2.5
3.5
4
+85°C
+25°C
-40°C
5
1.5
3
7
3
0
2.5
9
3
2.5
2
Figure 4. Noise Figure vs. Frequency and
Voltage.
P1dB (dBm)
4.5
1.5
FREQUENCY (GHz)
Figure 3. Gain vs. Frequency and Temperature.
5
0
1
FREQUENCY (GHz)
Figure 2. Gain vs. Frequency and Voltage.
NF (dB)
2.5
3
3.5
FREQUENCY (GHz)
Figure 6. Output Power for 1 dB Gain
Compression vs. Frequency and Voltage.
4
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
Figure 7. Output Power for 1 dB Gain
Compression vs. Frequency and Temperature.
ABA-32563 Typical Performance, continued
Tc = +25°C, Zo = 50Ω, Vcc = 3V unless stated otherwise.
32
32
3.5V
3V
2.7V
+85°C
+25°C
-40°C
28
OIP3 (dBm)
OIP3 (dBm)
28
24
20
16
24
20
16
12
12
0
0.5
1
1.5
2
2.5
3
3.5
0
4
0.5
FREQUENCY (GHz)
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
Figure 8. Output IP3 vs. Frequency and
Voltage.
Figure 9. Output IP3 vs. Frequency and
Temperature.
120
1.8
VSWR IN
VWSR OUT
+85°C
+25°C
-40°C
100
1.6
Icc (mA)
VSWR
80
1.4
60
40
1.2
20
1.0
0
0.5
1
1.5
2
2.5
3
3.5
FREQUENCY (GHz)
Figure 10. Input and Output VSWR vs.
Frequency.
4
4
0
0
1
2
3
4
5
6
VOLTAGE (V)
Figure 11. Supply Current vs. Voltage and
Temperature.
7
ABA-32563 Typical Scattering Parameters
TC = +25°C, ZO = 50Ω, VCC = 3V, unless stated otherwise
Freq
(GHz)
S11
Mag.
S11
Ang.
S21
dB
S21
Mag.
S21
Ang.
S12
Mag.
S12
Ang.
S22
Mag.
S22
Ang.
K
Factor
0.10
0.12
171.5
20.0
10.00
-5.6
0.02
2.6
0.28
-6.5
2.70
0.20
0.11
167.2
20.0
10.04
-11.0
0.02
6.0
0.27
-12.9
2.70
0.30
0.11
162.7
20.1
10.07
-16.7
0.02
9.5
0.27
-18.8
2.70
0.40
0.10
158.0
20.1
10.09
-22.5
0.02
12.8
0.27
-24.8
2.70
0.50
0.10
139.9
20.0
10.02
-28.8
0.02
15.7
0.26
-27.6
2.60
0.60
0.10
129.4
20.0
9.95
-34.7
0.02
18.6
0.26
-31.7
2.60
0.70
0.10
121.2
19.9
9.88
-40.6
0.02
21.2
0.25
-35.9
2.50
0.80
0.09
111.6
19.8
9.79
-46.4
0.02
23.5
0.25
-40.4
2.40
0.90
0.09
102.0
19.7
9.69
-52.2
0.02
25.5
0.25
-45.0
2.40
1.00
0.09
93.3
19.6
9.58
-58.1
0.02
26.9
0.24
-49.8
2.30
1.10
0.08
84.1
19.5
9.48
-63.7
0.02
28.6
0.24
-54.5
2.30
1.20
0.08
75.4
19.4
9.35
-69.5
0.02
29.6
0.23
-59.4
2.20
1.30
0.08
66.5
19.3
9.24
-75.2
0.03
30.2
0.22
-64.5
2.10
1.40
0.08
55.2
19.2
9.12
-80.8
0.03
30.9
0.22
-69.8
2.10
1.50
0.08
45.2
19.1
8.99
-86.5
0.03
31.4
0.21
-75.2
2.10
1.60
0.07
34.1
19.0
8.86
-92.3
0.03
31.8
0.20
-80.7
2.00
1.70
0.08
24.4
18.8
8.71
-98.1
0.03
31.9
0.18
-86.4
2.00
1.80
0.08
10.6
18.6
8.54
-103.6
0.03
31.7
0.17
-92.0
2.00
1.90
0.08
-2.2
18.5
8.41
-109.3
0.03
31.9
0.16
-98.5
2.00
2.00
0.08
-12.5
18.4
8.27
-115.0
0.03
31.9
0.15
-105.6
2.00
2.20
0.08
-34.6
17.9
7.87
-126.4
0.03
31.8
0.12
-120.6
2.00
2.40
0.09
-57.6
17.5
7.51
-137.5
0.04
31.9
0.10
-139.2
2.00
2.60
0.10
-77.3
17.0
7.08
-148.8
0.04
32.3
0.08
-163.9
2.00
2.80
0.12
-93.3
16.4
6.64
-159.3
0.04
32.4
0.07
167.4
2.10
3.00
0.13
-108.3
15.9
6.21
-169.6
0.04
32.4
0.07
137.7
2.10
3.20
0.15
-124.9
15.3
5.81
-179.7
0.04
32.1
0.08
115.7
2.10
3.40
0.16
-137.7
14.6
5.39
170.6
0.05
32.2
0.09
98.7
2.10
3.60
0.19
-150.1
14.0
5.04
161.4
0.05
31.5
0.10
86.3
2.10
3.80
0.20
-162.9
13.5
4.71
152.1
0.05
31.0
0.12
78.9
2.10
4.00
0.22
-175.0
12.8
4.38
142.9
0.05
30.5
0.13
71.9
2.10
4.20
0.23
175.0
12.1
4.04
134.4
0.06
30.0
0.14
65.2
2.10
4.40
0.26
166.1
11.6
3.79
126.2
0.06
28.2
0.15
59.1
2.10
4.60
0.27
155.3
11.0
3.54
117.3
0.06
26.7
0.15
55.0
2.10
4.80
0.28
145.8
10.2
3.25
108.7
0.07
25.2
0.16
50.2
2.10
5.00
0.29
138.3
9.5
2.99
101.3
0.07
23.2
0.16
45.0
2.20
5.20
0.30
131.7
8.8
2.77
94.2
0.08
20.8
0.16
40.1
2.20
5.40
0.31
126.2
8.2
2.57
87.6
0.08
18.4
0.16
35.1
2.20
5.60
0.32
120.9
7.7
2.42
81.0
0.09
15.6
0.16
30.3
2.20
5.80
0.34
115.6
7.2
2.28
74.3
0.09
12.7
0.16
25.3
2.20
6.00
0.35
110.4
6.6
2.14
67.7
0.09
9.6
0.15
23.8
2.20
5
Device Models
Refer to Agilent’s web site
www.agilent.com/view/rf
Ordering Information
Part Number
Devices per Container
Container
ABA-32563-TR1G
3000
7" reel
ABA-32563-TR2G
10000
13" reel
ABA-32563-BLKG
100
antistatic bag
Note: Only lead-free option available.
Package Dimensions
Outline 63 (SOT-363/SC-70)
Recommended PCB Pad Layout for
Agilent's SC70 6L/SOT-363 Products
0.026
HE
E
0.079
e
0.039
D
0.018
Q1
A2
Dimensions in inches.
A
c
A1
L
b
DIMENSIONS (mm)
SYMBOL
E
D
HE
A
A2
A1
Q1
e
b
c
L
6
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
MIN.
1.15
1.80
1.80
0.80
0.80
0.00
0.10
0.650 BCS
0.15
0.10
0.10
0.30
0.20
0.30
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
6. Package surface to be mirror finish.
Device Orientation
REEL
TOP VIEW
END VIEW
4 mm
8 mm
CARRIER
TAPE
USER
FEED
DIRECTION
2Kx
2Kx
2Kx
2Kx
(Package marking example orientation shown.)
COVER TAPE
Tape Dimensions and Product Orientation for Outline 63
P
P2
D
P0
E
F
W
C
D1
t1 (CARRIER TAPE THICKNESS)
Tt (COVER TAPE THICKNESS)
K0
10° MAX.
A0
DESCRIPTION
7
10° MAX.
B0
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.40 ± 0.10
2.40 ± 0.10
1.20 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.094 ± 0.004
0.094 ± 0.004
0.047 ± 0.004
0.157 ± 0.004
0.039 + 0.010
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.50 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.061 + 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 + 0.30 - 0.10
0.254 ± 0.02
0.315 + 0.012
0.0100 ± 0.0008
COVER TAPE
WIDTH
TAPE THICKNESS
C
Tt
5.40 ± 0.10
0.062 ± 0.001
0.205 + 0.004
0.0025 ± 0.0004
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
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Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
Obsoletes 5989-0756EN
December 4, 2004
5989-1969EN